Texas Instruments CSD18541F5T
- Part Number:
- CSD18541F5T
- Manufacturer:
- Texas Instruments
- Ventron No:
- 2481861-CSD18541F5T
- Description:
- 60-V, N channel NexFET? power MOSFET, single LGA 1.5 mm x 0.8mm, 65 mOhm, gate ESD protection
- ECAD Model:
-
- Datasheet:
- csd18541f5
Texas Instruments CSD18541F5T technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD18541F5T.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time6 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case3-SMD, No Lead
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesFemtoFET™
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionBOTTOM
- Base Part NumberCSD18541
- Number of Elements1
- Power Dissipation-Max500mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs65m Ω @ 1A, 10V
- Vgs(th) (Max) @ Id2.2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds777pF @ 30V
- Current - Continuous Drain (Id) @ 25°C2.2A Ta
- Gate Charge (Qg) (Max) @ Vgs14nC @ 10V
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)2.2A
- Threshold Voltage1.75V
- Drain-source On Resistance-Max0.075Ohm
- DS Breakdown Voltage-Min60V
- Feedback Cap-Max (Crss)10.5 pF
- Length1.49mm
- Width730μm
- Thickness338μm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
CSD18541F5T Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 777pF @ 30V.This device conducts a continuous drain current (ID) of 2.2A, which is the maximum continuous current transistor can conduct.Activation of any electrical operation happens at threshold voltage, and this transistor has 1.75V threshold voltage.A normal operation of the DS requires keeping the breakdown voltage above 60V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
CSD18541F5T Features
a continuous drain current (ID) of 2.2A
a threshold voltage of 1.75V
a 60V drain to source voltage (Vdss)
CSD18541F5T Applications
There are a lot of Texas Instruments
CSD18541F5T applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 777pF @ 30V.This device conducts a continuous drain current (ID) of 2.2A, which is the maximum continuous current transistor can conduct.Activation of any electrical operation happens at threshold voltage, and this transistor has 1.75V threshold voltage.A normal operation of the DS requires keeping the breakdown voltage above 60V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
CSD18541F5T Features
a continuous drain current (ID) of 2.2A
a threshold voltage of 1.75V
a 60V drain to source voltage (Vdss)
CSD18541F5T Applications
There are a lot of Texas Instruments
CSD18541F5T applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
CSD18541F5T More Descriptions
60-V, N channel NexFET™ power MOSFET, single LGA 1.5 mm x 0.8mm, 65 mOhm, gate ESD protection
Trans MOSFET N-CH 60V 2.2A 3-Pin PicoStar T/R
Small Signal Field-Effect Transistor, 2.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOS Power Transistors LV ( 41V-100V)
Trans MOSFET N-CH 60V 2.2A 3-Pin PicoStar T/R
Small Signal Field-Effect Transistor, 2.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOS Power Transistors LV ( 41V-100V)
The three parts on the right have similar specifications to CSD18541F5T.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyTerminal PositionBase Part NumberNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Threshold VoltageDrain-source On Resistance-MaxDS Breakdown Voltage-MinFeedback Cap-Max (Crss)LengthWidthThicknessREACH SVHCRoHS StatusLead FreeContact PlatingJESD-609 CodeECCN CodeAdditional FeatureTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Power DissipationCase ConnectionTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)Terminal FinishSurface MountView Compare
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CSD18541F5TACTIVE (Last Updated: 3 days ago)6 WeeksSurface MountSurface Mount3-SMD, No Lead3SILICON-55°C~150°C TJTape & Reel (TR)FemtoFET™yesActive1 (Unlimited)3MOSFET (Metal Oxide)BOTTOMCSD185411500mW TaSingleENHANCEMENT MODEN-ChannelSWITCHING65m Ω @ 1A, 10V2.2V @ 250μA777pF @ 30V2.2A Ta14nC @ 10V60V4.5V 10V±20V2.2A1.75V0.075Ohm60V10.5 pF1.49mm730μm338μmNo SVHCROHS3 CompliantLead Free-------------------- -
ACTIVE (Last Updated: 5 days ago)6 WeeksSurface MountSurface Mount8-PowerTDFN8SILICON-55°C~150°C TJTape & Reel (TR)NexFET™yesActive1 (Unlimited)5MOSFET (Metal Oxide)DUALCSD1757613.1W Ta 125W TcSingleENHANCEMENT MODEN-ChannelSWITCHING2m Ω @ 25A, 10V1.8V @ 250μA4430pF @ 15V100A Ta32nC @ 4.5V30V4.5V 10V±20V100A-0.0029Ohm30V-5mm6mm950μm-ROHS3 CompliantContains LeadGolde4EAR99AVALANCHE RATEDNO LEAD260not_compliantNOT SPECIFIED3.1WDRAIN5 ns16ns3 ns23 ns20V30A400A--
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ACTIVE (Last Updated: 1 day ago)12 WeeksSurface MountSurface Mount8-PowerTDFN8SILICON-55°C~150°C TJTape & Reel (TR)NexFET™yesActive1 (Unlimited)5MOSFET (Metal Oxide)DUALCSD1657013.2W Ta 195W TcSingleENHANCEMENT MODEN-Channel-0.59m Ω @ 50A, 10V1.9V @ 250μA14000pF @ 12V100A Ta250nC @ 10V25V4.5V 10V±20V100A--25V1290 pF5mm6mm950μm-ROHS3 CompliantContains LeadGolde3EAR99AVALANCHE RATEDNO LEAD260not_compliantNOT SPECIFIED-DRAIN5 ns43ns72 ns156 ns20V59A400AMatte Tin (Sn)-
-
ACTIVE (Last Updated: 2 days ago)6 Weeks-Surface Mount3-SMD, No Lead3SILICON-55°C~150°C TJTape & Reel (TR)FemtoFET™yesActive1 (Unlimited)3MOSFET (Metal Oxide)BOTTOMCSD133801500mW TaSingleENHANCEMENT MODEN-ChannelSWITCHING76m Ω @ 400mA, 4.5V1.3V @ 250μA156pF @ 6V3.6A Ta1.2nC @ 4.5V12V1.8V 4.5V8V--0.092Ohm12V12.5 pF690μm600μm345μm-ROHS3 Compliant---EAR99------------2.1A--YES
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40-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 0.96 mOhm
-
12-V, N channel NexFET? power MOSFET, single LGA 0.8 mm x 1.5 mm, 19 mOhm, gate ESD protection
-
30-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 2.9 mOhm
-
25-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 0.82 mOhm
-
40-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 1.6 mOhm
-
30-V, N channel NexFET? power MOSFET, single LGA 1 mm x 0.6mm, 128 mOhm, gate ESD protection
-
30-V, N channel NexFET? power MOSFET, single LGA 1 mm x 0.6mm, 67 mOhm, gate ESD protection
-
12-V, N channel NexFET? power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate ESD protection
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