Texas Instruments CSD18533Q5AT

CSD18533Q5AT Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 140 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2750pF @ 30V.This device conducts a continuous drain current (ID) of 100A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 17A.When the device is turned off, a turn-off delay time of 15 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 267A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 5.2 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 60V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

CSD18533Q5AT Features
the avalanche energy rating (Eas) is 140 mJ
a continuous drain current (ID) of 100A
the turn-off delay time is 15 ns
based on its rated peak drain current 267A.
a 60V drain to source voltage (Vdss)


CSD18533Q5AT Applications
There are a lot of Texas Instruments
CSD18533Q5AT applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching