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FDMC8622

Fairchild/ON Semiconductor FDMC8622

Part Number:
FDMC8622
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2481457-FDMC8622
Description:
MOSFET N-CH 100V 4A POWER33
ECAD Model:
Datasheet:
FDMC8622

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Specifications
Fairchild/ON Semiconductor FDMC8622 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC8622.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 week ago)
  • Factory Lead Time
    4 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerWDFN
  • Number of Pins
    8
  • Weight
    200mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    Nickel/Palladium/Gold (Ni/Pd/Au)
  • Additional Feature
    ULTRA-LOW RESISTANCE
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • JESD-30 Code
    R-PDSO-F5
  • Number of Elements
    1
  • Power Dissipation-Max
    2.5W Ta 31W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    31W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    5.9 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    56m Ω @ 4A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    402pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    4A Ta 16A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    7.3nC @ 10V
  • Rise Time
    1.6ns
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    2.2 ns
  • Turn-Off Delay Time
    10.2 ns
  • Continuous Drain Current (ID)
    16A
  • Threshold Voltage
    2.9V
  • JEDEC-95 Code
    MO-240BA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    4A
  • Drain-source On Resistance-Max
    0.056Ohm
  • Drain to Source Breakdown Voltage
    100V
  • Pulsed Drain Current-Max (IDM)
    30A
  • Avalanche Energy Rating (Eas)
    37 mJ
  • Nominal Vgs
    2.9 V
  • Height
    750μm
  • Length
    3.3mm
  • Width
    3.3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
FDMC8622   Description
 The N-channel MOSFET FDMC8622 adopts advanced Power Tritch manufacturing process and shielded grid technology. The process is optimized for RDS, switching performance and robustness.    FDMC8622   Features   Shielded Gate MOSFET Technology Max rDS(on) = 56 mΩat VGS = 10 V, ID = 4 A Max rDS(on) = 100 mΩat VGS = 6 V, ID = 3 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package 100% UIL Tested Termination is Lead-free and RoHS Compliant
FDMC8622   Applications
This product is general usage and suitable for many different applications.
FDMC8622 More Descriptions
N-Channel Shielded Gate Power Trench® MOSFET 100V, 16A, 56mΩ
Single N-Channel 100 V 98 mOhm 7.3 nC 2.3 W PowerTrench SMT Mosfet - MLP-3.3x3.3
Power Field-Effect Transistor, 4A I(D), 100V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
MOSFET, N CH, 100V, 16A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0437ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.9V; Power Dissipation Pd:31W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.
Product Comparison
The three parts on the right have similar specifications to FDMC8622.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    HTS Code
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Drain to Source Voltage (Vdss)
    Resistance
    Lead Free
    Contact Plating
    View Compare
  • FDMC8622
    FDMC8622
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 week ago)
    4 Weeks
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    200mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    ULTRA-LOW RESISTANCE
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    R-PDSO-F5
    1
    2.5W Ta 31W Tc
    Single
    ENHANCEMENT MODE
    31W
    DRAIN
    5.9 ns
    N-Channel
    SWITCHING
    56m Ω @ 4A, 10V
    4V @ 250μA
    402pF @ 50V
    4A Ta 16A Tc
    7.3nC @ 10V
    1.6ns
    6V 10V
    ±20V
    2.2 ns
    10.2 ns
    16A
    2.9V
    MO-240BA
    20V
    4A
    0.056Ohm
    100V
    30A
    37 mJ
    2.9 V
    750μm
    3.3mm
    3.3mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMC8360LET40
    FDMC8360LET40
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 week ago)
    19 Weeks
    Surface Mount
    Surface Mount
    8-PowerWDFN
    -
    152.7mg
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Active
    1 (Unlimited)
    -
    EAR99
    Tin (Sn)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    2.8W Ta 75W Tc
    Single
    -
    -
    -
    -
    N-Channel
    -
    2.1m Ω @ 27A, 10V
    3V @ 250μA
    5300pF @ 20V
    27A Ta 141A Tc
    80nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    141A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    8541.29.00.95
    260
    not_compliant
    NOT SPECIFIED
    40V
    -
    -
    -
    FDMC8622 vs FDMC8360LET40
  • FDMC86102
    FDMC86102
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 week ago)
    40 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    32.13mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Nickel/Palladium (Ni/Pd)
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    -
    S-PDSO-N5
    1
    2.3W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    2.3W
    DRAIN
    8 ns
    N-Channel
    SWITCHING
    24m Ω @ 7A, 10V
    4V @ 250μA
    965pF @ 50V
    7A Ta 20A Tc
    18nC @ 10V
    4ns
    6V 10V
    ±20V
    4 ns
    14 ns
    20A
    3.1V
    MO-240BA
    20V
    7A
    -
    100V
    30A
    72 mJ
    3.1 V
    950μm
    3.4mm
    3.4mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    24MOhm
    Lead Free
    -
    FDMC8622 vs FDMC86102
  • FDMC8462
    FDMC8462
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 11 hours ago)
    43 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    32.13mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Nickel/Palladium (Ni/Pd)
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    -
    S-PDSO-N5
    1
    2W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    2W
    DRAIN
    12 ns
    N-Channel
    SWITCHING
    5.8m Ω @ 13.5A, 10V
    3V @ 250μA
    2660pF @ 20V
    14A Ta 20A Tc
    43nC @ 10V
    4ns
    4.5V 10V
    ±20V
    3 ns
    27 ns
    14A
    2V
    -
    20V
    64A
    -
    40V
    50A
    -
    -
    1.05mm
    3.3mm
    3.3mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    5.8MOhm
    Lead Free
    Gold
    FDMC8622 vs FDMC8462
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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