FDMC86320

Fairchild/ON Semiconductor FDMC86320

Part Number:
FDMC86320
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2486190-FDMC86320
Description:
MOSFET N CH 80V 10.7A 8-MLP
ECAD Model:
Datasheet:
FDMC86320

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Specifications
Fairchild/ON Semiconductor FDMC86320 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC86320.
  • Lifecycle Status
    ACTIVE (Last Updated: 22 hours ago)
  • Factory Lead Time
    10 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerWDFN
  • Number of Pins
    8
  • Weight
    165.33333mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2010
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • JESD-30 Code
    S-PDSO-N5
  • Number of Elements
    1
  • Power Dissipation-Max
    2.3W Ta 40W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    40W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    15 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    11.7m Ω @ 10.7A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2640pF @ 40V
  • Current - Continuous Drain (Id) @ 25°C
    10.7A Ta 22A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    41nC @ 10V
  • Rise Time
    8ns
  • Drive Voltage (Max Rds On,Min Rds On)
    8V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    5 ns
  • Turn-Off Delay Time
    20 ns
  • Continuous Drain Current (ID)
    22A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    80V
  • Pulsed Drain Current-Max (IDM)
    50A
  • Avalanche Energy Rating (Eas)
    60 mJ
  • Height
    750μm
  • Length
    3.3mm
  • Width
    3.3mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDMC86320 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 60 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2640pF @ 40V.This device conducts a continuous drain current (ID) of 22A, which is the maximum continuous current transistor can conduct.Using VGS=80V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 80V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 20 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 50A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 15 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 8V 10V volts (8V 10V).

FDMC86320 Features
the avalanche energy rating (Eas) is 60 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 50A.


FDMC86320 Applications
There are a lot of ON Semiconductor
FDMC86320 applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
FDMC86320 More Descriptions
N-Channel Power Trench® MOSFET 80V, 22A, 11.7mΩ
1-Channel Single ADC Dual Slope 3sps 3 1/2Digit LED 44-Pin MQFP Tray
TAPE REEL/PT7 80v/20v NCH PowerTrench Mosfet
Trans MOSFET N-CH 80V 10.7A 8-Pin MLP T/R - Tape and Reel
MOSFET 80V N-Channel PowerTrench MOSFET
Power Field-Effect Transistor, 10.7A I(D), 80V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Product Comparison
The three parts on the right have similar specifications to FDMC86320.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    HTS Code
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Drain to Source Voltage (Vdss)
    Resistance
    Threshold Voltage
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Nominal Vgs
    REACH SVHC
    Contact Plating
    View Compare
  • FDMC86320
    FDMC86320
    ACTIVE (Last Updated: 22 hours ago)
    10 Weeks
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    165.33333mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2010
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    S-PDSO-N5
    1
    2.3W Ta 40W Tc
    Single
    ENHANCEMENT MODE
    40W
    DRAIN
    15 ns
    N-Channel
    SWITCHING
    11.7m Ω @ 10.7A, 10V
    4.5V @ 250μA
    2640pF @ 40V
    10.7A Ta 22A Tc
    41nC @ 10V
    8ns
    8V 10V
    ±20V
    5 ns
    20 ns
    22A
    20V
    80V
    50A
    60 mJ
    750μm
    3.3mm
    3.3mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMC8360LET40
    ACTIVE (Last Updated: 1 week ago)
    19 Weeks
    Surface Mount
    Surface Mount
    8-PowerWDFN
    -
    152.7mg
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Active
    1 (Unlimited)
    -
    EAR99
    Tin (Sn)
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    2.8W Ta 75W Tc
    Single
    -
    -
    -
    -
    N-Channel
    -
    2.1m Ω @ 27A, 10V
    3V @ 250μA
    5300pF @ 20V
    27A Ta 141A Tc
    80nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    141A
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    8541.29.00.95
    260
    not_compliant
    NOT SPECIFIED
    40V
    -
    -
    -
    -
    -
    -
    -
  • FDMC86102
    ACTIVE (Last Updated: 1 week ago)
    40 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    32.13mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Nickel/Palladium (Ni/Pd)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    S-PDSO-N5
    1
    2.3W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    2.3W
    DRAIN
    8 ns
    N-Channel
    SWITCHING
    24m Ω @ 7A, 10V
    4V @ 250μA
    965pF @ 50V
    7A Ta 20A Tc
    18nC @ 10V
    4ns
    6V 10V
    ±20V
    4 ns
    14 ns
    20A
    20V
    100V
    30A
    72 mJ
    950μm
    3.4mm
    3.4mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    24MOhm
    3.1V
    MO-240BA
    7A
    3.1 V
    No SVHC
    -
  • FDMC8462
    ACTIVE (Last Updated: 11 hours ago)
    43 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    32.13mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Nickel/Palladium (Ni/Pd)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    S-PDSO-N5
    1
    2W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    2W
    DRAIN
    12 ns
    N-Channel
    SWITCHING
    5.8m Ω @ 13.5A, 10V
    3V @ 250μA
    2660pF @ 20V
    14A Ta 20A Tc
    43nC @ 10V
    4ns
    4.5V 10V
    ±20V
    3 ns
    27 ns
    14A
    20V
    40V
    50A
    -
    1.05mm
    3.3mm
    3.3mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    5.8MOhm
    2V
    -
    64A
    -
    No SVHC
    Gold
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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