Fairchild/ON Semiconductor FDMC7572S
- Part Number:
- FDMC7572S
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2482131-FDMC7572S
- Description:
- MOSFET N-CH 25V 40A POWER33
- Datasheet:
- FDMC7572S
Fairchild/ON Semiconductor FDMC7572S technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC7572S.
- Lifecycle StatusACTIVE (Last Updated: 6 days ago)
- Factory Lead Time10 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Number of Pins8
- Weight32.13mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®, SyncFET™
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- JESD-30 CodeS-PDSO-N5
- Number of Elements1
- Power Dissipation-Max2.3W Ta 52W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation52W
- Case ConnectionDRAIN
- Turn On Delay Time11 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs3.15m Ω @ 22.5A, 10V
- Vgs(th) (Max) @ Id3V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds2705pF @ 13V
- Current - Continuous Drain (Id) @ 25°C22.5A Ta 40A Tc
- Gate Charge (Qg) (Max) @ Vgs44nC @ 10V
- Rise Time3.6ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)3 ns
- Turn-Off Delay Time26 ns
- Continuous Drain Current (ID)40A
- Threshold Voltage1.7V
- JEDEC-95 CodeMO-240BA
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)22.5A
- Drain to Source Breakdown Voltage25V
- Nominal Vgs1.7 V
- Height1mm
- Length3.4mm
- Width3.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDMC7572S Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2705pF @ 13V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 40A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 25V, and this device has a drainage-to-source breakdown voltage of 25VV.Drain current refers to the maximum continuous current a device can conduct, and it is 22.5A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 26 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 1.7V, which means that it will not activate any of its functions when its threshold voltage reaches 1.7V.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
FDMC7572S Features
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 26 ns
a threshold voltage of 1.7V
FDMC7572S Applications
There are a lot of ON Semiconductor
FDMC7572S applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2705pF @ 13V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 40A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 25V, and this device has a drainage-to-source breakdown voltage of 25VV.Drain current refers to the maximum continuous current a device can conduct, and it is 22.5A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 26 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 1.7V, which means that it will not activate any of its functions when its threshold voltage reaches 1.7V.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
FDMC7572S Features
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 26 ns
a threshold voltage of 1.7V
FDMC7572S Applications
There are a lot of ON Semiconductor
FDMC7572S applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
FDMC7572S More Descriptions
N-Channel 25 V 0.00315 ohm Surface Mount PowerTrench SyncFET Mosfet Power 33
Power Field-Effect Transistor, 22.5A I(D), 25V, 0.00315ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
MOSFET, N CH, 25V, 40A, POWER33; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.00215ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:52W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
The FDMC7572S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
Power Field-Effect Transistor, 22.5A I(D), 25V, 0.00315ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
MOSFET, N CH, 25V, 40A, POWER33; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.00215ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:52W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
The FDMC7572S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
The three parts on the right have similar specifications to FDMC7572S.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyTerminal PositionJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreePublishedResistanceAdditional FeatureDrain to Source Voltage (Vdss)Pulsed Drain Current-Max (IDM)Contact PlatingTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusNumber of ChannelsMax Junction Temperature (Tj)View Compare
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FDMC7572SACTIVE (Last Updated: 6 days ago)10 WeeksSurface MountSurface Mount8-PowerTDFN832.13mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®, SyncFET™e3yesActive1 (Unlimited)5EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALS-PDSO-N512.3W Ta 52W TcSingleENHANCEMENT MODE52WDRAIN11 nsN-ChannelSWITCHING3.15m Ω @ 22.5A, 10V3V @ 1mA2705pF @ 13V22.5A Ta 40A Tc44nC @ 10V3.6ns4.5V 10V±20V3 ns26 ns40A1.7VMO-240BA20V22.5A25V1.7 V1mm3.4mm3.4mmNo SVHCNoROHS3 CompliantLead Free-------------
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ACTIVE (Last Updated: 5 days ago)23 WeeksSurface MountSurface Mount8-PowerWDFN8200mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e4yesActive1 (Unlimited)5EAR99Nickel/Palladium/Gold (Ni/Pd/Au)Other TransistorsMOSFET (Metal Oxide)DUALS-PDSO-N512.3W Ta 36W TcSingleENHANCEMENT MODE2.3WDRAIN11 nsP-ChannelSWITCHING14.4m Ω @ 9.5A, 10V3V @ 250μA2865pF @ 15V9.5A Ta 20A Tc65nC @ 10V10ns4.5V 10V±25V26 ns44 ns9.5A-1.9V-25V40A-30V-750μm3.3mm3.3mmNo SVHCNoROHS3 CompliantLead Free201014.4MOhmULTRA-LOW RESISTANCE30V32A-------
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ACTIVE (Last Updated: 11 hours ago)43 WeeksSurface MountSurface Mount8-PowerTDFN832.13mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e4yesActive1 (Unlimited)5EAR99Nickel/Palladium (Ni/Pd)FET General Purpose PowerMOSFET (Metal Oxide)DUALS-PDSO-N512W Ta 41W TcSingleENHANCEMENT MODE2WDRAIN12 nsN-ChannelSWITCHING5.8m Ω @ 13.5A, 10V3V @ 250μA2660pF @ 20V14A Ta 20A Tc43nC @ 10V4ns4.5V 10V±20V3 ns27 ns14A2V-20V64A40V-1.05mm3.3mm3.3mmNo SVHCNoROHS3 CompliantLead Free-5.8MOhm--50AGold------
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ACTIVE (Last Updated: 1 day ago)34 WeeksSurface MountSurface Mount8-PowerTDFN832.13mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e4yesActive1 (Unlimited)5EAR99Nickel/Palladium (Ni/Pd)FET General Purpose PowerMOSFET (Metal Oxide)DUALS-PDSO-N512.3W Ta 41W TcSingleENHANCEMENT MODE2.3WDRAIN18 nsN-ChannelSWITCHING6.1m Ω @ 15A, 4.5V1.5V @ 250μA3365pF @ 15V15A Ta 20A Tc27.2nC @ 4.5V9ns2.5V 4.5V±12V6 ns35 ns15A800mV-12V64A30V1.1 V1.05mm3.3mm3.3mmNo SVHC-ROHS3 CompliantLead Free-6.1MOhm--60A-NO LEADNOT SPECIFIEDNOT SPECIFIEDNot Qualified1150°C
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