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CSD16415Q5

Texas Instruments CSD16415Q5

Part Number:
CSD16415Q5
Manufacturer:
Texas Instruments
Ventron No:
2484369-CSD16415Q5
Description:
25-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 1.8 mOhm
ECAD Model:
Datasheet:
csd16415q5

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Specifications
Texas Instruments CSD16415Q5 technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD16415Q5.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    6 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    NexFET™
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Additional Feature
    AVALANCHE RATED
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Peak Reflow Temperature (Cel)
    260
  • Base Part Number
    CSD16415
  • Number of Elements
    1
  • Power Dissipation-Max
    3.2W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    3.2W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    16.6 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    1.15m Ω @ 40A, 10V
  • Vgs(th) (Max) @ Id
    1.9V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4100pF @ 12.5V
  • Current - Continuous Drain (Id) @ 25°C
    100A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    29nC @ 4.5V
  • Rise Time
    30ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    16V, -12V
  • Fall Time (Typ)
    12.7 ns
  • Turn-Off Delay Time
    20 ns
  • Continuous Drain Current (ID)
    100A
  • Threshold Voltage
    1.5V
  • Gate to Source Voltage (Vgs)
    16V
  • Drain to Source Breakdown Voltage
    25V
  • Pulsed Drain Current-Max (IDM)
    200A
  • Avalanche Energy Rating (Eas)
    500 mJ
  • Nominal Vgs
    1.5 V
  • Feedback Cap-Max (Crss)
    230 pF
  • Height
    1.05mm
  • Length
    5mm
  • Width
    6mm
  • Thickness
    1mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
CSD16415Q5 Description This 25 V, 1.3 mΩ, 5 x 6 mm SON NexFET? power MOSFET has been designed to minimize losses in power conversion applications.
CSD16415Q5 Features Ultralow Qg and Qgd Very Low On-Resistance Low Thermal Resistance Avalanche Rated Pb-Free Terminal Plating RoHS Compliant Halogen-Free
CSD16415Q5 Applications Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom, and Computing Systems Optimized for Synchronous FET Applications
CSD16415Q5 More Descriptions
25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.8 mOhm 8-VSON-CLIP -55 to 150
MOSFET, N-CH, 25V, 100A, VSON-8; Polarité transistor: Canal N; Courant de drain Id: 100A; Tension Vds max..: 25V; Résistance Rds(on): 990µohm; Tension, mesure Rds: 10V; Tension de seuil Vgs: 1.5V; Dissipation de puissance Pd: 3
Mosfet, N-Ch, 25V, 100A, Vson-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:25V; On Resistance Rds(On):990Μohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD16415Q5
Product Comparison
The three parts on the right have similar specifications to CSD16415Q5.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Base Part Number
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Nominal Vgs
    Feedback Cap-Max (Crss)
    Height
    Length
    Width
    Thickness
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Surface Mount
    Terminal Finish
    Terminal Form
    Reach Compliance Code
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Pin Count
    Lead Free
    View Compare
  • CSD16415Q5
    CSD16415Q5
    Texas Instruments
    ACTIVE (Last Updated: 3 days ago)
    6 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    AVALANCHE RATED
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    260
    CSD16415
    1
    3.2W Ta
    Single
    ENHANCEMENT MODE
    3.2W
    DRAIN
    16.6 ns
    N-Channel
    SWITCHING
    1.15m Ω @ 40A, 10V
    1.9V @ 250μA
    4100pF @ 12.5V
    100A Tc
    29nC @ 4.5V
    30ns
    4.5V 10V
    16V, -12V
    12.7 ns
    20 ns
    100A
    1.5V
    16V
    25V
    200A
    500 mJ
    1.5 V
    230 pF
    1.05mm
    5mm
    6mm
    1mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • CSD18512Q5B
    CSD18512Q5B
    Texas Instruments
    ACTIVE (Last Updated: 1 week ago)
    6 Weeks
    -
    -
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    AVALANCHE RATED
    -
    MOSFET (Metal Oxide)
    DUAL
    -
    CSD18512
    1
    139W Tc
    Single
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    1.6m Ω @ 30A, 10V
    2.2V @ 250μA
    7120pF @ 20V
    211A Tc
    -
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    400A
    205 mJ
    -
    333 pF
    -
    5mm
    6mm
    950μm
    -
    -
    ROHS3 Compliant
    YES
    Nickel/Palladium/Gold (Ni/Pd/Au)
    NO LEAD
    not_compliant
    40V
    32A
    0.0023Ohm
    40V
    -
    -
    CSD16415Q5 vs CSD18512Q5B
  • CSD17484F4
    CSD17484F4
    Texas Instruments
    ACTIVE (Last Updated: 1 day ago)
    6 Weeks
    -
    Surface Mount
    Surface Mount
    3-XFDFN
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    -
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    BOTTOM
    -
    CSD17484
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    -
    -
    3 ns
    N-Channel
    SWITCHING
    121m Ω @ 500mA, 8V
    1.1V @ 250μA
    195pF @ 15V
    3A Ta
    1.2nC @ 4.5V
    1ns
    1.8V 8V
    -
    4 ns
    11 ns
    3A
    -
    12V
    -
    -
    -
    -
    2.9 pF
    -
    1.035mm
    635μm
    200μm
    -
    -
    ROHS3 Compliant
    -
    -
    NO LEAD
    -
    30V
    3A
    0.27Ohm
    -
    3
    Lead Free
    CSD16415Q5 vs CSD17484F4
  • CSD13380F3
    CSD13380F3
    Texas Instruments
    ACTIVE (Last Updated: 2 days ago)
    6 Weeks
    -
    -
    Surface Mount
    3-SMD, No Lead
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    -
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    BOTTOM
    -
    CSD13380
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    -
    -
    -
    N-Channel
    SWITCHING
    76m Ω @ 400mA, 4.5V
    1.3V @ 250μA
    156pF @ 6V
    3.6A Ta
    1.2nC @ 4.5V
    -
    1.8V 4.5V
    8V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    12.5 pF
    -
    690μm
    600μm
    345μm
    -
    -
    ROHS3 Compliant
    YES
    -
    -
    -
    12V
    2.1A
    0.092Ohm
    12V
    -
    -
    CSD16415Q5 vs CSD13380F3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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