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CSD16410Q5A

Texas Instruments CSD16410Q5A

Part Number:
CSD16410Q5A
Manufacturer:
Texas Instruments
Ventron No:
3070987-CSD16410Q5A
Description:
25-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 12 mOhm
ECAD Model:
Datasheet:
csd16410q5a

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Specifications
Texas Instruments CSD16410Q5A technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD16410Q5A.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    6 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    NexFET™
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Additional Feature
    AVALANCHE RATED
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Peak Reflow Temperature (Cel)
    260
  • Base Part Number
    CSD16410
  • Pin Count
    8
  • Number of Elements
    1
  • Power Dissipation-Max
    3W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    3W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    6.2 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    8.5m Ω @ 17A, 10V
  • Vgs(th) (Max) @ Id
    2.3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    740pF @ 12.5V
  • Current - Continuous Drain (Id) @ 25°C
    16A Ta 59A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    5nC @ 4.5V
  • Rise Time
    10.7ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    16V, -12V
  • Fall Time (Typ)
    3.6 ns
  • Turn-Off Delay Time
    6.5 ns
  • Continuous Drain Current (ID)
    59A
  • Threshold Voltage
    1.9V
  • Gate to Source Voltage (Vgs)
    16V
  • Drain to Source Breakdown Voltage
    25V
  • Dual Supply Voltage
    25V
  • Nominal Vgs
    1.9 V
  • Feedback Cap-Max (Crss)
    52 pF
  • Length
    4.9mm
  • Width
    6mm
  • Thickness
    1mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Contains Lead
Description
CSD16410Q5A Description
CSD16410Q5A is a 25V N channel NexFET? power MOSFET. The MOSFET CSD16410Q5A can be applied in Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom, and Computing Systems, and Optimized for Control FET Applications. The NexFET? power MOSFET CSD16410Q5A has been designed to minimize losses in power conversion applications. 

CSD16410Q5A Features
Ultra-Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5mm × 6mm Plastic Package

CSD16410Q5A Applications
Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom, and Computing Systems
Optimized for Control FET Applications
CSD16410Q5A More Descriptions
25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 12 mOhm 8-VSONP -55 to 150
the nexfet power mosfet has been designed to minimize losses in power conversion applications.
FET, N CH, SINGLE, 25V, 8SON; Transistor Polarity:N Channel; Continuous Drain Current Id:59A; Drain Source Voltage Vds:25V; On Resistance Rds(on):6.8mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:3W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SON; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:59A; Package / Case:SON; Power Dissipation Pd:3W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:25V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to CSD16410Q5A.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Base Part Number
    Pin Count
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Nominal Vgs
    Feedback Cap-Max (Crss)
    Length
    Width
    Thickness
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Terminal Finish
    Terminal Form
    Reach Compliance Code
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    View Compare
  • CSD16410Q5A
    CSD16410Q5A
    Texas Instruments
    ACTIVE (Last Updated: 2 days ago)
    6 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e3
    yes
    Active
    1 (Unlimited)
    5
    SMD/SMT
    EAR99
    AVALANCHE RATED
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    260
    CSD16410
    8
    1
    3W Ta
    Single
    ENHANCEMENT MODE
    3W
    DRAIN
    6.2 ns
    N-Channel
    SWITCHING
    8.5m Ω @ 17A, 10V
    2.3V @ 250μA
    740pF @ 12.5V
    16A Ta 59A Tc
    5nC @ 4.5V
    10.7ns
    4.5V 10V
    16V, -12V
    3.6 ns
    6.5 ns
    59A
    1.9V
    16V
    25V
    25V
    1.9 V
    52 pF
    4.9mm
    6mm
    1mm
    No SVHC
    No
    ROHS3 Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • CSD18512Q5B
    CSD18512Q5B
    Texas Instruments
    ACTIVE (Last Updated: 1 week ago)
    6 Weeks
    -
    -
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e4
    yes
    Active
    1 (Unlimited)
    5
    -
    EAR99
    AVALANCHE RATED
    -
    MOSFET (Metal Oxide)
    DUAL
    -
    CSD18512
    -
    1
    139W Tc
    Single
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    1.6m Ω @ 30A, 10V
    2.2V @ 250μA
    7120pF @ 20V
    211A Tc
    -
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    333 pF
    5mm
    6mm
    950μm
    -
    -
    ROHS3 Compliant
    -
    YES
    Nickel/Palladium/Gold (Ni/Pd/Au)
    NO LEAD
    not_compliant
    40V
    32A
    0.0023Ohm
    400A
    40V
    205 mJ
    CSD16410Q5A vs CSD18512Q5B
  • CSD17484F4
    CSD17484F4
    Texas Instruments
    ACTIVE (Last Updated: 1 day ago)
    6 Weeks
    -
    Surface Mount
    Surface Mount
    3-XFDFN
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    -
    yes
    Active
    1 (Unlimited)
    3
    -
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    BOTTOM
    -
    CSD17484
    3
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    -
    -
    3 ns
    N-Channel
    SWITCHING
    121m Ω @ 500mA, 8V
    1.1V @ 250μA
    195pF @ 15V
    3A Ta
    1.2nC @ 4.5V
    1ns
    1.8V 8V
    -
    4 ns
    11 ns
    3A
    -
    12V
    -
    -
    -
    2.9 pF
    1.035mm
    635μm
    200μm
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    NO LEAD
    -
    30V
    3A
    0.27Ohm
    -
    -
    -
    CSD16410Q5A vs CSD17484F4
  • CSD13380F3
    CSD13380F3
    Texas Instruments
    ACTIVE (Last Updated: 2 days ago)
    6 Weeks
    -
    -
    Surface Mount
    3-SMD, No Lead
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    -
    yes
    Active
    1 (Unlimited)
    3
    -
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    BOTTOM
    -
    CSD13380
    -
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    -
    -
    -
    N-Channel
    SWITCHING
    76m Ω @ 400mA, 4.5V
    1.3V @ 250μA
    156pF @ 6V
    3.6A Ta
    1.2nC @ 4.5V
    -
    1.8V 4.5V
    8V
    -
    -
    -
    -
    -
    -
    -
    -
    12.5 pF
    690μm
    600μm
    345μm
    -
    -
    ROHS3 Compliant
    -
    YES
    -
    -
    -
    12V
    2.1A
    0.092Ohm
    -
    12V
    -
    CSD16410Q5A vs CSD13380F3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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