Texas Instruments CSD16556Q5B
- Part Number:
- CSD16556Q5B
- Manufacturer:
- Texas Instruments
- Ventron No:
- 2484334-CSD16556Q5B
- Description:
- 25-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 1.5 mOhm
- Datasheet:
- csd16556q5b
Texas Instruments CSD16556Q5B technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD16556Q5B.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time6 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesNexFET™
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureAVALANCHE RATED
- SubcategoryFET General Purpose Powers
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)260
- Base Part NumberCSD16556
- Number of Elements1
- Power Dissipation-Max3.2W Ta 191W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation3.2W
- Case ConnectionDRAIN
- Turn On Delay Time17 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.07m Ω @ 30A, 10V
- Vgs(th) (Max) @ Id1.7V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds6180pF @ 15V
- Current - Continuous Drain (Id) @ 25°C100A Tc
- Gate Charge (Qg) (Max) @ Vgs47nC @ 4.5V
- Rise Time34ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)13 ns
- Turn-Off Delay Time25 ns
- Continuous Drain Current (ID)100A
- Threshold Voltage1.4V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)40A
- Drain to Source Breakdown Voltage25V
- Pulsed Drain Current-Max (IDM)249A
- Avalanche Energy Rating (Eas)530 mJ
- Length5mm
- Width6mm
- Thickness950μm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead
CSD16556Q5B Descriptions
This 25 V, 0.9 mΩ, 5 × 6 mm SON NexFET? power MOSFET TA = 25°C VALUE UNIT is designed to minimize losses in VDS Drain-to-Source Voltage 25 V synchronous rectification and other power conversion applications.
CSD16556Q5B Features
Extremely Low Resistance Ultralow Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm × 6-mm Plastic Package
CSD16556Q5B Applications
Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems
Optimized for Synchronous FET Applications
This 25 V, 0.9 mΩ, 5 × 6 mm SON NexFET? power MOSFET TA = 25°C VALUE UNIT is designed to minimize losses in VDS Drain-to-Source Voltage 25 V synchronous rectification and other power conversion applications.
CSD16556Q5B Features
Extremely Low Resistance Ultralow Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm × 6-mm Plastic Package
CSD16556Q5B Applications
Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems
Optimized for Synchronous FET Applications
CSD16556Q5B More Descriptions
25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.5 mOhm 8-VSON-CLIP -55 to 150
Mosfet, N Channel, 25V, 100A, 0.0009Ohm,; Msl:Msl 1 - Unlimited; Svhc:No Svhc (15-Jan-2019) Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD16556Q5B
Trans MOSFET N-CH Si 25V 100A 8-Pin VSON-CLIP EP T/R
Power Field-Effect Transistor, 40A I(D), 25V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET BVDSS: 41V 60V POWERDI333
Mosfet, N Channel, 25V, 100A, 0.0009Ohm,; Msl:Msl 1 - Unlimited; Svhc:No Svhc (15-Jan-2019) Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD16556Q5B
Trans MOSFET N-CH Si 25V 100A 8-Pin VSON-CLIP EP T/R
Power Field-Effect Transistor, 40A I(D), 25V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET BVDSS: 41V 60V POWERDI333
The three parts on the right have similar specifications to CSD16556Q5B.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionPeak Reflow Temperature (Cel)Base Part NumberNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)LengthWidthThicknessREACH SVHCRadiation HardeningRoHS StatusLead FreeContact PlatingTerminal FormReach Compliance CodeTime@Peak Reflow Temperature-Max (s)Drain to Source Voltage (Vdss)DS Breakdown Voltage-MinFeedback Cap-Max (Crss)Surface MountDrain-source On Resistance-MaxView Compare
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CSD16556Q5BACTIVE (Last Updated: 1 day ago)6 WeeksSurface MountSurface Mount8-PowerTDFN8SILICON-55°C~150°C TJTape & Reel (TR)NexFET™e3yesActive1 (Unlimited)5EAR99Matte Tin (Sn)AVALANCHE RATEDFET General Purpose PowersMOSFET (Metal Oxide)DUAL260CSD1655613.2W Ta 191W TcSingleENHANCEMENT MODE3.2WDRAIN17 nsN-ChannelSWITCHING1.07m Ω @ 30A, 10V1.7V @ 250μA6180pF @ 15V100A Tc47nC @ 4.5V34ns4.5V 10V±20V13 ns25 ns100A1.4V20V40A25V249A530 mJ5mm6mm950μmNo SVHCNoROHS3 CompliantContains Lead----------
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ACTIVE (Last Updated: 1 day ago)12 WeeksSurface MountSurface Mount8-PowerTDFN8SILICON-55°C~150°C TJTape & Reel (TR)NexFET™e3yesActive1 (Unlimited)5EAR99Matte Tin (Sn)AVALANCHE RATED-MOSFET (Metal Oxide)DUAL260CSD1657013.2W Ta 195W TcSingleENHANCEMENT MODE-DRAIN5 nsN-Channel-0.59m Ω @ 50A, 10V1.9V @ 250μA14000pF @ 12V100A Ta250nC @ 10V43ns4.5V 10V±20V72 ns156 ns100A-20V59A-400A-5mm6mm950μm--ROHS3 CompliantContains LeadGoldNO LEADnot_compliantNOT SPECIFIED25V25V1290 pF--
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ACTIVE (Last Updated: 1 week ago)6 Weeks-Surface Mount8-PowerTDFN8SILICON-55°C~150°C TJTape & Reel (TR)NexFET™e4yesActive1 (Unlimited)5EAR99Nickel/Palladium/Gold (Ni/Pd/Au)AVALANCHE RATED-MOSFET (Metal Oxide)DUAL-CSD185121139W TcSingleENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING1.6m Ω @ 30A, 10V2.2V @ 250μA7120pF @ 20V211A Tc--4.5V 10V±20V-----32A-400A205 mJ5mm6mm950μm--ROHS3 Compliant--NO LEADnot_compliant-40V40V333 pFYES0.0023Ohm
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ACTIVE (Last Updated: 2 days ago)6 Weeks-Surface Mount3-SMD, No Lead3SILICON-55°C~150°C TJTape & Reel (TR)FemtoFET™-yesActive1 (Unlimited)3EAR99---MOSFET (Metal Oxide)BOTTOM-CSD133801500mW TaSingleENHANCEMENT MODE---N-ChannelSWITCHING76m Ω @ 400mA, 4.5V1.3V @ 250μA156pF @ 6V3.6A Ta1.2nC @ 4.5V-1.8V 4.5V8V-----2.1A---690μm600μm345μm--ROHS3 Compliant-----12V12V12.5 pFYES0.092Ohm
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