Texas Instruments CSD17578Q5AT
- Part Number:
- CSD17578Q5AT
- Manufacturer:
- Texas Instruments
- Ventron No:
- 2483084-CSD17578Q5AT
- Description:
- 30-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 9.3 mOhm
- ECAD Model:
-
- Datasheet:
- csd17578q5a
Texas Instruments CSD17578Q5AT technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD17578Q5AT.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time6 Weeks
- Contact PlatingCopper, Tin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesNexFET™
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- Resistance5.9mOhm
- Terminal FinishMatte Tin (Sn)
- Additional FeatureAVALANCHE RATED
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormNO LEAD
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberCSD17578
- Number of Elements1
- Power Dissipation-Max3.1W Ta 42W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Turn On Delay Time4 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs6.9m Ω @ 10A, 10V
- Vgs(th) (Max) @ Id1.9V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1510pF @ 15V
- Current - Continuous Drain (Id) @ 25°C25A Ta
- Gate Charge (Qg) (Max) @ Vgs22.3nC @ 10V
- Rise Time22ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)2 ns
- Turn-Off Delay Time17 ns
- Continuous Drain Current (ID)25A
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)16A
- Pulsed Drain Current-Max (IDM)132A
- DS Breakdown Voltage-Min30V
- Avalanche Energy Rating (Eas)23 mJ
- Feedback Cap-Max (Crss)75 pF
- Length4.9mm
- Width6mm
- Thickness1mm
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead
CSD17578Q5AT Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 23 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1510pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 25A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 16A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 17 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 132A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 4 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 30V in order to maintain normal operation.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
CSD17578Q5AT Features
the avalanche energy rating (Eas) is 23 mJ
a continuous drain current (ID) of 25A
the turn-off delay time is 17 ns
based on its rated peak drain current 132A.
a 30V drain to source voltage (Vdss)
CSD17578Q5AT Applications
There are a lot of Texas Instruments
CSD17578Q5AT applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 23 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1510pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 25A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 16A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 17 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 132A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 4 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 30V in order to maintain normal operation.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
CSD17578Q5AT Features
the avalanche energy rating (Eas) is 23 mJ
a continuous drain current (ID) of 25A
the turn-off delay time is 17 ns
based on its rated peak drain current 132A.
a 30V drain to source voltage (Vdss)
CSD17578Q5AT Applications
There are a lot of Texas Instruments
CSD17578Q5AT applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
CSD17578Q5AT More Descriptions
30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 9.3 mOhm 8-VSONP -55 to 150
Trans MOSFET N-CH Si 30V 16A 8-Pin VSONP EP T/R
Power Field-Effect Transistor, 16A I(D), 30V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Mosfet, N-Ch, 30V, 25A, Vson-8
CSD17578Q5A 30V, N CHANNEL NEXFE
Trans MOSFET N-CH Si 30V 16A 8-Pin VSONP EP T/R
Power Field-Effect Transistor, 16A I(D), 30V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Mosfet, N-Ch, 30V, 25A, Vson-8
CSD17578Q5A 30V, N CHANNEL NEXFE
The three parts on the right have similar specifications to CSD17578Q5AT.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsResistanceTerminal FinishAdditional FeatureTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModeCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Feedback Cap-Max (Crss)LengthWidthThicknessRoHS StatusLead FreeECCN CodePower DissipationDrain-source On Resistance-MaxNumber of ChannelsMax Junction Temperature (Tj)HeightSurface MountView Compare
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CSD17578Q5ATACTIVE (Last Updated: 3 days ago)6 WeeksCopper, TinSurface MountSurface Mount8-PowerTDFN8SILICON-55°C~150°C TJTape & Reel (TR)NexFET™e3yesActive1 (Unlimited)55.9mOhmMatte Tin (Sn)AVALANCHE RATEDMOSFET (Metal Oxide)DUALNO LEAD260not_compliantNOT SPECIFIEDCSD1757813.1W Ta 42W TcSingleENHANCEMENT MODEDRAIN4 nsN-ChannelSWITCHING6.9m Ω @ 10A, 10V1.9V @ 250μA1510pF @ 15V25A Ta22.3nC @ 10V22ns30V4.5V 10V±20V2 ns17 ns25A20V16A132A30V23 mJ75 pF4.9mm6mm1mmROHS3 CompliantContains Lead-------- -
ACTIVE (Last Updated: 5 days ago)6 WeeksGoldSurface MountSurface Mount8-PowerTDFN8SILICON-55°C~150°C TJTape & Reel (TR)NexFET™e4yesActive1 (Unlimited)5--AVALANCHE RATEDMOSFET (Metal Oxide)DUALNO LEAD260not_compliantNOT SPECIFIEDCSD1757613.1W Ta 125W TcSingleENHANCEMENT MODEDRAIN5 nsN-ChannelSWITCHING2m Ω @ 25A, 10V1.8V @ 250μA4430pF @ 15V100A Ta32nC @ 4.5V16ns30V4.5V 10V±20V3 ns23 ns100A20V30A400A30V--5mm6mm950μmROHS3 CompliantContains LeadEAR993.1W0.0029Ohm----
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ACTIVE (Last Updated: 1 day ago)6 Weeks-Surface MountSurface Mount3-XFDFN3SILICON-55°C~150°C TJTape & Reel (TR)FemtoFET™-yesActive1 (Unlimited)3---MOSFET (Metal Oxide)BOTTOMNO LEAD---CSD173821500mW TaSingleENHANCEMENT MODEDRAIN59 nsN-ChannelSWITCHING64m Ω @ 500mA, 8V1.2V @ 250μA347pF @ 15V2.3A Ta2.7nC @ 4.5V-30V1.8V 8V--279 ns2.3A10V-----1.035mm635μm-ROHS3 CompliantLead FreeEAR99500mW-1150°C350μm-
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ACTIVE (Last Updated: 2 days ago)6 Weeks--Surface Mount3-SMD, No Lead3SILICON-55°C~150°C TJTape & Reel (TR)FemtoFET™-yesActive1 (Unlimited)3---MOSFET (Metal Oxide)BOTTOM----CSD133801500mW TaSingleENHANCEMENT MODE--N-ChannelSWITCHING76m Ω @ 400mA, 4.5V1.3V @ 250μA156pF @ 6V3.6A Ta1.2nC @ 4.5V-12V1.8V 4.5V8V----2.1A-12V-12.5 pF690μm600μm345μmROHS3 Compliant-EAR99-0.092Ohm---YES
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40-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 0.96 mOhm
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12-V, N channel NexFET? power MOSFET, single LGA 0.8 mm x 1.5 mm, 19 mOhm, gate ESD protection
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30-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 2.9 mOhm
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25-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 0.82 mOhm
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40-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 1.6 mOhm
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30-V, N channel NexFET? power MOSFET, single LGA 1 mm x 0.6mm, 128 mOhm, gate ESD protection
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30-V, N channel NexFET? power MOSFET, single LGA 1 mm x 0.6mm, 67 mOhm, gate ESD protection
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12-V, N channel NexFET? power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate ESD protection
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