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FDMC86012

Fairchild/ON Semiconductor FDMC86012

Part Number:
FDMC86012
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2484428-FDMC86012
Description:
MOSFET N-CH 30V 23A 8MLP
ECAD Model:
Datasheet:
FDMC86012

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Specifications
Fairchild/ON Semiconductor FDMC86012 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC86012.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 week ago)
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerWDFN
  • Number of Pins
    8
  • Weight
    152.7mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • JESD-30 Code
    S-PDSO-N5
  • Number of Elements
    1
  • Power Dissipation-Max
    2.3W Ta 54W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    54W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    20 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    2.7m Ω @ 23A, 4.5V
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    5075pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    23A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    38nC @ 4.5V
  • Rise Time
    11ns
  • Drive Voltage (Max Rds On,Min Rds On)
    2.5V 4.5V
  • Vgs (Max)
    ±12V
  • Fall Time (Typ)
    8 ns
  • Turn-Off Delay Time
    43 ns
  • Continuous Drain Current (ID)
    23A
  • JEDEC-95 Code
    MO-240BA
  • Gate to Source Voltage (Vgs)
    12V
  • Drain-source On Resistance-Max
    0.0027Ohm
  • Drain to Source Breakdown Voltage
    30V
  • Pulsed Drain Current-Max (IDM)
    230A
  • Avalanche Energy Rating (Eas)
    337 mJ
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
FDMC86012 Description This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low RDS(on) has been maintained to provide a sub-logic-level device.
FDMC86012 Features Max rDS(on) = 2.7 m? at VGS = 4.5 V, ID = 23 A Max rDS(on) = 4.7 m? at VGS = 2.5 V, ID = 17.5 A High-performance technology for extremely low RDS(on) Termination is Lead-free 100% UIL Tested RoHS Compliant
FDMC86012 Applications 3.3 V input synchronous buck switch Synchronous rectifier
FDMC86012 More Descriptions
Power MOSFET, N Channel, 30 V, 88 A, 2.7 Milliohms, Power 33, 8 Pins, Surface Mount
N-Channel Power Trench® MOSFET 30V, 88A, 2.7mΩ
Power Field-Effect Transistor, 23A I(D), 30V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
This device has been designed specifically to improve the efficiency of DC-DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low rDS(on) has been maintained to provide a sub logic-level device.
Product Comparison
The three parts on the right have similar specifications to FDMC86012.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Technology
    Terminal Position
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Radiation Hardening
    RoHS Status
    Published
    JESD-609 Code
    Terminal Finish
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Number of Channels
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    DS Breakdown Voltage-Min
    Height
    Length
    Width
    Reach Compliance Code
    Qualification Status
    Threshold Voltage
    Nominal Vgs
    REACH SVHC
    Lead Free
    Contact Plating
    Resistance
    View Compare
  • FDMC86012
    FDMC86012
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 week ago)
    12 Weeks
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    152.7mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    S-PDSO-N5
    1
    2.3W Ta 54W Tc
    Single
    ENHANCEMENT MODE
    54W
    DRAIN
    20 ns
    N-Channel
    SWITCHING
    2.7m Ω @ 23A, 4.5V
    1.5V @ 250μA
    5075pF @ 15V
    23A Ta
    38nC @ 4.5V
    11ns
    2.5V 4.5V
    ±12V
    8 ns
    43 ns
    23A
    MO-240BA
    12V
    0.0027Ohm
    30V
    230A
    337 mJ
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMC612PZ
    FDMC612PZ
    Fairchild/ON Semiconductor
    CONSULT SALES OFFICE (Last Updated: 1 week ago)
    -
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    180mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    S-PDSO-N5
    1
    2.3W Ta 26W Tc
    Single
    ENHANCEMENT MODE
    2.3W
    DRAIN
    26 ns
    P-Channel
    SWITCHING
    8.4m Ω @ 14A, 4.5V
    1.5V @ 250μA
    7995pF @ 10V
    14A Ta
    74nC @ 4.5V
    52ns
    2.5V 4.5V
    ±12V
    81 ns
    96 ns
    14A
    MO-240BA
    12V
    -
    -
    50A
    -
    -
    RoHS Compliant
    2017
    e4
    Nickel/Palladium/Gold (Ni/Pd/Au)
    NO LEAD
    NOT SPECIFIED
    NOT SPECIFIED
    1
    20V
    40A
    20V
    750μm
    3.3mm
    3.3mm
    -
    -
    -
    -
    -
    -
    -
    -
    FDMC86012 vs FDMC612PZ
  • FDMC7660
    FDMC7660
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 6 days ago)
    10 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    32.13mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    S-PDSO-N5
    1
    2.3W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    2.3W
    DRAIN
    14 ns
    N-Channel
    SWITCHING
    2.2m Ω @ 20A, 10V
    2.5V @ 250μA
    4830pF @ 15V
    20A Ta 40A Tc
    86nC @ 10V
    6.8ns
    4.5V 10V
    ±20V
    5.7 ns
    36 ns
    20A
    MO-240BA
    20V
    0.0022Ohm
    30V
    200A
    200 mJ
    -
    ROHS3 Compliant
    2009
    e3
    Tin (Sn)
    NO LEAD
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    -
    1.05mm
    3.3mm
    3.3mm
    not_compliant
    Not Qualified
    1.7V
    1.7 V
    No SVHC
    Lead Free
    -
    -
    FDMC86012 vs FDMC7660
  • FDMC8462
    FDMC8462
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 11 hours ago)
    43 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    32.13mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    S-PDSO-N5
    1
    2W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    2W
    DRAIN
    12 ns
    N-Channel
    SWITCHING
    5.8m Ω @ 13.5A, 10V
    3V @ 250μA
    2660pF @ 20V
    14A Ta 20A Tc
    43nC @ 10V
    4ns
    4.5V 10V
    ±20V
    3 ns
    27 ns
    14A
    -
    20V
    -
    40V
    50A
    -
    No
    ROHS3 Compliant
    -
    e4
    Nickel/Palladium (Ni/Pd)
    -
    -
    -
    -
    -
    64A
    -
    1.05mm
    3.3mm
    3.3mm
    -
    -
    2V
    -
    No SVHC
    Lead Free
    Gold
    5.8MOhm
    FDMC86012 vs FDMC8462
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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