CSD13381F4T

Texas Instruments CSD13381F4T

Part Number:
CSD13381F4T
Manufacturer:
Texas Instruments
Ventron No:
2478983-CSD13381F4T
Description:
12-V, N channel NexFET? power MOSFET, single LGA 1 mm x 0.6mm, 180 mOhm, gate ESD protection
ECAD Model:
Datasheet:
csd13381f4

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Specifications
Texas Instruments CSD13381F4T technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD13381F4T.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    6 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    3-XFDFN
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    FemtoFET™
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    BOTTOM
  • Terminal Form
    NO LEAD
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    CSD13381
  • Number of Elements
    1
  • Power Dissipation-Max
    500mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    500mW
  • Case Connection
    DRAIN
  • Turn On Delay Time
    3.7 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    180m Ω @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id
    1.1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    200pF @ 6V
  • Current - Continuous Drain (Id) @ 25°C
    2.1A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    1.4nC @ 4.5V
  • Rise Time
    1.5ns
  • Drive Voltage (Max Rds On,Min Rds On)
    1.8V 4.5V
  • Fall Time (Typ)
    3.8 ns
  • Turn-Off Delay Time
    11 ns
  • Continuous Drain Current (ID)
    2.1A
  • Threshold Voltage
    850mV
  • Gate to Source Voltage (Vgs)
    8V
  • Drain-source On Resistance-Max
    0.4Ohm
  • Drain to Source Breakdown Voltage
    12V
  • Pulsed Drain Current-Max (IDM)
    7A
  • Height
    350μm
  • Length
    1.035mm
  • Width
    635μm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
CSD13381F4T Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 200pF @ 6V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 2.1A amps.In this device, the drain-source breakdown voltage is 12V and VGS=12V, so the drain-source breakdown voltage is 12V in this case.It is [11 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 7A.A turn-on delay time of 3.7 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 850mV.A device like this reduces its overall power consumption when it uses drive voltage (1.8V 4.5V).

CSD13381F4T Features
a continuous drain current (ID) of 2.1A
a drain-to-source breakdown voltage of 12V voltage
the turn-off delay time is 11 ns
based on its rated peak drain current 7A.
a threshold voltage of 850mV


CSD13381F4T Applications
There are a lot of Texas Instruments
CSD13381F4T applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
CSD13381F4T More Descriptions
12-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 180 mOhm, gate ESD protection
Trans MOSFET N-CH 12V 2.1A 3-Pin Case 0402 T/R
Mosfet, N-Channel, 12V, 2.1A, Lga-3; Transistor Polarity:N Channel; Continuous Drain Current Id:2.1A; Drain Source Voltage Vds:12V; On Resistance Rds(On):0.14Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:850Mv; Power Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD13381F4T
MOSFET, N-CHANNEL, 12V, 2.1A, LGA-3; Polarité transistor: Canal N; Courant de drain Id: 2.1A; Tension Vds max..: 12V; Résistance Rds(on): 0.14ohm; Tension, mesure Rds: 4.5V; Tension de seuil Vgs: 850mV; Dissipation de puissanc
Product Comparison
The three parts on the right have similar specifications to CSD13381F4T.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Contact Plating
    JESD-609 Code
    Additional Feature
    Reach Compliance Code
    Drain to Source Voltage (Vdss)
    Vgs (Max)
    Drain Current-Max (Abs) (ID)
    DS Breakdown Voltage-Min
    Thickness
    Surface Mount
    Terminal Finish
    Avalanche Energy Rating (Eas)
    Feedback Cap-Max (Crss)
    Pin Count
    View Compare
  • CSD13381F4T
    CSD13381F4T
    ACTIVE (Last Updated: 3 days ago)
    6 Weeks
    Surface Mount
    Surface Mount
    3-XFDFN
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    MOSFET (Metal Oxide)
    BOTTOM
    NO LEAD
    260
    NOT SPECIFIED
    CSD13381
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    500mW
    DRAIN
    3.7 ns
    N-Channel
    SWITCHING
    180m Ω @ 500mA, 4.5V
    1.1V @ 250μA
    200pF @ 6V
    2.1A Ta
    1.4nC @ 4.5V
    1.5ns
    1.8V 4.5V
    3.8 ns
    11 ns
    2.1A
    850mV
    8V
    0.4Ohm
    12V
    7A
    350μm
    1.035mm
    635μm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • CSD17576Q5BT
    ACTIVE (Last Updated: 5 days ago)
    6 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    260
    NOT SPECIFIED
    CSD17576
    1
    3.1W Ta 125W Tc
    Single
    ENHANCEMENT MODE
    3.1W
    DRAIN
    5 ns
    N-Channel
    SWITCHING
    2m Ω @ 25A, 10V
    1.8V @ 250μA
    4430pF @ 15V
    100A Ta
    32nC @ 4.5V
    16ns
    4.5V 10V
    3 ns
    23 ns
    100A
    -
    20V
    0.0029Ohm
    -
    400A
    -
    5mm
    6mm
    -
    ROHS3 Compliant
    Contains Lead
    Gold
    e4
    AVALANCHE RATED
    not_compliant
    30V
    ±20V
    30A
    30V
    950μm
    -
    -
    -
    -
    -
  • CSD18512Q5B
    ACTIVE (Last Updated: 1 week ago)
    6 Weeks
    -
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    -
    -
    CSD18512
    1
    139W Tc
    Single
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    1.6m Ω @ 30A, 10V
    2.2V @ 250μA
    7120pF @ 20V
    211A Tc
    -
    -
    4.5V 10V
    -
    -
    -
    -
    -
    0.0023Ohm
    -
    400A
    -
    5mm
    6mm
    -
    ROHS3 Compliant
    -
    -
    e4
    AVALANCHE RATED
    not_compliant
    40V
    ±20V
    32A
    40V
    950μm
    YES
    Nickel/Palladium/Gold (Ni/Pd/Au)
    205 mJ
    333 pF
    -
  • CSD17484F4
    ACTIVE (Last Updated: 1 day ago)
    6 Weeks
    Surface Mount
    Surface Mount
    3-XFDFN
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    MOSFET (Metal Oxide)
    BOTTOM
    NO LEAD
    -
    -
    CSD17484
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    -
    -
    3 ns
    N-Channel
    SWITCHING
    121m Ω @ 500mA, 8V
    1.1V @ 250μA
    195pF @ 15V
    3A Ta
    1.2nC @ 4.5V
    1ns
    1.8V 8V
    4 ns
    11 ns
    3A
    -
    12V
    0.27Ohm
    -
    -
    -
    1.035mm
    635μm
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    30V
    -
    3A
    -
    200μm
    -
    -
    -
    2.9 pF
    3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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