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FDMC4435BZ

Fairchild/ON Semiconductor FDMC4435BZ

Part Number:
FDMC4435BZ
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2478126-FDMC4435BZ
Description:
MOSFET P-CH 30V 8.5A POWER33
ECAD Model:
Datasheet:
FDMC4435BZ

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Specifications
Fairchild/ON Semiconductor FDMC4435BZ technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC4435BZ.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    23 Weeks
  • Contact Plating
    Gold
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerWDFN
  • Number of Pins
    8
  • Weight
    200mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Resistance
    20MOhm
  • Additional Feature
    ULTRA-LOW RESISTANCE
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • JESD-30 Code
    S-PDSO-N5
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    2.3W Ta 31W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.3W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    10 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    20m Ω @ 8.5A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2045pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    8.5A Ta 18A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    46nC @ 10V
  • Rise Time
    6ns
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±25V
  • Fall Time (Typ)
    20 ns
  • Turn-Off Delay Time
    35 ns
  • Continuous Drain Current (ID)
    -8.5A
  • Threshold Voltage
    -1.9V
  • Gate to Source Voltage (Vgs)
    25V
  • Drain to Source Breakdown Voltage
    -30V
  • Pulsed Drain Current-Max (IDM)
    50A
  • Avalanche Energy Rating (Eas)
    24 mJ
  • Max Junction Temperature (Tj)
    150°C
  • Nominal Vgs
    -1.9 V
  • Height
    800μm
  • Length
    3.3mm
  • Width
    3.3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDMC4435BZ Description
The FDMC4435BZ P-Channel MOSFET is produced using ON Semiconductor's advanced Power Trench? process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

FDMC4435BZ Features 
Extended VGSS range (-25 V) for battery applications
High performance trench technology for extremely low rDS(on)
High power and current handling capability
HBM ESD protection level >7 kV typical
100% UIL Tested
Termination is Lead-free and RoHS Compliant

FDMC4435BZ Applications
High side in DC - DC Buck Converters
Notebook battery power management
Load switch in Notebook
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
FDMC4435BZ More Descriptions
PQFN 3X3,-30V,-20A,20.0m ohm,PCH POWER TRENCH MOSFET
P-Channel Power Trench® MOSFET -30V, -18A, 20mΩ
MOSFET, P CH, -30V, 0.015OHM, -18A, MLP-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-18A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.015ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.9V
This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This devie is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Product Comparison
The three parts on the right have similar specifications to FDMC4435BZ.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Max Junction Temperature (Tj)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Finish
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Published
    View Compare
  • FDMC4435BZ
    FDMC4435BZ
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    23 Weeks
    Gold
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    200mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    20MOhm
    ULTRA-LOW RESISTANCE
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    S-PDSO-N5
    1
    1
    2.3W Ta 31W Tc
    Single
    ENHANCEMENT MODE
    2.3W
    DRAIN
    10 ns
    P-Channel
    SWITCHING
    20m Ω @ 8.5A, 10V
    3V @ 250μA
    2045pF @ 15V
    8.5A Ta 18A Tc
    46nC @ 10V
    6ns
    30V
    4.5V 10V
    ±25V
    20 ns
    35 ns
    -8.5A
    -1.9V
    25V
    -30V
    50A
    24 mJ
    150°C
    -1.9 V
    800μm
    3.3mm
    3.3mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
  • FDMC86102
    FDMC86102
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 week ago)
    40 Weeks
    -
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    32.13mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    24MOhm
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    S-PDSO-N5
    1
    -
    2.3W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    2.3W
    DRAIN
    8 ns
    N-Channel
    SWITCHING
    24m Ω @ 7A, 10V
    4V @ 250μA
    965pF @ 50V
    7A Ta 20A Tc
    18nC @ 10V
    4ns
    -
    6V 10V
    ±20V
    4 ns
    14 ns
    20A
    3.1V
    20V
    100V
    30A
    72 mJ
    -
    3.1 V
    950μm
    3.4mm
    3.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    Nickel/Palladium (Ni/Pd)
    MO-240BA
    7A
    -
    FDMC4435BZ vs FDMC86102
  • FDMC86244
    FDMC86244
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 18 hours ago)
    12 Weeks
    -
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    180mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    -
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    S-PDSO-N5
    1
    -
    2.3W Ta 26W Tc
    Single
    ENHANCEMENT MODE
    26W
    DRAIN
    5.3 ns
    N-Channel
    SWITCHING
    134m Ω @ 2.8A, 10V
    4V @ 250μA
    345pF @ 75V
    2.8A Ta 9.4A Tc
    5.9nC @ 10V
    1.5ns
    -
    6V 10V
    ±20V
    2.3 ns
    9.9 ns
    9.4A
    2.6V
    20V
    150V
    -
    -
    -
    2.6 V
    750μm
    3.3mm
    3.3mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    Nickel/Palladium/Gold (Ni/Pd/Au)
    -
    -
    2006
    FDMC4435BZ vs FDMC86244
  • FDMC8462
    FDMC8462
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 11 hours ago)
    43 Weeks
    Gold
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    32.13mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    5.8MOhm
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    S-PDSO-N5
    1
    -
    2W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    2W
    DRAIN
    12 ns
    N-Channel
    SWITCHING
    5.8m Ω @ 13.5A, 10V
    3V @ 250μA
    2660pF @ 20V
    14A Ta 20A Tc
    43nC @ 10V
    4ns
    -
    4.5V 10V
    ±20V
    3 ns
    27 ns
    14A
    2V
    20V
    40V
    50A
    -
    -
    -
    1.05mm
    3.3mm
    3.3mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    Nickel/Palladium (Ni/Pd)
    -
    64A
    -
    FDMC4435BZ vs FDMC8462
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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