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CSD16325Q5

Texas Instruments CSD16325Q5

Part Number:
CSD16325Q5
Manufacturer:
Texas Instruments
Ventron No:
2482004-CSD16325Q5
Description:
25-V, N channel NexFET? power MOSFET, single SON 5 mm x 6 mm, 2.2 mOhm
ECAD Model:
Datasheet:
csd16325q5

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Specifications
Texas Instruments CSD16325Q5 technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD16325Q5.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    6 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Cut Tape (CT)
  • Series
    NexFET™
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    AVALANCHE RATED
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Peak Reflow Temperature (Cel)
    260
  • Base Part Number
    CSD16325
  • Pin Count
    8
  • Number of Elements
    1
  • Power Dissipation-Max
    3.1W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    3.1W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    10.5 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    2m Ω @ 30A, 8V
  • Vgs(th) (Max) @ Id
    1.4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4000pF @ 12.5V
  • Current - Continuous Drain (Id) @ 25°C
    33A Ta 100A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    25nC @ 4.5V
  • Rise Time
    16ns
  • Drive Voltage (Max Rds On,Min Rds On)
    3V 8V
  • Vgs (Max)
    10V, -8V
  • Fall Time (Typ)
    12 ns
  • Turn-Off Delay Time
    32 ns
  • Continuous Drain Current (ID)
    100A
  • Threshold Voltage
    1.1V
  • Gate to Source Voltage (Vgs)
    10V
  • Drain Current-Max (Abs) (ID)
    33A
  • Drain-source On Resistance-Max
    0.0027Ohm
  • Dual Supply Voltage
    25V
  • Avalanche Energy Rating (Eas)
    500 mJ
  • Nominal Vgs
    1.1 V
  • Height
    1.05mm
  • Length
    5mm
  • Width
    6mm
  • Thickness
    1mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Contains Lead
Description
CSD16325Q5 Description
CSD16325Q5 is a 25V N channel NexFET? power MOSFET. The MOSFET CSD16325Q5 can be applied in Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems, and Optimized for Synchronous FET Applications due to the following features. The CSD16325Q5 has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.

CSD16325Q5 Features
Optimized for 5V Gate Drive
Ultralow Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm × 6-mm Plastic Package

CSD16325Q5 Applications
Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems
Optimized for Synchronous FET Applications
CSD16325Q5 More Descriptions
25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.2 mOhm 8-VSON-CLIP -55 to 150
Trans MOSFET N-CH 25V 33A 8-Pin SON EP T/R / MOSFET N-CH 25V 5X6 100A 8SON
the nexfet power mosfet has been designed to minimize losses in power conversion applications and optimized for 5v gate drive applications.
Product Comparison
The three parts on the right have similar specifications to CSD16325Q5.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Base Part Number
    Pin Count
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Dual Supply Voltage
    Avalanche Energy Rating (Eas)
    Nominal Vgs
    Height
    Length
    Width
    Thickness
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Contact Plating
    Terminal Form
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Drain to Source Voltage (Vdss)
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Feedback Cap-Max (Crss)
    Surface Mount
    View Compare
  • CSD16325Q5
    CSD16325Q5
    Texas Instruments
    ACTIVE (Last Updated: 4 days ago)
    6 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    NexFET™
    e3
    yes
    Active
    1 (Unlimited)
    5
    SMD/SMT
    EAR99
    Matte Tin (Sn)
    AVALANCHE RATED
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    260
    CSD16325
    8
    1
    3.1W Ta
    Single
    ENHANCEMENT MODE
    3.1W
    DRAIN
    10.5 ns
    N-Channel
    SWITCHING
    2m Ω @ 30A, 8V
    1.4V @ 250μA
    4000pF @ 12.5V
    33A Ta 100A Tc
    25nC @ 4.5V
    16ns
    3V 8V
    10V, -8V
    12 ns
    32 ns
    100A
    1.1V
    10V
    33A
    0.0027Ohm
    25V
    500 mJ
    1.1 V
    1.05mm
    5mm
    6mm
    1mm
    No SVHC
    No
    ROHS3 Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • CSD17576Q5BT
    CSD17576Q5BT
    Texas Instruments
    ACTIVE (Last Updated: 5 days ago)
    6 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e4
    yes
    Active
    1 (Unlimited)
    5
    -
    EAR99
    -
    AVALANCHE RATED
    -
    MOSFET (Metal Oxide)
    DUAL
    260
    CSD17576
    -
    1
    3.1W Ta 125W Tc
    Single
    ENHANCEMENT MODE
    3.1W
    DRAIN
    5 ns
    N-Channel
    SWITCHING
    2m Ω @ 25A, 10V
    1.8V @ 250μA
    4430pF @ 15V
    100A Ta
    32nC @ 4.5V
    16ns
    4.5V 10V
    ±20V
    3 ns
    23 ns
    100A
    -
    20V
    30A
    0.0029Ohm
    -
    -
    -
    -
    5mm
    6mm
    950μm
    -
    -
    ROHS3 Compliant
    Contains Lead
    Gold
    NO LEAD
    not_compliant
    NOT SPECIFIED
    30V
    400A
    30V
    -
    -
    CSD16325Q5 vs CSD17576Q5BT
  • CSD16570Q5B
    CSD16570Q5B
    Texas Instruments
    ACTIVE (Last Updated: 1 day ago)
    12 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e3
    yes
    Active
    1 (Unlimited)
    5
    -
    EAR99
    Matte Tin (Sn)
    AVALANCHE RATED
    -
    MOSFET (Metal Oxide)
    DUAL
    260
    CSD16570
    -
    1
    3.2W Ta 195W Tc
    Single
    ENHANCEMENT MODE
    -
    DRAIN
    5 ns
    N-Channel
    -
    0.59m Ω @ 50A, 10V
    1.9V @ 250μA
    14000pF @ 12V
    100A Ta
    250nC @ 10V
    43ns
    4.5V 10V
    ±20V
    72 ns
    156 ns
    100A
    -
    20V
    59A
    -
    -
    -
    -
    -
    5mm
    6mm
    950μm
    -
    -
    ROHS3 Compliant
    Contains Lead
    Gold
    NO LEAD
    not_compliant
    NOT SPECIFIED
    25V
    400A
    25V
    1290 pF
    -
    CSD16325Q5 vs CSD16570Q5B
  • CSD13380F3
    CSD13380F3
    Texas Instruments
    ACTIVE (Last Updated: 2 days ago)
    6 Weeks
    -
    Surface Mount
    3-SMD, No Lead
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    -
    yes
    Active
    1 (Unlimited)
    3
    -
    EAR99
    -
    -
    -
    MOSFET (Metal Oxide)
    BOTTOM
    -
    CSD13380
    -
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    -
    -
    -
    N-Channel
    SWITCHING
    76m Ω @ 400mA, 4.5V
    1.3V @ 250μA
    156pF @ 6V
    3.6A Ta
    1.2nC @ 4.5V
    -
    1.8V 4.5V
    8V
    -
    -
    -
    -
    -
    2.1A
    0.092Ohm
    -
    -
    -
    -
    690μm
    600μm
    345μm
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    12V
    -
    12V
    12.5 pF
    YES
    CSD16325Q5 vs CSD13380F3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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