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CSD18531Q5A

Texas Instruments CSD18531Q5A

Part Number:
CSD18531Q5A
Manufacturer:
Texas Instruments
Ventron No:
2484643-CSD18531Q5A
Description:
MOSFET N-CH 60V 8SON
ECAD Model:
Datasheet:
csd18531q5a

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Specifications
Texas Instruments CSD18531Q5A technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD18531Q5A.
  • Lifecycle Status
    ACTIVE (Last Updated: 10 hours ago)
  • Factory Lead Time
    16 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Cut Tape (CT)
  • Series
    NexFET™
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Additional Feature
    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Peak Reflow Temperature (Cel)
    260
  • Base Part Number
    CSD18531
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    3.1W Ta 156W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    156W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    4.4 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    4.6m Ω @ 22A, 10V
  • Vgs(th) (Max) @ Id
    2.3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    3840pF @ 30V
  • Current - Continuous Drain (Id) @ 25°C
    19A Ta 100A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    43nC @ 10V
  • Rise Time
    7.8ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    2.7 ns
  • Turn-Off Delay Time
    20 ns
  • Continuous Drain Current (ID)
    100A
  • Threshold Voltage
    1.8V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    60V
  • Avalanche Energy Rating (Eas)
    224 mJ
  • Max Junction Temperature (Tj)
    175°C
  • Nominal Vgs
    1.8 V
  • Height
    1.1mm
  • Length
    4.9mm
  • Width
    6mm
  • Thickness
    1mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
CSD18531Q5A Features
? Ultra-Low Qg and Qgd ? Low-Thermal Resistance ? Avalanche Rated ? Logic Level ? Lead-Free Terminal Plating ? RoHS Compliant ? Halogen Free ? SON 5-mm × 6-mm Plastic Package   CSD18531Q5A Applications
? DC-DC Conversion ? Secondary Side Synchronous Rectifier ? Battery Motor Control
 CSD18531Q5A Description
This 60-V3.5-mQ5-Mmx6-mm NexFETMpower MOSFET is designed to minimize loss in power conversion applications.
   
CSD18531Q5A More Descriptions
60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.6 mOhm 8-VSONP -55 to 150
IC, MOSFET, 8SON; Polarité transistor: Canal N; Courant de drain Id: 100A; Tension Vds max..: 60V; Résistance Rds(on): 0.0035ohm; Tension, mesure Rds: 10V; Tension de seuil Vgs: 1.8V; Dissipation de puissance Pd: 3.1W; Type de
Ic, Mosfet, 8Son; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0035Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:3.1W; Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD18531Q5A
Product Comparison
The three parts on the right have similar specifications to CSD18531Q5A.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Base Part Number
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Avalanche Energy Rating (Eas)
    Max Junction Temperature (Tj)
    Nominal Vgs
    Height
    Length
    Width
    Thickness
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Terminal Form
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Lead Free
    Surface Mount
    Terminal Finish
    Feedback Cap-Max (Crss)
    View Compare
  • CSD18531Q5A
    CSD18531Q5A
    Texas Instruments
    ACTIVE (Last Updated: 10 hours ago)
    16 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    NexFET™
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    260
    CSD18531
    1
    1
    3.1W Ta 156W Tc
    Single
    ENHANCEMENT MODE
    156W
    DRAIN
    4.4 ns
    N-Channel
    SWITCHING
    4.6m Ω @ 22A, 10V
    2.3V @ 250μA
    3840pF @ 30V
    19A Ta 100A Tc
    43nC @ 10V
    7.8ns
    4.5V 10V
    ±20V
    2.7 ns
    20 ns
    100A
    1.8V
    20V
    60V
    224 mJ
    175°C
    1.8 V
    1.1mm
    4.9mm
    6mm
    1mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • CSD17576Q5BT
    CSD17576Q5BT
    Texas Instruments
    ACTIVE (Last Updated: 5 days ago)
    6 Weeks
    Gold
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    AVALANCHE RATED
    -
    MOSFET (Metal Oxide)
    DUAL
    260
    CSD17576
    1
    -
    3.1W Ta 125W Tc
    Single
    ENHANCEMENT MODE
    3.1W
    DRAIN
    5 ns
    N-Channel
    SWITCHING
    2m Ω @ 25A, 10V
    1.8V @ 250μA
    4430pF @ 15V
    100A Ta
    32nC @ 4.5V
    16ns
    4.5V 10V
    ±20V
    3 ns
    23 ns
    100A
    -
    20V
    -
    -
    -
    -
    -
    5mm
    6mm
    950μm
    -
    -
    ROHS3 Compliant
    NO LEAD
    not_compliant
    NOT SPECIFIED
    30V
    30A
    0.0029Ohm
    400A
    30V
    Contains Lead
    -
    -
    -
    CSD18531Q5A vs CSD17576Q5BT
  • CSD18512Q5B
    CSD18512Q5B
    Texas Instruments
    ACTIVE (Last Updated: 1 week ago)
    6 Weeks
    -
    -
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    AVALANCHE RATED
    -
    MOSFET (Metal Oxide)
    DUAL
    -
    CSD18512
    1
    -
    139W Tc
    Single
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    1.6m Ω @ 30A, 10V
    2.2V @ 250μA
    7120pF @ 20V
    211A Tc
    -
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    205 mJ
    -
    -
    -
    5mm
    6mm
    950μm
    -
    -
    ROHS3 Compliant
    NO LEAD
    not_compliant
    -
    40V
    32A
    0.0023Ohm
    400A
    40V
    -
    YES
    Nickel/Palladium/Gold (Ni/Pd/Au)
    333 pF
    CSD18531Q5A vs CSD18512Q5B
  • CSD17382F4
    CSD17382F4
    Texas Instruments
    ACTIVE (Last Updated: 1 day ago)
    6 Weeks
    -
    Surface Mount
    Surface Mount
    3-XFDFN
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    -
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    BOTTOM
    -
    CSD17382
    1
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    500mW
    DRAIN
    59 ns
    N-Channel
    SWITCHING
    64m Ω @ 500mA, 8V
    1.2V @ 250μA
    347pF @ 15V
    2.3A Ta
    2.7nC @ 4.5V
    -
    1.8V 8V
    -
    -
    279 ns
    2.3A
    -
    10V
    -
    -
    150°C
    -
    350μm
    1.035mm
    635μm
    -
    -
    -
    ROHS3 Compliant
    NO LEAD
    -
    -
    30V
    -
    -
    -
    -
    Lead Free
    -
    -
    -
    CSD18531Q5A vs CSD17382F4
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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