Fairchild/ON Semiconductor FDMC7672

Name: FDMC7672
Brand: Fairchild/ON Semiconductor
SKU: 2481616-FDMC7672
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDMC7672

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2481616-FDMC7672

Description:: MOSFET N-CH 30V 8-MLP

ECAD Model:

Datasheet:: FDMC7672

Specifications

Fairchild/ON Semiconductor FDMC7672 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC7672.

Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Factory Lead Time
23 Weeks
Contact Plating
Gold
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Number of Pins
8
Weight
165.33333mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®, SyncFET™
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Additional Feature
ULTRA-LOW RESISTANCE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
JESD-30 Code
S-PDSO-N5
Number of Elements
1
Power Dissipation-Max
2.3W Ta 33W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.3W
Case Connection
DRAIN
Turn On Delay Time
13 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
5.7m Ω @ 16.9A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3890pF @ 15V
Current - Continuous Drain (Id) @ 25°C
16.9A Ta 20A Tc
Gate Charge (Qg) (Max) @ Vgs
57nC @ 10V
Rise Time
6ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
5 ns
Turn-Off Delay Time
31 ns
Continuous Drain Current (ID)
20A
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.0057Ohm
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
50A
Nominal Vgs
1.9 V
Height
750μm
Length
3.3mm
Width
3.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

FDMC7672 Description
FDMC7672 is a type of N-channel PowerTrench MOSFET provided by ON Semiconductor based on the advanced Power Trench process to provide lower on-state resistance and superior switching performance. As a result, it is well suited for power management and load switching applications in notebook computers and portable battery packs.

FDMC7672 Features
Lower gate charge
Lower on-state resistance
High dv/dt capability
Superior switching performance
Available in the MLP package

FDMC7672 Applications
DC-DC buck converters
Notebook battery power management
Load switch in Notebook

FDMC7672 More Descriptions

N-Channel Power Trench® MOSFET 30V, 16.9A, 5.7mΩ
MOSFET, N CH, 30V, 20A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0043ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:2.3W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Product Comparison

The three parts on the right have similar specifications to FDMC7672.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Additional Feature

Subcategory

Technology

Terminal Position

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Published

Terminal Finish

Threshold Voltage

Lead Free

Resistance

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Number of Channels

Max Junction Temperature (Tj)

View Compare
FDMC7672

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 6 days ago)

23 Weeks

Gold

Surface Mount

Surface Mount

8-PowerWDFN

8

165.33333mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®, SyncFET™

e4

yes

Active

1 (Unlimited)

5

EAR99

ULTRA-LOW RESISTANCE

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

S-PDSO-N5

1

2.3W Ta 33W Tc

Single

ENHANCEMENT MODE

2.3W

DRAIN

13 ns

N-Channel

SWITCHING

5.7m Ω @ 16.9A, 10V

3V @ 250μA

3890pF @ 15V

16.9A Ta 20A Tc

57nC @ 10V

6ns

4.5V 10V

±20V

5 ns

31 ns

20A

20V

0.0057Ohm

30V

50A

1.9 V

750μm

3.3mm

3.3mm

No SVHC

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDMC86244

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 18 hours ago)

12 Weeks

-

Surface Mount

Surface Mount

8-PowerWDFN

8

180mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

e4

yes

Active

1 (Unlimited)

5

EAR99

-

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

S-PDSO-N5

1

2.3W Ta 26W Tc

Single

ENHANCEMENT MODE

26W

DRAIN

5.3 ns

N-Channel

SWITCHING

134m Ω @ 2.8A, 10V

4V @ 250μA

345pF @ 75V

2.8A Ta 9.4A Tc

5.9nC @ 10V

1.5ns

6V 10V

±20V

2.3 ns

9.9 ns

9.4A

20V

-

150V

-

2.6 V

750μm

3.3mm

3.3mm

No SVHC

No

ROHS3 Compliant

2006

Nickel/Palladium/Gold (Ni/Pd/Au)

2.6V

Lead Free

-

-

-

-

-

-

-

-

-

FDMC7672 vs FDMC86244
FDMC6675BZ

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 5 days ago)

23 Weeks

-

Surface Mount

Surface Mount

8-PowerWDFN

8

200mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

e4

yes

Active

1 (Unlimited)

5

EAR99

ULTRA-LOW RESISTANCE

Other Transistors

MOSFET (Metal Oxide)

DUAL

S-PDSO-N5

1

2.3W Ta 36W Tc

Single

ENHANCEMENT MODE

2.3W

DRAIN

11 ns

P-Channel

SWITCHING

14.4m Ω @ 9.5A, 10V

3V @ 250μA

2865pF @ 15V

9.5A Ta 20A Tc

65nC @ 10V

10ns

4.5V 10V

±25V

26 ns

44 ns

9.5A

25V

-

-30V

32A

-

750μm

3.3mm

3.3mm

No SVHC

No

ROHS3 Compliant

2010

Nickel/Palladium/Gold (Ni/Pd/Au)

-1.9V

Lead Free

14.4MOhm

30V

40A

-

-

-

-

-

-

FDMC7672 vs FDMC6675BZ
FDMC8651

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

34 Weeks

-

Surface Mount

Surface Mount

8-PowerTDFN

8

32.13mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

e4

yes

Active

1 (Unlimited)

5

EAR99

-

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

S-PDSO-N5

1

2.3W Ta 41W Tc

Single

ENHANCEMENT MODE

2.3W

DRAIN

18 ns

N-Channel

SWITCHING

6.1m Ω @ 15A, 4.5V

1.5V @ 250μA

3365pF @ 15V

15A Ta 20A Tc

27.2nC @ 4.5V

9ns

2.5V 4.5V

±12V

6 ns

35 ns

15A

12V

-

30V

60A

1.1 V

1.05mm

3.3mm

3.3mm

No SVHC

-

ROHS3 Compliant

-

Nickel/Palladium (Ni/Pd)

800mV

Lead Free

6.1MOhm

-

64A

NO LEAD

NOT SPECIFIED

NOT SPECIFIED

Not Qualified

1

150°C

FDMC7672 vs FDMC8651