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CSD19536KTT

Texas Instruments CSD19536KTT

Part Number:
CSD19536KTT
Manufacturer:
Texas Instruments
Ventron No:
2486678-CSD19536KTT
Description:
100-V, N channel NexFET? power MOSFET, single D2PAK, 2.4 mOhm
ECAD Model:
Datasheet:
csd19536ktt

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Specifications
Texas Instruments CSD19536KTT technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD19536KTT.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    6 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-4, D2Pak (3 Leads Tab), TO-263AA
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    NexFET™
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    2 (1 Year)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Additional Feature
    AVALANCHE RATED
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    CSD19536
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    375W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    375W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    13 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    2.4m Ω @ 100A, 10V
  • Vgs(th) (Max) @ Id
    3.2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    12000pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    200A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    153nC @ 10V
  • Rise Time
    8ns
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    6 ns
  • Turn-Off Delay Time
    32 ns
  • Continuous Drain Current (ID)
    200A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.0028Ohm
  • Drain to Source Breakdown Voltage
    100V
  • Pulsed Drain Current-Max (IDM)
    400A
  • Avalanche Energy Rating (Eas)
    806 mJ
  • Max Junction Temperature (Tj)
    175°C
  • Height
    4.83mm
  • Length
    10.18mm
  • Width
    8.41mm
  • Thickness
    4.44mm
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Contains Lead
Description
Description
The CSD19536KTT is a NexFETTM Power MOSFET with a 100-V N-Channel. This NexFETTM power MOSFET with a 100-V, 2-m, D2PAK (TO-263) is designed to reduce losses in power conversion applications. MOSFET stands for metal oxide semiconductor field-effect transistor, and it is a form of MOSFET that is used to switch enormous amounts of current. The source and drain terminals are on opposing sides of the chip in power MOSFETs, which have a vertical configuration. The vertical design reduces gate crowding and allows for wider channel widths.

Features
? Lead-Free Terminal Plating ? RoHS Compliant ? Halogen Free ? D2PAK Plastic Package ? Ultra-Low Qg and Qgd ? Low Thermal Resistance ? Avalanche Rated

Applications
? Secondary Side Synchronous Rectifier ? Hot Swap ? Motor Control ? Power Semiconductor Device ? Automotive Industry
CSD19536KTT More Descriptions
100-V, N channel NexFET™ power MOSFET, single D2PAK, 2.4 mOhm 2-DDPAK/TO-263 -55 to 175
Trans MOSFET N-CH Si 100V 200A 4-Pin(3 Tab) DDPAK T/R
Trans MOSFET N-CH 100V 272A 3-Pin TO-263 T/R
Power Field-Effect Transistor, 200A I(D), 100V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IC STEREO AUD CODEC 18BIT 28SSOP
CSD19536KTT 100V, N CHANNEL NEXF
Product Comparison
The three parts on the right have similar specifications to CSD19536KTT.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Max Junction Temperature (Tj)
    Height
    Length
    Width
    Thickness
    RoHS Status
    Lead Free
    Surface Mount
    Terminal Position
    Drain to Source Voltage (Vdss)
    DS Breakdown Voltage-Min
    Terminal Finish
    Drain Current-Max (Abs) (ID)
    Feedback Cap-Max (Crss)
    View Compare
  • CSD19536KTT
    CSD19536KTT
    Texas Instruments
    ACTIVE (Last Updated: 1 day ago)
    6 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-263-4, D2Pak (3 Leads Tab), TO-263AA
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    NexFET™
    e3
    yes
    Active
    2 (1 Year)
    2
    EAR99
    AVALANCHE RATED
    MOSFET (Metal Oxide)
    GULL WING
    260
    not_compliant
    NOT SPECIFIED
    CSD19536
    1
    1
    375W Tc
    Single
    ENHANCEMENT MODE
    375W
    DRAIN
    13 ns
    N-Channel
    SWITCHING
    2.4m Ω @ 100A, 10V
    3.2V @ 250μA
    12000pF @ 50V
    200A Ta
    153nC @ 10V
    8ns
    6V 10V
    ±20V
    6 ns
    32 ns
    200A
    20V
    0.0028Ohm
    100V
    400A
    806 mJ
    175°C
    4.83mm
    10.18mm
    8.41mm
    4.44mm
    ROHS3 Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
  • CSD13385F5T
    CSD13385F5T
    Texas Instruments
    ACTIVE (Last Updated: 2 days ago)
    8 Weeks
    -
    -
    Surface Mount
    3-SMD, No Lead
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    -
    yes
    Active
    1 (Unlimited)
    3
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    CSD13385
    1
    -
    500mW Ta
    Single
    ENHANCEMENT MODE
    -
    -
    -
    N-Channel
    SWITCHING
    19m Ω @ 900mA, 4.5V
    1.2V @ 250μA
    674pF @ 6V
    4.3A Ta
    5nC @ 4.5V
    -
    1.8V 4.5V
    8V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    1.49mm
    730μm
    338μm
    ROHS3 Compliant
    -
    YES
    BOTTOM
    12V
    12V
    -
    -
    -
    CSD19536KTT vs CSD13385F5T
  • CSD16570Q5B
    CSD16570Q5B
    Texas Instruments
    ACTIVE (Last Updated: 1 day ago)
    12 Weeks
    Gold
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    AVALANCHE RATED
    MOSFET (Metal Oxide)
    NO LEAD
    260
    not_compliant
    NOT SPECIFIED
    CSD16570
    1
    -
    3.2W Ta 195W Tc
    Single
    ENHANCEMENT MODE
    -
    DRAIN
    5 ns
    N-Channel
    -
    0.59m Ω @ 50A, 10V
    1.9V @ 250μA
    14000pF @ 12V
    100A Ta
    250nC @ 10V
    43ns
    4.5V 10V
    ±20V
    72 ns
    156 ns
    100A
    20V
    -
    -
    400A
    -
    -
    -
    5mm
    6mm
    950μm
    ROHS3 Compliant
    Contains Lead
    -
    DUAL
    25V
    25V
    Matte Tin (Sn)
    59A
    1290 pF
    CSD19536KTT vs CSD16570Q5B
  • CSD18512Q5B
    CSD18512Q5B
    Texas Instruments
    ACTIVE (Last Updated: 1 week ago)
    6 Weeks
    -
    -
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    AVALANCHE RATED
    MOSFET (Metal Oxide)
    NO LEAD
    -
    not_compliant
    -
    CSD18512
    1
    -
    139W Tc
    Single
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    1.6m Ω @ 30A, 10V
    2.2V @ 250μA
    7120pF @ 20V
    211A Tc
    -
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    0.0023Ohm
    -
    400A
    205 mJ
    -
    -
    5mm
    6mm
    950μm
    ROHS3 Compliant
    -
    YES
    DUAL
    40V
    40V
    Nickel/Palladium/Gold (Ni/Pd/Au)
    32A
    333 pF
    CSD19536KTT vs CSD18512Q5B
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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