Fairchild/ON Semiconductor FDMC7672S
- Part Number:
- FDMC7672S
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2481704-FDMC7672S
- Description:
- MOSFET N-CH 30V 8-MLP
- Datasheet:
- FDMC7672S
Fairchild/ON Semiconductor FDMC7672S technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC7672S.
- Lifecycle StatusACTIVE (Last Updated: 6 days ago)
- Factory Lead Time23 Weeks
- Contact PlatingGold
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerWDFN
- Number of Pins8
- Weight200mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®, SyncFET™
- Published2010
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Additional FeatureULTRA-LOW RESISTANCE
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- JESD-30 CodeS-PDSO-N5
- Number of Elements1
- Power Dissipation-Max2.3W Ta 36W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation36W
- Case ConnectionDRAIN
- Turn On Delay Time11 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs6m Ω @ 14.8A, 10V
- Vgs(th) (Max) @ Id3V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds2520pF @ 15V
- Current - Continuous Drain (Id) @ 25°C14.8A Ta 18A Tc
- Gate Charge (Qg) (Max) @ Vgs42nC @ 10V
- Rise Time4ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)3 ns
- Turn-Off Delay Time26 ns
- Continuous Drain Current (ID)18A
- Threshold Voltage1.6V
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.006Ohm
- Drain to Source Breakdown Voltage30V
- Pulsed Drain Current-Max (IDM)45A
- Avalanche Energy Rating (Eas)60 mJ
- Nominal Vgs1.6 V
- Height750μm
- Length3.3mm
- Width3.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDMC7672S Description
FDMC7672S is a 30v N-Channel Power Trench? SyncFET?. The onsemi FDMC7672S is produced using an advanced Power Trench? process that has been specially tailored to minimize the on-state resistance. The FDMC7672S is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery packs.
FDMC7672S Features
Max rDS(on) = 6.1 mΩ at VGS = 10 V, ID = 14.8 A
Max rDS(on) =7.2 mΩ at VGS = 4.5 V, ID = 12.4 A
High-performance technology for extremely low rDS(on)
Termination is Lead-free and RoHS Compliant
FDMC7672S Applications
DC - DC Buck Converters
Notebook battery power management
Load switch in Notebook
Photovoltaic systems
Shunt voltage regulator and the series voltage regulator
FDMC7672S is a 30v N-Channel Power Trench? SyncFET?. The onsemi FDMC7672S is produced using an advanced Power Trench? process that has been specially tailored to minimize the on-state resistance. The FDMC7672S is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery packs.
FDMC7672S Features
Max rDS(on) = 6.1 mΩ at VGS = 10 V, ID = 14.8 A
Max rDS(on) =7.2 mΩ at VGS = 4.5 V, ID = 12.4 A
High-performance technology for extremely low rDS(on)
Termination is Lead-free and RoHS Compliant
FDMC7672S Applications
DC - DC Buck Converters
Notebook battery power management
Load switch in Notebook
Photovoltaic systems
Shunt voltage regulator and the series voltage regulator
FDMC7672S More Descriptions
FAIRCHILD SEMICONDUCTOR FDMC7672S MOSFET Transistor, N Channel, 18 A, 30 V, 0.005 ohm, 10 V, 1.6 V
MOSFET, N CH, 30V, 18A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.005ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:36W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
This FDMC7672S is produced using Fairchild Semiconductor's advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery packs.
MOSFET, N CH, 30V, 18A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.005ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:36W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
This FDMC7672S is produced using Fairchild Semiconductor's advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery packs.
The three parts on the right have similar specifications to FDMC7672S.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureSubcategoryTechnologyTerminal PositionJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ChannelsDrain to Source Voltage (Vdss)JEDEC-95 CodeDrain Current-Max (Abs) (ID)DS Breakdown Voltage-MinResistanceView Compare
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FDMC7672SACTIVE (Last Updated: 6 days ago)23 WeeksGoldSurface MountSurface Mount8-PowerWDFN8200mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®, SyncFET™2010e4yesActive1 (Unlimited)5EAR99ULTRA-LOW RESISTANCEFET General Purpose PowerMOSFET (Metal Oxide)DUALS-PDSO-N512.3W Ta 36W TcSingleENHANCEMENT MODE36WDRAIN11 nsN-ChannelSWITCHING6m Ω @ 14.8A, 10V3V @ 1mA2520pF @ 15V14.8A Ta 18A Tc42nC @ 10V4ns4.5V 10V±20V3 ns26 ns18A1.6V20V0.006Ohm30V45A60 mJ1.6 V750μm3.3mm3.3mmNo SVHCNoROHS3 CompliantLead Free-----------
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CONSULT SALES OFFICE (Last Updated: 1 week ago)--Surface MountSurface Mount8-PowerWDFN8180mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2017e4yesObsolete1 (Unlimited)5EAR99-Other TransistorsMOSFET (Metal Oxide)DUALS-PDSO-N512.3W Ta 26W TcSingleENHANCEMENT MODE2.3WDRAIN26 nsP-ChannelSWITCHING8.4m Ω @ 14A, 4.5V1.5V @ 250μA7995pF @ 10V14A Ta74nC @ 4.5V52ns2.5V 4.5V±12V81 ns96 ns14A-12V--50A--750μm3.3mm3.3mm--RoHS Compliant-Nickel/Palladium/Gold (Ni/Pd/Au)NO LEADNOT SPECIFIEDNOT SPECIFIED120VMO-240BA40A20V-
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ACTIVE (Last Updated: 18 hours ago)12 Weeks-Surface MountSurface Mount8-PowerWDFN8180mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2006e4yesActive1 (Unlimited)5EAR99-FET General Purpose PowerMOSFET (Metal Oxide)DUALS-PDSO-N512.3W Ta 26W TcSingleENHANCEMENT MODE26WDRAIN5.3 nsN-ChannelSWITCHING134m Ω @ 2.8A, 10V4V @ 250μA345pF @ 75V2.8A Ta 9.4A Tc5.9nC @ 10V1.5ns6V 10V±20V2.3 ns9.9 ns9.4A2.6V20V-150V--2.6 V750μm3.3mm3.3mmNo SVHCNoROHS3 CompliantLead FreeNickel/Palladium/Gold (Ni/Pd/Au)---------
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ACTIVE (Last Updated: 5 days ago)23 Weeks-Surface MountSurface Mount8-PowerWDFN8200mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2010e4yesActive1 (Unlimited)5EAR99ULTRA-LOW RESISTANCEOther TransistorsMOSFET (Metal Oxide)DUALS-PDSO-N512.3W Ta 36W TcSingleENHANCEMENT MODE2.3WDRAIN11 nsP-ChannelSWITCHING14.4m Ω @ 9.5A, 10V3V @ 250μA2865pF @ 15V9.5A Ta 20A Tc65nC @ 10V10ns4.5V 10V±25V26 ns44 ns9.5A-1.9V25V--30V32A--750μm3.3mm3.3mmNo SVHCNoROHS3 CompliantLead FreeNickel/Palladium/Gold (Ni/Pd/Au)----30V-40A-14.4MOhm
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