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FDMC86102LZ

Fairchild/ON Semiconductor FDMC86102LZ

Part Number:
FDMC86102LZ
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3554184-FDMC86102LZ
Description:
MOSFET N-CH 100V 7A 8MLP
ECAD Model:
Datasheet:
FDMC86102LZ

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Specifications
Fairchild/ON Semiconductor FDMC86102LZ technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC86102LZ.
  • Lifecycle Status
    ACTIVE (Last Updated: 14 hours ago)
  • Factory Lead Time
    6 Weeks
  • Contact Plating
    Gold, Silver
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerWDFN
  • Number of Pins
    8
  • Weight
    165.33333mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2017
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Resistance
    24MOhm
  • Terminal Finish
    Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
  • Additional Feature
    LOGIC LEVEL COMPATIBLE
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    S-PDSO-N5
  • Number of Elements
    1
  • Power Dissipation-Max
    2.3W Ta 41W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    41W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    7.1 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    24m Ω @ 6.5A, 10V
  • Vgs(th) (Max) @ Id
    2.2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1290pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    7A Ta 18A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    22nC @ 10V
  • Rise Time
    2.3ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    2.5 ns
  • Turn-Off Delay Time
    19 ns
  • Continuous Drain Current (ID)
    7A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    7A
  • Drain to Source Breakdown Voltage
    100V
  • Pulsed Drain Current-Max (IDM)
    30A
  • Nominal Vgs
    1.6 V
  • Height
    750μm
  • Length
    3.3mm
  • Width
    3.3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDMC86102LZ Description
This N-Channel logic Level MOSFET is made with the sophisticated PowerTrench? process, which includes Shielded Gate technology. The on-state resistance of this technique has been improved while maintaining exceptional switching performance. To improve the ESD voltage level, a G-S zener has been installed.

FDMC86102LZ Features
Shielded Gate MOSFET Technology
Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 6.5 A
Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 5.5 A
HBM ESD protection level > 6 KV typical (Note 4)
100% UIL Tested
RoHS Compliant

FDMC86102LZ Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
FDMC86102LZ More Descriptions
N-Channel Shielded Gate Power Trench® MOSFET 100V, 22A, 24mΩ
Power MOSFET, N Channel, 100 V, 22 A, 24 Milliohms, Power 33, 8 Pins, Surface Mount
MOSFET, N CH, 100V, 22A, POWER 33-8; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:41W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:-; SVHC:No SVHC (20-Jun-2013)
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.
Product Comparison
The three parts on the right have similar specifications to FDMC86102LZ.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Form
    Number of Channels
    Drain to Source Voltage (Vdss)
    JEDEC-95 Code
    DS Breakdown Voltage-Min
    Threshold Voltage
    View Compare
  • FDMC86102LZ
    FDMC86102LZ
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 14 hours ago)
    6 Weeks
    Gold, Silver
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    165.33333mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2017
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    24MOhm
    Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
    LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    260
    30
    S-PDSO-N5
    1
    2.3W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    41W
    DRAIN
    7.1 ns
    N-Channel
    SWITCHING
    24m Ω @ 6.5A, 10V
    2.2V @ 250μA
    1290pF @ 50V
    7A Ta 18A Tc
    22nC @ 10V
    2.3ns
    4.5V 10V
    ±20V
    2.5 ns
    19 ns
    7A
    20V
    7A
    100V
    30A
    1.6 V
    750μm
    3.3mm
    3.3mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • FDMC612PZ
    FDMC612PZ
    Fairchild/ON Semiconductor
    CONSULT SALES OFFICE (Last Updated: 1 week ago)
    -
    -
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    180mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2017
    e4
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    -
    Nickel/Palladium/Gold (Ni/Pd/Au)
    -
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    NOT SPECIFIED
    NOT SPECIFIED
    S-PDSO-N5
    1
    2.3W Ta 26W Tc
    Single
    ENHANCEMENT MODE
    2.3W
    DRAIN
    26 ns
    P-Channel
    SWITCHING
    8.4m Ω @ 14A, 4.5V
    1.5V @ 250μA
    7995pF @ 10V
    14A Ta
    74nC @ 4.5V
    52ns
    2.5V 4.5V
    ±12V
    81 ns
    96 ns
    14A
    12V
    40A
    -
    50A
    -
    750μm
    3.3mm
    3.3mm
    -
    -
    RoHS Compliant
    -
    NO LEAD
    1
    20V
    MO-240BA
    20V
    -
    FDMC86102LZ vs FDMC612PZ
  • FDMC86244
    FDMC86244
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 18 hours ago)
    12 Weeks
    -
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    180mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2006
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    -
    Nickel/Palladium/Gold (Ni/Pd/Au)
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    -
    -
    S-PDSO-N5
    1
    2.3W Ta 26W Tc
    Single
    ENHANCEMENT MODE
    26W
    DRAIN
    5.3 ns
    N-Channel
    SWITCHING
    134m Ω @ 2.8A, 10V
    4V @ 250μA
    345pF @ 75V
    2.8A Ta 9.4A Tc
    5.9nC @ 10V
    1.5ns
    6V 10V
    ±20V
    2.3 ns
    9.9 ns
    9.4A
    20V
    -
    150V
    -
    2.6 V
    750μm
    3.3mm
    3.3mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    2.6V
    FDMC86102LZ vs FDMC86244
  • FDMC6675BZ
    FDMC6675BZ
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 5 days ago)
    23 Weeks
    -
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    200mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2010
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    14.4MOhm
    Nickel/Palladium/Gold (Ni/Pd/Au)
    ULTRA-LOW RESISTANCE
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    -
    -
    S-PDSO-N5
    1
    2.3W Ta 36W Tc
    Single
    ENHANCEMENT MODE
    2.3W
    DRAIN
    11 ns
    P-Channel
    SWITCHING
    14.4m Ω @ 9.5A, 10V
    3V @ 250μA
    2865pF @ 15V
    9.5A Ta 20A Tc
    65nC @ 10V
    10ns
    4.5V 10V
    ±25V
    26 ns
    44 ns
    9.5A
    25V
    40A
    -30V
    32A
    -
    750μm
    3.3mm
    3.3mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    30V
    -
    -
    -1.9V
    FDMC86102LZ vs FDMC6675BZ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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