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CSD16322Q5C

Texas Instruments CSD16322Q5C

Part Number:
CSD16322Q5C
Manufacturer:
Texas Instruments
Ventron No:
2483797-CSD16322Q5C
Description:
MOSFET N-CH 25V 97A 8SON
ECAD Model:
Datasheet:
CSD16322Q5C

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Specifications
Texas Instruments CSD16322Q5C technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD16322Q5C.
  • Lifecycle Status
    NRND (Last Updated: 4 weeks ago)
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    NexFET™
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Additional Feature
    AVALANCHE RATED
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    NO LEAD
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    CSD16322
  • Pin Count
    8
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    3.1W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    3.1W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    6.1 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    5m Ω @ 20A, 8V
  • Vgs(th) (Max) @ Id
    1.4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1365pF @ 12.5V
  • Current - Continuous Drain (Id) @ 25°C
    21A Ta 97A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    9.7nC @ 4.5V
  • Rise Time
    10.7ns
  • Drain to Source Voltage (Vdss)
    25V
  • Drive Voltage (Max Rds On,Min Rds On)
    3V 8V
  • Vgs (Max)
    10V, -8V
  • Fall Time (Typ)
    3.7 ns
  • Turn-Off Delay Time
    12.3 ns
  • Continuous Drain Current (ID)
    97A
  • Threshold Voltage
    1.1V
  • Gate to Source Voltage (Vgs)
    10V
  • Drain-source On Resistance-Max
    0.007Ohm
  • DS Breakdown Voltage-Min
    25V
  • Nominal Vgs
    1.1 V
  • Height
    1.05mm
  • Length
    5mm
  • Width
    6mm
  • Thickness
    1mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Contains Lead
Description
CSD16322Q5C   Description    The NexFET Power MOSFET is designed to minimize loss in power conversion applications and is optimized for 5V gate drive applications.  
CSD16322Q5C    FEATURES
DualCoolM Package SON 5x6mm Optimized for Two Sided Cooling Optimized for 5V Gate Drive Ultralow Qg and Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating RoHS Compliant and Halogen Free
CSD16322Q5C     APPLICATIONS
Point-of-Load Synchronous Buck in Networking,Telecomand Computing Systems Optimized for Synchronous or Control FET Applications  
CSD16322Q5C More Descriptions
DualCool™ N-Channel NexFET™ Power MOSFET 8-VSON-CLIP 0 to 0
Trans MOSFET N-CH 25V 21A 8-Pin VSON-CLIP EP T/R
French Electronic Distributor since 1988
Product Comparison
The three parts on the right have similar specifications to CSD16322Q5C.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Qualification Status
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Nominal Vgs
    Height
    Length
    Width
    Thickness
    REACH SVHC
    RoHS Status
    Lead Free
    Factory Lead Time
    Surface Mount
    Pbfree Code
    Terminal Finish
    Drain Current-Max (Abs) (ID)
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Feedback Cap-Max (Crss)
    View Compare
  • CSD16322Q5C
    CSD16322Q5C
    Texas Instruments
    NRND (Last Updated: 4 weeks ago)
    Tin
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e3
    Obsolete
    1 (Unlimited)
    5
    EAR99
    AVALANCHE RATED
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    260
    not_compliant
    NOT SPECIFIED
    CSD16322
    8
    Not Qualified
    1
    3.1W Ta
    Single
    ENHANCEMENT MODE
    3.1W
    DRAIN
    6.1 ns
    N-Channel
    SWITCHING
    5m Ω @ 20A, 8V
    1.4V @ 250μA
    1365pF @ 12.5V
    21A Ta 97A Tc
    9.7nC @ 4.5V
    10.7ns
    25V
    3V 8V
    10V, -8V
    3.7 ns
    12.3 ns
    97A
    1.1V
    10V
    0.007Ohm
    25V
    1.1 V
    1.05mm
    5mm
    6mm
    1mm
    No SVHC
    ROHS3 Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • CSD18512Q5B
    CSD18512Q5B
    Texas Instruments
    ACTIVE (Last Updated: 1 week ago)
    -
    -
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e4
    Active
    1 (Unlimited)
    5
    EAR99
    AVALANCHE RATED
    -
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    -
    not_compliant
    -
    CSD18512
    -
    -
    1
    139W Tc
    Single
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    1.6m Ω @ 30A, 10V
    2.2V @ 250μA
    7120pF @ 20V
    211A Tc
    -
    -
    40V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    0.0023Ohm
    40V
    -
    -
    5mm
    6mm
    950μm
    -
    ROHS3 Compliant
    -
    6 Weeks
    YES
    yes
    Nickel/Palladium/Gold (Ni/Pd/Au)
    32A
    400A
    205 mJ
    333 pF
    CSD16322Q5C vs CSD18512Q5B
  • CSD17484F4
    CSD17484F4
    Texas Instruments
    ACTIVE (Last Updated: 1 day ago)
    -
    Surface Mount
    Surface Mount
    3-XFDFN
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    -
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    BOTTOM
    NO LEAD
    -
    -
    -
    CSD17484
    3
    -
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    -
    -
    3 ns
    N-Channel
    SWITCHING
    121m Ω @ 500mA, 8V
    1.1V @ 250μA
    195pF @ 15V
    3A Ta
    1.2nC @ 4.5V
    1ns
    30V
    1.8V 8V
    -
    4 ns
    11 ns
    3A
    -
    12V
    0.27Ohm
    -
    -
    -
    1.035mm
    635μm
    200μm
    -
    ROHS3 Compliant
    Lead Free
    6 Weeks
    -
    yes
    -
    3A
    -
    -
    2.9 pF
    CSD16322Q5C vs CSD17484F4
  • CSD13380F3
    CSD13380F3
    Texas Instruments
    ACTIVE (Last Updated: 2 days ago)
    -
    -
    Surface Mount
    3-SMD, No Lead
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    -
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    BOTTOM
    -
    -
    -
    -
    CSD13380
    -
    -
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    -
    -
    -
    N-Channel
    SWITCHING
    76m Ω @ 400mA, 4.5V
    1.3V @ 250μA
    156pF @ 6V
    3.6A Ta
    1.2nC @ 4.5V
    -
    12V
    1.8V 4.5V
    8V
    -
    -
    -
    -
    -
    0.092Ohm
    12V
    -
    -
    690μm
    600μm
    345μm
    -
    ROHS3 Compliant
    -
    6 Weeks
    YES
    yes
    -
    2.1A
    -
    -
    12.5 pF
    CSD16322Q5C vs CSD13380F3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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