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FDMC610P

Fairchild/ON Semiconductor FDMC610P

Part Number:
FDMC610P
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2480517-FDMC610P
Description:
MOSFET P-CH 12V 80A POWER33
ECAD Model:
Datasheet:
FDMC610P

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Specifications
Fairchild/ON Semiconductor FDMC610P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC610P.
  • Lifecycle Status
    ACTIVE (Last Updated: 5 days ago)
  • Factory Lead Time
    10 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Weight
    32.13mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    NO LEAD
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    S-PDSO-N5
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    2.4W Ta 48W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Turn On Delay Time
    24 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    3.9m Ω @ 22A, 4.5V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1250pF @ 6V
  • Current - Continuous Drain (Id) @ 25°C
    80A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    99nC @ 4.5V
  • Rise Time
    37ns
  • Drain to Source Voltage (Vdss)
    12V
  • Drive Voltage (Max Rds On,Min Rds On)
    2.5V 4.5V
  • Vgs (Max)
    ±8V
  • Fall Time (Typ)
    87 ns
  • Turn-Off Delay Time
    193 ns
  • Continuous Drain Current (ID)
    80A
  • JEDEC-95 Code
    MO-240BA
  • Gate to Source Voltage (Vgs)
    8V
  • Drain Current-Max (Abs) (ID)
    22A
  • Drain-source On Resistance-Max
    0.0039Ohm
  • Drain to Source Breakdown Voltage
    -12V
  • Pulsed Drain Current-Max (IDM)
    200A
  • Height
    1mm
  • Length
    3.4mm
  • Width
    3.4mm
  • RoHS Status
    ROHS3 Compliant
Description
FDMC610P Description
FDMC610P is a -12V P-Channel PowerTrench? MOSFET manufactured by onsemi. This P-Channel MOSFET FDMC610P has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. The FDMC610P has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

FDMC610P Features
Max rDS(on) = 3.9 mΩ at VGS = -4.5 V, ID = -22 A
Max rDS(on) = 6.4 mΩ at VGS = -2.5 V, ID = -16 A
State-of-the-art switching performance
Lower output capacitance, gate resistance, and gate charge boost efficiency
Shielded gate technology reduces switch node ringing and increases immunity to EMI and cross conduction
RoHS Compliant

FDMC610P Applications
High side switching for high-end computing
High power density DC-DC synchronous buck converter
FDMC610P More Descriptions
P-Channel PowerTrench MOSFET - 8LD,PQFN,DUAL,JEDEC MO-240 BA,3.3X3.3MM,SINGLE TIED DAP
P-Channel PowerTrench® MOSFET -12V. -80A, 3.9mΩ
MOSFET, P-CH, -12V, -80A, POWER 33-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-80A; Source Voltage Vds:-12V; On Resistance
Power Field-Effect Transistor, 22A I(D), 12V, 0.0039ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
This P-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Product Comparison
The three parts on the right have similar specifications to FDMC610P.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Height
    Length
    Width
    RoHS Status
    Resistance
    Power Dissipation
    Threshold Voltage
    Avalanche Energy Rating (Eas)
    Nominal Vgs
    REACH SVHC
    Radiation Hardening
    Lead Free
    Published
    Contact Plating
    View Compare
  • FDMC610P
    FDMC610P
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 5 days ago)
    10 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    32.13mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Tin (Sn)
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    S-PDSO-N5
    1
    1
    2.4W Ta 48W Tc
    Single
    ENHANCEMENT MODE
    DRAIN
    24 ns
    P-Channel
    SWITCHING
    3.9m Ω @ 22A, 4.5V
    1V @ 250μA
    1250pF @ 6V
    80A Tc
    99nC @ 4.5V
    37ns
    12V
    2.5V 4.5V
    ±8V
    87 ns
    193 ns
    80A
    MO-240BA
    8V
    22A
    0.0039Ohm
    -12V
    200A
    1mm
    3.4mm
    3.4mm
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMC86102
    FDMC86102
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 week ago)
    40 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    32.13mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Nickel/Palladium (Ni/Pd)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    -
    -
    -
    -
    S-PDSO-N5
    1
    -
    2.3W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    DRAIN
    8 ns
    N-Channel
    SWITCHING
    24m Ω @ 7A, 10V
    4V @ 250μA
    965pF @ 50V
    7A Ta 20A Tc
    18nC @ 10V
    4ns
    -
    6V 10V
    ±20V
    4 ns
    14 ns
    20A
    MO-240BA
    20V
    7A
    -
    100V
    30A
    950μm
    3.4mm
    3.4mm
    ROHS3 Compliant
    24MOhm
    2.3W
    3.1V
    72 mJ
    3.1 V
    No SVHC
    No
    Lead Free
    -
    -
    FDMC610P vs FDMC86102
  • FDMC86244
    FDMC86244
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 18 hours ago)
    12 Weeks
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    180mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    -
    -
    -
    -
    S-PDSO-N5
    1
    -
    2.3W Ta 26W Tc
    Single
    ENHANCEMENT MODE
    DRAIN
    5.3 ns
    N-Channel
    SWITCHING
    134m Ω @ 2.8A, 10V
    4V @ 250μA
    345pF @ 75V
    2.8A Ta 9.4A Tc
    5.9nC @ 10V
    1.5ns
    -
    6V 10V
    ±20V
    2.3 ns
    9.9 ns
    9.4A
    -
    20V
    -
    -
    150V
    -
    750μm
    3.3mm
    3.3mm
    ROHS3 Compliant
    -
    26W
    2.6V
    -
    2.6 V
    No SVHC
    No
    Lead Free
    2006
    -
    FDMC610P vs FDMC86244
  • FDMC8462
    FDMC8462
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 11 hours ago)
    43 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    32.13mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Nickel/Palladium (Ni/Pd)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    -
    -
    -
    -
    S-PDSO-N5
    1
    -
    2W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    DRAIN
    12 ns
    N-Channel
    SWITCHING
    5.8m Ω @ 13.5A, 10V
    3V @ 250μA
    2660pF @ 20V
    14A Ta 20A Tc
    43nC @ 10V
    4ns
    -
    4.5V 10V
    ±20V
    3 ns
    27 ns
    14A
    -
    20V
    64A
    -
    40V
    50A
    1.05mm
    3.3mm
    3.3mm
    ROHS3 Compliant
    5.8MOhm
    2W
    2V
    -
    -
    No SVHC
    No
    Lead Free
    -
    Gold
    FDMC610P vs FDMC8462
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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