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FDMC86102L

Fairchild/ON Semiconductor FDMC86102L

Part Number:
FDMC86102L
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2478162-FDMC86102L
Description:
MOSFET N-CH 100V 7A POWER33
ECAD Model:
Datasheet:
FDMC86102L

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Specifications
Fairchild/ON Semiconductor FDMC86102L technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC86102L.
  • Lifecycle Status
    ACTIVE (Last Updated: 13 hours ago)
  • Factory Lead Time
    13 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerWDFN
  • Number of Pins
    8
  • Weight
    165.33333mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2010
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Resistance
    24MOhm
  • Terminal Finish
    Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • JESD-30 Code
    S-PDSO-N5
  • Number of Elements
    1
  • Power Dissipation-Max
    2.3W Ta 41W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    41W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    7.7 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    23m Ω @ 7A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1330pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    7A Ta 18A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    22nC @ 10V
  • Rise Time
    2.2ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    2.4 ns
  • Turn-Off Delay Time
    19 ns
  • Continuous Drain Current (ID)
    18A
  • Threshold Voltage
    1.8V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    7A
  • Drain to Source Breakdown Voltage
    100V
  • Pulsed Drain Current-Max (IDM)
    30A
  • Avalanche Energy Rating (Eas)
    63 mJ
  • Height
    750μm
  • Length
    3.3mm
  • Width
    3.3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDMC86102L Description
FDMC86102L is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 100V. This N-Channel MOSFET is produced using an advanced PowerTrench? process that incorporates Shielded Gate Technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.

FDMC86102L Features
Shielded Gate MOSFET Technology
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A
Max rDS(on) = 34 mΩ at VGS = 4.5 V, ID = 5.5 A
Low Profile - 1 mm max in Power 33
RoHS Compliant

FDMC86102L Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
FDMC86102L More Descriptions
N-Channel Shielded Gate PowerTrench® MOSFET 100V , 18A, 23mΩ
Transistor, N-channel, shielded gate PowerTrench MOSFET, 100V, 7A, MLP8EP | ON Semiconductor FDMC86102L
MOSFET, N CH, 100V, 0.0189OHM, 18A, MLP-8; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0189ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that incorporates Shielded Gate Technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Product Comparison
The three parts on the right have similar specifications to FDMC86102L.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    JEDEC-95 Code
    Drain-source On Resistance-Max
    Nominal Vgs
    Contact Plating
    View Compare
  • FDMC86102L
    FDMC86102L
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 13 hours ago)
    13 Weeks
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    165.33333mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2010
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    24MOhm
    Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    S-PDSO-N5
    1
    2.3W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    41W
    DRAIN
    7.7 ns
    N-Channel
    SWITCHING
    23m Ω @ 7A, 10V
    3V @ 250μA
    1330pF @ 50V
    7A Ta 18A Tc
    22nC @ 10V
    2.2ns
    4.5V 10V
    ±20V
    2.4 ns
    19 ns
    18A
    1.8V
    20V
    7A
    100V
    30A
    63 mJ
    750μm
    3.3mm
    3.3mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMC7660
    FDMC7660
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 6 days ago)
    10 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    32.13mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2009
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    -
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    S-PDSO-N5
    1
    2.3W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    2.3W
    DRAIN
    14 ns
    N-Channel
    SWITCHING
    2.2m Ω @ 20A, 10V
    2.5V @ 250μA
    4830pF @ 15V
    20A Ta 40A Tc
    86nC @ 10V
    6.8ns
    4.5V 10V
    ±20V
    5.7 ns
    36 ns
    20A
    1.7V
    20V
    -
    30V
    200A
    200 mJ
    1.05mm
    3.3mm
    3.3mm
    No SVHC
    -
    ROHS3 Compliant
    Lead Free
    NO LEAD
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    Not Qualified
    MO-240BA
    0.0022Ohm
    1.7 V
    -
    FDMC86102L vs FDMC7660
  • FDMC86244
    FDMC86244
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 18 hours ago)
    12 Weeks
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    180mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2006
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    -
    Nickel/Palladium/Gold (Ni/Pd/Au)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    S-PDSO-N5
    1
    2.3W Ta 26W Tc
    Single
    ENHANCEMENT MODE
    26W
    DRAIN
    5.3 ns
    N-Channel
    SWITCHING
    134m Ω @ 2.8A, 10V
    4V @ 250μA
    345pF @ 75V
    2.8A Ta 9.4A Tc
    5.9nC @ 10V
    1.5ns
    6V 10V
    ±20V
    2.3 ns
    9.9 ns
    9.4A
    2.6V
    20V
    -
    150V
    -
    -
    750μm
    3.3mm
    3.3mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    2.6 V
    -
    FDMC86102L vs FDMC86244
  • FDMC8462
    FDMC8462
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 11 hours ago)
    43 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    32.13mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    5.8MOhm
    Nickel/Palladium (Ni/Pd)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    S-PDSO-N5
    1
    2W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    2W
    DRAIN
    12 ns
    N-Channel
    SWITCHING
    5.8m Ω @ 13.5A, 10V
    3V @ 250μA
    2660pF @ 20V
    14A Ta 20A Tc
    43nC @ 10V
    4ns
    4.5V 10V
    ±20V
    3 ns
    27 ns
    14A
    2V
    20V
    64A
    40V
    50A
    -
    1.05mm
    3.3mm
    3.3mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    Gold
    FDMC86102L vs FDMC8462
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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