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CSD17313Q2

Texas Instruments CSD17313Q2

Part Number:
CSD17313Q2
Manufacturer:
Texas Instruments
Ventron No:
2480675-CSD17313Q2
Description:
MOSFET N-CH 30V 5A 6SON
ECAD Model:
Datasheet:
csd17313q2

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Specifications
Texas Instruments CSD17313Q2 technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD17313Q2.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    6 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-WDFN Exposed Pad
  • Number of Pins
    6
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    NexFET™
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Nickel/Palladium/Gold (Ni/Pd/Au)
  • Subcategory
    FET General Purpose Powers
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Peak Reflow Temperature (Cel)
    260
  • Base Part Number
    CSD17313
  • Pin Count
    8
  • Number of Elements
    1
  • Power Dissipation-Max
    2.3W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.3W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    2.8 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    30m Ω @ 4A, 8V
  • Vgs(th) (Max) @ Id
    1.8V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    340pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    5A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    2.7nC @ 4.5V
  • Rise Time
    3.9ns
  • Drive Voltage (Max Rds On,Min Rds On)
    3V 8V
  • Vgs (Max)
    10V, -8V
  • Fall Time (Typ)
    1.3 ns
  • Turn-Off Delay Time
    4.2 ns
  • Continuous Drain Current (ID)
    5A
  • Threshold Voltage
    1.3V
  • Gate to Source Voltage (Vgs)
    10V
  • Drain Current-Max (Abs) (ID)
    5A
  • Drain-source On Resistance-Max
    0.042Ohm
  • Drain to Source Breakdown Voltage
    30V
  • Pulsed Drain Current-Max (IDM)
    20A
  • Height
    800μm
  • Length
    2mm
  • Width
    2mm
  • Thickness
    750μm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
CSD17313Q2 Description
CSD17313Q2 is a 30v N-channel NexFET? Power MOSFET. The 30-V, 24-mΩ, 2-mm × 2-mm SON NexFET? power MOSFET CSD17313Q2 is designed to minimize losses in power conversion applications and is optimized for 5-V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package. The CSD17313Q2 is offered in the WSON-6 package. It is specified for operation from -55°C to 150°C.

CSD17313Q2 Features
Optimized for 5-V Gate Drive
Ultra-Low Qg and Qgd
Low Thermal Resistance
Pb-Free
RoHS Compliant
Halogen-Free
SON 2-mm × 2-mm Plastic Package

CSD17313Q2 Applications
DC-DC Converters
Load Management Applications
E-Mobility
E-Communication or Internet-of-Things
Stationary Energy Storage
Cordless Power Tools
CSD17313Q2 More Descriptions
TEXAS INSTRUMENTS - CSD17313Q2 - MOSFET Transistor, N Channel, 5 A, 30 V, 0.024 ohm, 8 V, 1.3 V
30-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 32 mOhm 6-WSON -55 to 150
the nexfet power mosfet has been designed to minimize losses in power conversion applications and optimized for 5v gate drive applications. the 2-mm 2-mm son offers excellent thermal performance for the size of the package.
Mosfet, N Ch, 30V, 5A, Son-6; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.024Ohm; Rds(On) Test Voltage Vgs:8V; Threshold Voltage Vgs:1.3V; Power Dissipation Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD17313Q2
Product Comparison
The three parts on the right have similar specifications to CSD17313Q2.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Base Part Number
    Pin Count
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Height
    Length
    Width
    Thickness
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Additional Feature
    Terminal Form
    Reach Compliance Code
    Drain to Source Voltage (Vdss)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Feedback Cap-Max (Crss)
    View Compare
  • CSD17313Q2
    CSD17313Q2
    Texas Instruments
    ACTIVE (Last Updated: 4 days ago)
    6 Weeks
    Surface Mount
    Surface Mount
    6-WDFN Exposed Pad
    6
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e4
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    DUAL
    260
    CSD17313
    8
    1
    2.3W Ta
    Single
    ENHANCEMENT MODE
    2.3W
    DRAIN
    2.8 ns
    N-Channel
    SWITCHING
    30m Ω @ 4A, 8V
    1.8V @ 250μA
    340pF @ 15V
    5A Tc
    2.7nC @ 4.5V
    3.9ns
    3V 8V
    10V, -8V
    1.3 ns
    4.2 ns
    5A
    1.3V
    10V
    5A
    0.042Ohm
    30V
    20A
    800μm
    2mm
    2mm
    750μm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • CSD18512Q5B
    CSD18512Q5B
    Texas Instruments
    ACTIVE (Last Updated: 1 week ago)
    6 Weeks
    -
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    -
    MOSFET (Metal Oxide)
    DUAL
    -
    CSD18512
    -
    1
    139W Tc
    Single
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    1.6m Ω @ 30A, 10V
    2.2V @ 250μA
    7120pF @ 20V
    211A Tc
    -
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    32A
    0.0023Ohm
    -
    400A
    -
    5mm
    6mm
    950μm
    -
    -
    ROHS3 Compliant
    -
    YES
    AVALANCHE RATED
    NO LEAD
    not_compliant
    40V
    40V
    205 mJ
    333 pF
    CSD17313Q2 vs CSD18512Q5B
  • CSD17484F4
    CSD17484F4
    Texas Instruments
    ACTIVE (Last Updated: 1 day ago)
    6 Weeks
    Surface Mount
    Surface Mount
    3-XFDFN
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    -
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    BOTTOM
    -
    CSD17484
    3
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    -
    -
    3 ns
    N-Channel
    SWITCHING
    121m Ω @ 500mA, 8V
    1.1V @ 250μA
    195pF @ 15V
    3A Ta
    1.2nC @ 4.5V
    1ns
    1.8V 8V
    -
    4 ns
    11 ns
    3A
    -
    12V
    3A
    0.27Ohm
    -
    -
    -
    1.035mm
    635μm
    200μm
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    NO LEAD
    -
    30V
    -
    -
    2.9 pF
    CSD17313Q2 vs CSD17484F4
  • CSD13380F3
    CSD13380F3
    Texas Instruments
    ACTIVE (Last Updated: 2 days ago)
    6 Weeks
    -
    Surface Mount
    3-SMD, No Lead
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    -
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    BOTTOM
    -
    CSD13380
    -
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    -
    -
    -
    N-Channel
    SWITCHING
    76m Ω @ 400mA, 4.5V
    1.3V @ 250μA
    156pF @ 6V
    3.6A Ta
    1.2nC @ 4.5V
    -
    1.8V 4.5V
    8V
    -
    -
    -
    -
    -
    2.1A
    0.092Ohm
    -
    -
    -
    690μm
    600μm
    345μm
    -
    -
    ROHS3 Compliant
    -
    YES
    -
    -
    -
    12V
    12V
    -
    12.5 pF
    CSD17313Q2 vs CSD13380F3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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