CSD16556Q5B

Texas Instruments CSD16556Q5B

Part Number:
CSD16556Q5B
Manufacturer:
Texas Instruments
Ventron No:
2484334-CSD16556Q5B
Description:
25-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 1.5 mOhm
ECAD Model:
Datasheet:
csd16556q5b

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Specifications
Texas Instruments CSD16556Q5B technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD16556Q5B.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    6 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    NexFET™
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    AVALANCHE RATED
  • Subcategory
    FET General Purpose Powers
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Peak Reflow Temperature (Cel)
    260
  • Base Part Number
    CSD16556
  • Number of Elements
    1
  • Power Dissipation-Max
    3.2W Ta 191W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    3.2W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    17 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    1.07m Ω @ 30A, 10V
  • Vgs(th) (Max) @ Id
    1.7V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    6180pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    100A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    47nC @ 4.5V
  • Rise Time
    34ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    13 ns
  • Turn-Off Delay Time
    25 ns
  • Continuous Drain Current (ID)
    100A
  • Threshold Voltage
    1.4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    40A
  • Drain to Source Breakdown Voltage
    25V
  • Pulsed Drain Current-Max (IDM)
    249A
  • Avalanche Energy Rating (Eas)
    530 mJ
  • Length
    5mm
  • Width
    6mm
  • Thickness
    950μm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Contains Lead
Description
CSD16556Q5B Descriptions
This 25 V, 0.9 mΩ, 5 × 6 mm SON NexFET? power MOSFET TA = 25°C VALUE UNIT is designed to minimize losses in VDS Drain-to-Source Voltage 25 V synchronous rectification and other power conversion applications.

CSD16556Q5B Features
Extremely Low Resistance Ultralow Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm × 6-mm Plastic Package

CSD16556Q5B Applications

Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems
Optimized for Synchronous FET Applications

CSD16556Q5B More Descriptions
25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.5 mOhm 8-VSON-CLIP -55 to 150
Mosfet, N Channel, 25V, 100A, 0.0009Ohm,; Msl:Msl 1 - Unlimited; Svhc:No Svhc (15-Jan-2019) Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD16556Q5B
Trans MOSFET N-CH Si 25V 100A 8-Pin VSON-CLIP EP T/R
Power Field-Effect Transistor, 40A I(D), 25V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET BVDSS: 41V 60V POWERDI333
Product Comparison
The three parts on the right have similar specifications to CSD16556Q5B.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Base Part Number
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Length
    Width
    Thickness
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Contact Plating
    Terminal Form
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Drain to Source Voltage (Vdss)
    DS Breakdown Voltage-Min
    Feedback Cap-Max (Crss)
    Surface Mount
    Drain-source On Resistance-Max
    View Compare
  • CSD16556Q5B
    CSD16556Q5B
    ACTIVE (Last Updated: 1 day ago)
    6 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Matte Tin (Sn)
    AVALANCHE RATED
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    DUAL
    260
    CSD16556
    1
    3.2W Ta 191W Tc
    Single
    ENHANCEMENT MODE
    3.2W
    DRAIN
    17 ns
    N-Channel
    SWITCHING
    1.07m Ω @ 30A, 10V
    1.7V @ 250μA
    6180pF @ 15V
    100A Tc
    47nC @ 4.5V
    34ns
    4.5V 10V
    ±20V
    13 ns
    25 ns
    100A
    1.4V
    20V
    40A
    25V
    249A
    530 mJ
    5mm
    6mm
    950μm
    No SVHC
    No
    ROHS3 Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • CSD16570Q5B
    ACTIVE (Last Updated: 1 day ago)
    12 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Matte Tin (Sn)
    AVALANCHE RATED
    -
    MOSFET (Metal Oxide)
    DUAL
    260
    CSD16570
    1
    3.2W Ta 195W Tc
    Single
    ENHANCEMENT MODE
    -
    DRAIN
    5 ns
    N-Channel
    -
    0.59m Ω @ 50A, 10V
    1.9V @ 250μA
    14000pF @ 12V
    100A Ta
    250nC @ 10V
    43ns
    4.5V 10V
    ±20V
    72 ns
    156 ns
    100A
    -
    20V
    59A
    -
    400A
    -
    5mm
    6mm
    950μm
    -
    -
    ROHS3 Compliant
    Contains Lead
    Gold
    NO LEAD
    not_compliant
    NOT SPECIFIED
    25V
    25V
    1290 pF
    -
    -
  • CSD18512Q5B
    ACTIVE (Last Updated: 1 week ago)
    6 Weeks
    -
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    AVALANCHE RATED
    -
    MOSFET (Metal Oxide)
    DUAL
    -
    CSD18512
    1
    139W Tc
    Single
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    1.6m Ω @ 30A, 10V
    2.2V @ 250μA
    7120pF @ 20V
    211A Tc
    -
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    32A
    -
    400A
    205 mJ
    5mm
    6mm
    950μm
    -
    -
    ROHS3 Compliant
    -
    -
    NO LEAD
    not_compliant
    -
    40V
    40V
    333 pF
    YES
    0.0023Ohm
  • CSD13380F3
    ACTIVE (Last Updated: 2 days ago)
    6 Weeks
    -
    Surface Mount
    3-SMD, No Lead
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    -
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    -
    MOSFET (Metal Oxide)
    BOTTOM
    -
    CSD13380
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    -
    -
    -
    N-Channel
    SWITCHING
    76m Ω @ 400mA, 4.5V
    1.3V @ 250μA
    156pF @ 6V
    3.6A Ta
    1.2nC @ 4.5V
    -
    1.8V 4.5V
    8V
    -
    -
    -
    -
    -
    2.1A
    -
    -
    -
    690μm
    600μm
    345μm
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    12V
    12V
    12.5 pF
    YES
    0.092Ohm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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