Fairchild/ON Semiconductor FDMC6679AZ

Name: FDMC6679AZ
Brand: Fairchild/ON Semiconductor
SKU: 2478311-FDMC6679AZ
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDMC6679AZ

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2478311-FDMC6679AZ

Description:: MOSFET P-CH 30V POWER33

ECAD Model:

Datasheet:: FDMC6679AZ

Specifications

Fairchild/ON Semiconductor FDMC6679AZ technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC6679AZ.

Lifecycle Status
ACTIVE (Last Updated: 5 days ago)
Factory Lead Time
23 Weeks
Contact Plating
Gold
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Number of Pins
8
Weight
165.33333mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2006
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Resistance
10MOhm
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
JESD-30 Code
S-PDSO-N5
Number of Elements
1
Power Dissipation-Max
2.3W Ta 41W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
41W
Case Connection
DRAIN
Turn On Delay Time
12 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
10m Ω @ 11.5A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3970pF @ 15V
Current - Continuous Drain (Id) @ 25°C
11.5A Ta 20A Tc
Gate Charge (Qg) (Max) @ Vgs
91nC @ 10V
Rise Time
14ns
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±25V
Fall Time (Typ)
46 ns
Turn-Off Delay Time
63 ns
Continuous Drain Current (ID)
11.5A
Threshold Voltage
-1.8V
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
-30V
Pulsed Drain Current-Max (IDM)
32A
Height
750μm
Length
3.3mm
Width
3.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDMC6679AZ Description
FDMC6679AZ is a -30v P-Channel Power Trench? MOSFET. The onsemi FDMC6679AZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor FDMC6679AZ is in the Power-33-8 package with 41W power dissipation.

FDMC6679AZ Features
Max rDS(on) = 10 mΩ at VGS = -10 V, ID = -11.5 A
Max rDS(on) = 18 mΩ at VGS = -4.5 V, ID = -8.5 A
HBM ESD protection level of 8 kV typical(note 3)
Extended VGSS range (-25 V) for battery applications
High-performance trench technology for extremely low rDS(on)
High power and current handling capability
Termination is Lead-free and RoHS Compliant

FDMC6679AZ Applications
Load Switch in Notebook
Server
Notebook Battery Pack Power Management

FDMC6679AZ More Descriptions

P-MOSFET transistor FDMC6679AZ Fairchild, -30V, -20A, 10mOhm, SMD MLP 3.3x3.3
P-Channel Power Trench® MOSFET -30V, -20A, 10mΩ
Trans MOSFET P-CH Si 30V 11.5A 8-Pin WDFN EP T/R / MOSFET P-CH 30V POWER33
The FDMC6679AZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.
MOSFET, P CH, 30V, 20A, MLP 3.3X3.3; Transistor Polarity:P Channel; Continuous Drain Current Id:-20A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0086ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.8V; Power Dissipation Pd:41W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

Product Comparison

The three parts on the right have similar specifications to FDMC6679AZ.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Technology

Terminal Position

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Terminal Finish

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Qualification Status

JEDEC-95 Code

Drain-source On Resistance-Max

Avalanche Energy Rating (Eas)

Nominal Vgs

Drain Current-Max (Abs) (ID)

Additional Feature

View Compare
FDMC6679AZ

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 5 days ago)

23 Weeks

Gold

Surface Mount

Surface Mount

8-PowerWDFN

8

165.33333mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2006

e4

yes

Active

1 (Unlimited)

5

EAR99

10MOhm

Other Transistors

MOSFET (Metal Oxide)

DUAL

S-PDSO-N5

1

2.3W Ta 41W Tc

Single

ENHANCEMENT MODE

41W

DRAIN

12 ns

P-Channel

SWITCHING

10m Ω @ 11.5A, 10V

3V @ 250μA

3970pF @ 15V

11.5A Ta 20A Tc

91nC @ 10V

14ns

30V

4.5V 10V

±25V

46 ns

63 ns

11.5A

-1.8V

25V

-30V

32A

750μm

3.3mm

3.3mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-
FDMC7660

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 6 days ago)

10 Weeks

-

Surface Mount

Surface Mount

8-PowerTDFN

8

32.13mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2009

e3

yes

Active

1 (Unlimited)

5

EAR99

-

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

S-PDSO-N5

1

2.3W Ta 41W Tc

Single

ENHANCEMENT MODE

2.3W

DRAIN

14 ns

N-Channel

SWITCHING

2.2m Ω @ 20A, 10V

2.5V @ 250μA

4830pF @ 15V

20A Ta 40A Tc

86nC @ 10V

6.8ns

-

4.5V 10V

±20V

5.7 ns

36 ns

20A

1.7V

20V

30V

200A

1.05mm

3.3mm

3.3mm

No SVHC

-

ROHS3 Compliant

Lead Free

Tin (Sn)

NO LEAD

NOT SPECIFIED

not_compliant

NOT SPECIFIED

Not Qualified

MO-240BA

0.0022Ohm

200 mJ

1.7 V

-

-

FDMC6679AZ vs FDMC7660
FDMC86102

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

40 Weeks

-

Surface Mount

Surface Mount

8-PowerTDFN

8

32.13mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

-

e4

yes

Active

1 (Unlimited)

5

EAR99

24MOhm

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

S-PDSO-N5

1

2.3W Ta 41W Tc

Single

ENHANCEMENT MODE

2.3W

DRAIN

8 ns

N-Channel

SWITCHING

24m Ω @ 7A, 10V

4V @ 250μA

965pF @ 50V

7A Ta 20A Tc

18nC @ 10V

4ns

-

6V 10V

±20V

4 ns

14 ns

20A

3.1V

20V

100V

30A

950μm

3.4mm

3.4mm

No SVHC

No

ROHS3 Compliant

Lead Free

Nickel/Palladium (Ni/Pd)

-

-

-

-

-

MO-240BA

-

72 mJ

3.1 V

7A

-

FDMC6679AZ vs FDMC86102
FDMC6675BZ

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 5 days ago)

23 Weeks

-

Surface Mount

Surface Mount

8-PowerWDFN

8

200mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2010

e4

yes

Active

1 (Unlimited)

5

EAR99

14.4MOhm

Other Transistors

MOSFET (Metal Oxide)

DUAL

S-PDSO-N5

1

2.3W Ta 36W Tc

Single

ENHANCEMENT MODE

2.3W

DRAIN

11 ns

P-Channel

SWITCHING

14.4m Ω @ 9.5A, 10V

3V @ 250μA

2865pF @ 15V

9.5A Ta 20A Tc

65nC @ 10V

10ns

30V

4.5V 10V

±25V

26 ns

44 ns

9.5A

-1.9V

25V

-30V

32A

750μm

3.3mm

3.3mm

No SVHC

No

ROHS3 Compliant

Lead Free

Nickel/Palladium/Gold (Ni/Pd/Au)

-

-

-

-

-

-

-

-

-

40A

ULTRA-LOW RESISTANCE

FDMC6679AZ vs FDMC6675BZ