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FDMC6686P

Fairchild/ON Semiconductor FDMC6686P

Part Number:
FDMC6686P
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2483881-FDMC6686P
Description:
MOSFET P-CH 20V POWER33
ECAD Model:
Datasheet:
FDMC6686P

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Specifications
Fairchild/ON Semiconductor FDMC6686P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC6686P.
  • Lifecycle Status
    ACTIVE (Last Updated: 5 days ago)
  • Factory Lead Time
    10 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerWDFN
  • Number of Pins
    8
  • Weight
    26.8mg
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2004
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Power Dissipation-Max
    2.3W Ta 40W Tc
  • Element Configuration
    Single
  • FET Type
    P-Channel
  • Rds On (Max) @ Id, Vgs
    4m Ω @ 18A, 4.5V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    13200pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    18A Ta 56A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    122nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    1.8V 4.5V
  • Vgs (Max)
    ±8V
  • Continuous Drain Current (ID)
    56A
  • RoHS Status
    ROHS3 Compliant
Description
FDMC6686P Description
FDMC6686P is a P-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 20V. The operating temperature of FDMC6686P is -55°C~150°C TJ and its maximum power dissipation is  40W Tc. FDMC6686P has 8 pins and it is available in an 8-PowerWDFN packaging way. This P-Channel MOSFET is produced using an advanced PowerTrench? process that has been optimized for rDS(ON), switching performance and ruggedness.

FDMC6686P Features
Max rDS(on) = 4 mΩ at VGS = -4.5 V, ID = -18 A
Max rDS(on) = 5.7 mΩ at VGS = -2.5 V, ID = -16 A
Max rDS(on) =11.5 mΩ at VGS = -1.8 V, ID = -11 A
High-performance trench technology for extremely low rDS(on)
High power and current handling capability in a widely used surface mount package
Lead-free and RoHS Compliant

FDMC6686P Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
FDMC6686P More Descriptions
P-Channel PowerTrench® MOSFET -20V, -56A, 4mΩ
Power Field-Effect Transistor, 56A I(D), 20V, 0.004ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(ON), switching performance and ruggedness.
Mosfet, P-Ch, -20V, -56A, 40W, Power 33; Transistor Polarity:P Channel; Continuous Drain Current Id:-56A; Drain Source Voltage Vds:-20V; On Resistance Rds(On):0.0033Ohm; Rds(On) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-750Mv; Rohs Compliant: Yes |Onsemi FDMC6686P
Product Comparison
The three parts on the right have similar specifications to FDMC6686P.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Terminal Finish
    Technology
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Power Dissipation-Max
    Element Configuration
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    RoHS Status
    Transistor Element Material
    Number of Terminations
    Resistance
    Additional Feature
    Subcategory
    Terminal Position
    JESD-30 Code
    Number of Elements
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    Transistor Application
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Lead Free
    Contact Plating
    Terminal Form
    Qualification Status
    Number of Channels
    Max Junction Temperature (Tj)
    Nominal Vgs
    View Compare
  • FDMC6686P
    FDMC6686P
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 5 days ago)
    10 Weeks
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    26.8mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2004
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    MOSFET (Metal Oxide)
    260
    not_compliant
    NOT SPECIFIED
    2.3W Ta 40W Tc
    Single
    P-Channel
    4m Ω @ 18A, 4.5V
    1V @ 250μA
    13200pF @ 10V
    18A Ta 56A Tc
    122nC @ 4.5V
    20V
    1.8V 4.5V
    ±8V
    56A
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMC6675BZ
    FDMC6675BZ
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 5 days ago)
    23 Weeks
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    200mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2010
    e4
    yes
    Active
    1 (Unlimited)
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    MOSFET (Metal Oxide)
    -
    -
    -
    2.3W Ta 36W Tc
    Single
    P-Channel
    14.4m Ω @ 9.5A, 10V
    3V @ 250μA
    2865pF @ 15V
    9.5A Ta 20A Tc
    65nC @ 10V
    30V
    4.5V 10V
    ±25V
    9.5A
    ROHS3 Compliant
    SILICON
    5
    14.4MOhm
    ULTRA-LOW RESISTANCE
    Other Transistors
    DUAL
    S-PDSO-N5
    1
    ENHANCEMENT MODE
    2.3W
    DRAIN
    11 ns
    SWITCHING
    10ns
    26 ns
    44 ns
    -1.9V
    25V
    40A
    -30V
    32A
    750μm
    3.3mm
    3.3mm
    No SVHC
    No
    Lead Free
    -
    -
    -
    -
    -
    -
    FDMC6686P vs FDMC6675BZ
  • FDMC8462
    FDMC8462
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 11 hours ago)
    43 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    32.13mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e4
    yes
    Active
    1 (Unlimited)
    EAR99
    Nickel/Palladium (Ni/Pd)
    MOSFET (Metal Oxide)
    -
    -
    -
    2W Ta 41W Tc
    Single
    N-Channel
    5.8m Ω @ 13.5A, 10V
    3V @ 250μA
    2660pF @ 20V
    14A Ta 20A Tc
    43nC @ 10V
    -
    4.5V 10V
    ±20V
    14A
    ROHS3 Compliant
    SILICON
    5
    5.8MOhm
    -
    FET General Purpose Power
    DUAL
    S-PDSO-N5
    1
    ENHANCEMENT MODE
    2W
    DRAIN
    12 ns
    SWITCHING
    4ns
    3 ns
    27 ns
    2V
    20V
    64A
    40V
    50A
    1.05mm
    3.3mm
    3.3mm
    No SVHC
    No
    Lead Free
    Gold
    -
    -
    -
    -
    -
    FDMC6686P vs FDMC8462
  • FDMC8651
    FDMC8651
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    34 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    32.13mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e4
    yes
    Active
    1 (Unlimited)
    EAR99
    Nickel/Palladium (Ni/Pd)
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    -
    NOT SPECIFIED
    2.3W Ta 41W Tc
    Single
    N-Channel
    6.1m Ω @ 15A, 4.5V
    1.5V @ 250μA
    3365pF @ 15V
    15A Ta 20A Tc
    27.2nC @ 4.5V
    -
    2.5V 4.5V
    ±12V
    15A
    ROHS3 Compliant
    SILICON
    5
    6.1MOhm
    -
    FET General Purpose Power
    DUAL
    S-PDSO-N5
    1
    ENHANCEMENT MODE
    2.3W
    DRAIN
    18 ns
    SWITCHING
    9ns
    6 ns
    35 ns
    800mV
    12V
    64A
    30V
    60A
    1.05mm
    3.3mm
    3.3mm
    No SVHC
    -
    Lead Free
    -
    NO LEAD
    Not Qualified
    1
    150°C
    1.1 V
    FDMC6686P vs FDMC8651
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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