Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDMC86248
FDMC86248

Fairchild/ON Semiconductor FDMC86248

Part Number:
FDMC86248
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2482028-FDMC86248
Description:
MOSFET N CH 150V 3.4A POWER33
ECAD Model:
Datasheet:
FDMC86248

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Fairchild/ON Semiconductor FDMC86248 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC86248.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 week ago)
  • Factory Lead Time
    13 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Weight
    32.13mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2010
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • JESD-30 Code
    S-PDSO-N5
  • Number of Elements
    1
  • Power Dissipation-Max
    2.3W Ta 36W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.3W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    6.9 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    90m Ω @ 3.4A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250mA
  • Input Capacitance (Ciss) (Max) @ Vds
    525pF @ 75V
  • Current - Continuous Drain (Id) @ 25°C
    3.4A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    9nC @ 10V
  • Rise Time
    1.4ns
  • Drain to Source Voltage (Vdss)
    150V
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    2.8 ns
  • Turn-Off Delay Time
    11 ns
  • Continuous Drain Current (ID)
    3.4A
  • JEDEC-95 Code
    MO-240BA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.09Ohm
  • Avalanche Energy Rating (Eas)
    37 mJ
  • Nominal Vgs
    3.2 V
  • Height
    1.05mm
  • Length
    3.3mm
  • Width
    3.3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
FDMC86248 Description
FDMC86248 is a type of N-channel MOSFET provided by ON Semiconductor based on the advanced PowerTrench? process to provide lower on-state resistance and superior switching performance. Lower RDS (on) and high efficiency can be provided based on advanced package and silicon combination. As a result, it is well suited for primary MOSFET and MV synchronous rectifiers.

FDMC86248 Features
Lower RDS (on)
Lower on-state resistance
High dv/dt capability
Superior switching performance
Available in the Power33 package

FDMC86248 Applications
Primary MOSFET
MV synchronous rectifier
FDMC86248 More Descriptions
MOSFET, N-CH, 150V, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Curre
N-Channel Power Trench® MOSFET 150V, 13A, 90mΩ
FAIRCHILD SEMICONDUCTOR FDMC86248 MOSFET Transistor, N Channel, 13 A, 150 V, 0.069 ohm, 10 V, 3.2 V
Power Field-Effect Transistor, 3.4A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
MOSFET, N-CH, 150V, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.069ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.2V; Power Dissipation Pd:36W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to 150°C
Product Comparison
The three parts on the right have similar specifications to FDMC86248.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Avalanche Energy Rating (Eas)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Threshold Voltage
    Drain to Source Breakdown Voltage
    Lead Free
    Resistance
    Additional Feature
    Drain Current-Max (Abs) (ID)
    Pulsed Drain Current-Max (IDM)
    Contact Plating
    View Compare
  • FDMC86248
    FDMC86248
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 week ago)
    13 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    32.13mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2010
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    S-PDSO-N5
    1
    2.3W Ta 36W Tc
    Single
    ENHANCEMENT MODE
    2.3W
    DRAIN
    6.9 ns
    N-Channel
    SWITCHING
    90m Ω @ 3.4A, 10V
    4V @ 250mA
    525pF @ 75V
    3.4A Ta
    9nC @ 10V
    1.4ns
    150V
    6V 10V
    ±20V
    2.8 ns
    11 ns
    3.4A
    MO-240BA
    20V
    0.09Ohm
    37 mJ
    3.2 V
    1.05mm
    3.3mm
    3.3mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMC86244
    FDMC86244
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 18 hours ago)
    12 Weeks
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    180mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2006
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    S-PDSO-N5
    1
    2.3W Ta 26W Tc
    Single
    ENHANCEMENT MODE
    26W
    DRAIN
    5.3 ns
    N-Channel
    SWITCHING
    134m Ω @ 2.8A, 10V
    4V @ 250μA
    345pF @ 75V
    2.8A Ta 9.4A Tc
    5.9nC @ 10V
    1.5ns
    -
    6V 10V
    ±20V
    2.3 ns
    9.9 ns
    9.4A
    -
    20V
    -
    -
    2.6 V
    750μm
    3.3mm
    3.3mm
    No SVHC
    No
    ROHS3 Compliant
    2.6V
    150V
    Lead Free
    -
    -
    -
    -
    -
    FDMC86248 vs FDMC86244
  • FDMC6675BZ
    FDMC6675BZ
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 5 days ago)
    23 Weeks
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    200mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2010
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    S-PDSO-N5
    1
    2.3W Ta 36W Tc
    Single
    ENHANCEMENT MODE
    2.3W
    DRAIN
    11 ns
    P-Channel
    SWITCHING
    14.4m Ω @ 9.5A, 10V
    3V @ 250μA
    2865pF @ 15V
    9.5A Ta 20A Tc
    65nC @ 10V
    10ns
    30V
    4.5V 10V
    ±25V
    26 ns
    44 ns
    9.5A
    -
    25V
    -
    -
    -
    750μm
    3.3mm
    3.3mm
    No SVHC
    No
    ROHS3 Compliant
    -1.9V
    -30V
    Lead Free
    14.4MOhm
    ULTRA-LOW RESISTANCE
    40A
    32A
    -
    FDMC86248 vs FDMC6675BZ
  • FDMC8462
    FDMC8462
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 11 hours ago)
    43 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    32.13mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Nickel/Palladium (Ni/Pd)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    S-PDSO-N5
    1
    2W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    2W
    DRAIN
    12 ns
    N-Channel
    SWITCHING
    5.8m Ω @ 13.5A, 10V
    3V @ 250μA
    2660pF @ 20V
    14A Ta 20A Tc
    43nC @ 10V
    4ns
    -
    4.5V 10V
    ±20V
    3 ns
    27 ns
    14A
    -
    20V
    -
    -
    -
    1.05mm
    3.3mm
    3.3mm
    No SVHC
    No
    ROHS3 Compliant
    2V
    40V
    Lead Free
    5.8MOhm
    -
    64A
    50A
    Gold
    FDMC86248 vs FDMC8462
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
Related parts for FDMC86248
Popular Search Part Number Related Keywords Search Tags

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.