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CSD19534Q5A

Texas Instruments CSD19534Q5A

Part Number:
CSD19534Q5A
Manufacturer:
Texas Instruments
Ventron No:
3070030-CSD19534Q5A
Description:
100-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 15.1 mOhm
ECAD Model:
Datasheet:
csd19534q5a

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Specifications
Texas Instruments CSD19534Q5A technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD19534Q5A.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    6 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    NexFET™
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Additional Feature
    AVALANCHE RATED
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    NO LEAD
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    CSD19534
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    3.2W Ta 63W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    3.2W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    9 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    15.1m Ω @ 10A, 10V
  • Vgs(th) (Max) @ Id
    3.4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1680pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    50A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    22nC @ 10V
  • Rise Time
    14ns
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    6 ns
  • Turn-Off Delay Time
    20 ns
  • Continuous Drain Current (ID)
    10A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    100V
  • Avalanche Energy Rating (Eas)
    55 mJ
  • Max Junction Temperature (Tj)
    150°C
  • Feedback Cap-Max (Crss)
    7.4 pF
  • Height
    1.1mm
  • Length
    4.9mm
  • Width
    6mm
  • Thickness
    1mm
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Contains Lead
Description
CSD19534Q5A Description
This CSD19534Q5A power MOSFET can be used for amplification in your circuit. Its maximum power dissipation is 3200 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes nexfet technology.

CSD19534Q5A Features
Halogen Free
Avalanche Rated
RoHS Compliant
Ultra-Low Qg and Qgd
Low Thermal Resistance
Pb-Free Terminal Plating
SON 5 mm × 6 mm Plastic Package

Applications
Motor Control
Primary Side Telecom
CSD19534Q5A More Descriptions
100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 15.1 mOhm 8-VSONP -55 to 150
CSD19534Q5A Texas Instruments MOSFET N-Channel 100V 50A 8-VSONP RoHS
Trans MOSFET N-CH Si 100V 50A 8-Pin VSONP EP T/R
Power Field-Effect Transistor, 10A I(D), 100V, 0.0176ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
100V N-Channel NexFET Power MOSFETs
French Electronic Distributor since 1988
Product Comparison
The three parts on the right have similar specifications to CSD19534Q5A.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Avalanche Energy Rating (Eas)
    Max Junction Temperature (Tj)
    Feedback Cap-Max (Crss)
    Height
    Length
    Width
    Thickness
    RoHS Status
    Lead Free
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Terminal Finish
    View Compare
  • CSD19534Q5A
    CSD19534Q5A
    Texas Instruments
    ACTIVE (Last Updated: 2 days ago)
    6 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    AVALANCHE RATED
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    260
    not_compliant
    NOT SPECIFIED
    CSD19534
    1
    1
    3.2W Ta 63W Tc
    Single
    ENHANCEMENT MODE
    3.2W
    DRAIN
    9 ns
    N-Channel
    SWITCHING
    15.1m Ω @ 10A, 10V
    3.4V @ 250μA
    1680pF @ 50V
    50A Ta
    22nC @ 10V
    14ns
    6V 10V
    ±20V
    6 ns
    20 ns
    10A
    20V
    100V
    55 mJ
    150°C
    7.4 pF
    1.1mm
    4.9mm
    6mm
    1mm
    ROHS3 Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
  • CSD17576Q5BT
    CSD17576Q5BT
    Texas Instruments
    ACTIVE (Last Updated: 5 days ago)
    6 Weeks
    Gold
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    AVALANCHE RATED
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    260
    not_compliant
    NOT SPECIFIED
    CSD17576
    1
    -
    3.1W Ta 125W Tc
    Single
    ENHANCEMENT MODE
    3.1W
    DRAIN
    5 ns
    N-Channel
    SWITCHING
    2m Ω @ 25A, 10V
    1.8V @ 250μA
    4430pF @ 15V
    100A Ta
    32nC @ 4.5V
    16ns
    4.5V 10V
    ±20V
    3 ns
    23 ns
    100A
    20V
    -
    -
    -
    -
    -
    5mm
    6mm
    950μm
    ROHS3 Compliant
    Contains Lead
    30V
    30A
    0.0029Ohm
    400A
    30V
    -
    CSD19534Q5A vs CSD17576Q5BT
  • CSD16570Q5B
    CSD16570Q5B
    Texas Instruments
    ACTIVE (Last Updated: 1 day ago)
    12 Weeks
    Gold
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    AVALANCHE RATED
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    260
    not_compliant
    NOT SPECIFIED
    CSD16570
    1
    -
    3.2W Ta 195W Tc
    Single
    ENHANCEMENT MODE
    -
    DRAIN
    5 ns
    N-Channel
    -
    0.59m Ω @ 50A, 10V
    1.9V @ 250μA
    14000pF @ 12V
    100A Ta
    250nC @ 10V
    43ns
    4.5V 10V
    ±20V
    72 ns
    156 ns
    100A
    20V
    -
    -
    -
    1290 pF
    -
    5mm
    6mm
    950μm
    ROHS3 Compliant
    Contains Lead
    25V
    59A
    -
    400A
    25V
    Matte Tin (Sn)
    CSD19534Q5A vs CSD16570Q5B
  • CSD17382F4
    CSD17382F4
    Texas Instruments
    ACTIVE (Last Updated: 1 day ago)
    6 Weeks
    -
    Surface Mount
    Surface Mount
    3-XFDFN
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    -
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    MOSFET (Metal Oxide)
    BOTTOM
    NO LEAD
    -
    -
    -
    CSD17382
    1
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    500mW
    DRAIN
    59 ns
    N-Channel
    SWITCHING
    64m Ω @ 500mA, 8V
    1.2V @ 250μA
    347pF @ 15V
    2.3A Ta
    2.7nC @ 4.5V
    -
    1.8V 8V
    -
    -
    279 ns
    2.3A
    10V
    -
    -
    150°C
    -
    350μm
    1.035mm
    635μm
    -
    ROHS3 Compliant
    Lead Free
    30V
    -
    -
    -
    -
    -
    CSD19534Q5A vs CSD17382F4
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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