Fairchild/ON Semiconductor FDMC86320
- Part Number:
- FDMC86320
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2486190-FDMC86320
- Description:
- MOSFET N CH 80V 10.7A 8-MLP
- Datasheet:
- FDMC86320
Fairchild/ON Semiconductor FDMC86320 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC86320.
- Lifecycle StatusACTIVE (Last Updated: 22 hours ago)
- Factory Lead Time10 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerWDFN
- Number of Pins8
- Weight165.33333mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2010
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Terminal FinishNickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- JESD-30 CodeS-PDSO-N5
- Number of Elements1
- Power Dissipation-Max2.3W Ta 40W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation40W
- Case ConnectionDRAIN
- Turn On Delay Time15 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs11.7m Ω @ 10.7A, 10V
- Vgs(th) (Max) @ Id4.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2640pF @ 40V
- Current - Continuous Drain (Id) @ 25°C10.7A Ta 22A Tc
- Gate Charge (Qg) (Max) @ Vgs41nC @ 10V
- Rise Time8ns
- Drive Voltage (Max Rds On,Min Rds On)8V 10V
- Vgs (Max)±20V
- Fall Time (Typ)5 ns
- Turn-Off Delay Time20 ns
- Continuous Drain Current (ID)22A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage80V
- Pulsed Drain Current-Max (IDM)50A
- Avalanche Energy Rating (Eas)60 mJ
- Height750μm
- Length3.3mm
- Width3.3mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDMC86320 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 60 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2640pF @ 40V.This device conducts a continuous drain current (ID) of 22A, which is the maximum continuous current transistor can conduct.Using VGS=80V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 80V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 20 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 50A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 15 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 8V 10V volts (8V 10V).
FDMC86320 Features
the avalanche energy rating (Eas) is 60 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 50A.
FDMC86320 Applications
There are a lot of ON Semiconductor
FDMC86320 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 60 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2640pF @ 40V.This device conducts a continuous drain current (ID) of 22A, which is the maximum continuous current transistor can conduct.Using VGS=80V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 80V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 20 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 50A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 15 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 8V 10V volts (8V 10V).
FDMC86320 Features
the avalanche energy rating (Eas) is 60 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 50A.
FDMC86320 Applications
There are a lot of ON Semiconductor
FDMC86320 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
FDMC86320 More Descriptions
N-Channel Power Trench® MOSFET 80V, 22A, 11.7mΩ
1-Channel Single ADC Dual Slope 3sps 3 1/2Digit LED 44-Pin MQFP Tray
TAPE REEL/PT7 80v/20v NCH PowerTrench Mosfet
Trans MOSFET N-CH 80V 10.7A 8-Pin MLP T/R - Tape and Reel
MOSFET 80V N-Channel PowerTrench MOSFET
Power Field-Effect Transistor, 10.7A I(D), 80V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
1-Channel Single ADC Dual Slope 3sps 3 1/2Digit LED 44-Pin MQFP Tray
TAPE REEL/PT7 80v/20v NCH PowerTrench Mosfet
Trans MOSFET N-CH 80V 10.7A 8-Pin MLP T/R - Tape and Reel
MOSFET 80V N-Channel PowerTrench MOSFET
Power Field-Effect Transistor, 10.7A I(D), 80V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
The three parts on the right have similar specifications to FDMC86320.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyTerminal PositionJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)HeightLengthWidthRadiation HardeningRoHS StatusLead FreeHTS CodePeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Drain to Source Voltage (Vdss)ResistanceThreshold VoltageJEDEC-95 CodeDrain Current-Max (Abs) (ID)Nominal VgsREACH SVHCContact PlatingView Compare
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FDMC86320ACTIVE (Last Updated: 22 hours ago)10 WeeksSurface MountSurface Mount8-PowerWDFN8165.33333mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2010e4yesActive1 (Unlimited)5EAR99Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)FET General Purpose PowerMOSFET (Metal Oxide)DUALS-PDSO-N512.3W Ta 40W TcSingleENHANCEMENT MODE40WDRAIN15 nsN-ChannelSWITCHING11.7m Ω @ 10.7A, 10V4.5V @ 250μA2640pF @ 40V10.7A Ta 22A Tc41nC @ 10V8ns8V 10V±20V5 ns20 ns22A20V80V50A60 mJ750μm3.3mm3.3mmNoROHS3 CompliantLead Free-------------
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ACTIVE (Last Updated: 1 week ago)19 WeeksSurface MountSurface Mount8-PowerWDFN-152.7mg--55°C~175°C TJTape & Reel (TR)PowerTrench®-e3yesActive1 (Unlimited)-EAR99Tin (Sn)-MOSFET (Metal Oxide)---2.8W Ta 75W TcSingle----N-Channel-2.1m Ω @ 27A, 10V3V @ 250μA5300pF @ 20V27A Ta 141A Tc80nC @ 10V-4.5V 10V±20V--141A--------ROHS3 Compliant-8541.29.00.95260not_compliantNOT SPECIFIED40V-------
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ACTIVE (Last Updated: 1 week ago)40 WeeksSurface MountSurface Mount8-PowerTDFN832.13mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®-e4yesActive1 (Unlimited)5EAR99Nickel/Palladium (Ni/Pd)FET General Purpose PowerMOSFET (Metal Oxide)DUALS-PDSO-N512.3W Ta 41W TcSingleENHANCEMENT MODE2.3WDRAIN8 nsN-ChannelSWITCHING24m Ω @ 7A, 10V4V @ 250μA965pF @ 50V7A Ta 20A Tc18nC @ 10V4ns6V 10V±20V4 ns14 ns20A20V100V30A72 mJ950μm3.4mm3.4mmNoROHS3 CompliantLead Free-----24MOhm3.1VMO-240BA7A3.1 VNo SVHC-
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ACTIVE (Last Updated: 11 hours ago)43 WeeksSurface MountSurface Mount8-PowerTDFN832.13mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®-e4yesActive1 (Unlimited)5EAR99Nickel/Palladium (Ni/Pd)FET General Purpose PowerMOSFET (Metal Oxide)DUALS-PDSO-N512W Ta 41W TcSingleENHANCEMENT MODE2WDRAIN12 nsN-ChannelSWITCHING5.8m Ω @ 13.5A, 10V3V @ 250μA2660pF @ 20V14A Ta 20A Tc43nC @ 10V4ns4.5V 10V±20V3 ns27 ns14A20V40V50A-1.05mm3.3mm3.3mmNoROHS3 CompliantLead Free-----5.8MOhm2V-64A-No SVHCGold
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