Texas Instruments CSD13381F4T
- Part Number:
- CSD13381F4T
- Manufacturer:
- Texas Instruments
- Ventron No:
- 2478983-CSD13381F4T
- Description:
- 12-V, N channel NexFET? power MOSFET, single LGA 1 mm x 0.6mm, 180 mOhm, gate ESD protection
- Datasheet:
- csd13381f4
Texas Instruments CSD13381F4T technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD13381F4T.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time6 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case3-XFDFN
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesFemtoFET™
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionBOTTOM
- Terminal FormNO LEAD
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberCSD13381
- Number of Elements1
- Power Dissipation-Max500mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation500mW
- Case ConnectionDRAIN
- Turn On Delay Time3.7 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs180m Ω @ 500mA, 4.5V
- Vgs(th) (Max) @ Id1.1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds200pF @ 6V
- Current - Continuous Drain (Id) @ 25°C2.1A Ta
- Gate Charge (Qg) (Max) @ Vgs1.4nC @ 4.5V
- Rise Time1.5ns
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Fall Time (Typ)3.8 ns
- Turn-Off Delay Time11 ns
- Continuous Drain Current (ID)2.1A
- Threshold Voltage850mV
- Gate to Source Voltage (Vgs)8V
- Drain-source On Resistance-Max0.4Ohm
- Drain to Source Breakdown Voltage12V
- Pulsed Drain Current-Max (IDM)7A
- Height350μm
- Length1.035mm
- Width635μm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
CSD13381F4T Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 200pF @ 6V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 2.1A amps.In this device, the drain-source breakdown voltage is 12V and VGS=12V, so the drain-source breakdown voltage is 12V in this case.It is [11 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 7A.A turn-on delay time of 3.7 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 850mV.A device like this reduces its overall power consumption when it uses drive voltage (1.8V 4.5V).
CSD13381F4T Features
a continuous drain current (ID) of 2.1A
a drain-to-source breakdown voltage of 12V voltage
the turn-off delay time is 11 ns
based on its rated peak drain current 7A.
a threshold voltage of 850mV
CSD13381F4T Applications
There are a lot of Texas Instruments
CSD13381F4T applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 200pF @ 6V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 2.1A amps.In this device, the drain-source breakdown voltage is 12V and VGS=12V, so the drain-source breakdown voltage is 12V in this case.It is [11 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 7A.A turn-on delay time of 3.7 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 850mV.A device like this reduces its overall power consumption when it uses drive voltage (1.8V 4.5V).
CSD13381F4T Features
a continuous drain current (ID) of 2.1A
a drain-to-source breakdown voltage of 12V voltage
the turn-off delay time is 11 ns
based on its rated peak drain current 7A.
a threshold voltage of 850mV
CSD13381F4T Applications
There are a lot of Texas Instruments
CSD13381F4T applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
CSD13381F4T More Descriptions
12-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 180 mOhm, gate ESD protection
Trans MOSFET N-CH 12V 2.1A 3-Pin Case 0402 T/R
Mosfet, N-Channel, 12V, 2.1A, Lga-3; Transistor Polarity:N Channel; Continuous Drain Current Id:2.1A; Drain Source Voltage Vds:12V; On Resistance Rds(On):0.14Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:850Mv; Power Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD13381F4T
MOSFET, N-CHANNEL, 12V, 2.1A, LGA-3; Polarité transistor: Canal N; Courant de drain Id: 2.1A; Tension Vds max..: 12V; Résistance Rds(on): 0.14ohm; Tension, mesure Rds: 4.5V; Tension de seuil Vgs: 850mV; Dissipation de puissanc
Trans MOSFET N-CH 12V 2.1A 3-Pin Case 0402 T/R
Mosfet, N-Channel, 12V, 2.1A, Lga-3; Transistor Polarity:N Channel; Continuous Drain Current Id:2.1A; Drain Source Voltage Vds:12V; On Resistance Rds(On):0.14Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:850Mv; Power Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD13381F4T
MOSFET, N-CHANNEL, 12V, 2.1A, LGA-3; Polarité transistor: Canal N; Courant de drain Id: 2.1A; Tension Vds max..: 12V; Résistance Rds(on): 0.14ohm; Tension, mesure Rds: 4.5V; Tension de seuil Vgs: 850mV; Dissipation de puissanc
The three parts on the right have similar specifications to CSD13381F4T.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)HeightLengthWidthREACH SVHCRoHS StatusLead FreeContact PlatingJESD-609 CodeAdditional FeatureReach Compliance CodeDrain to Source Voltage (Vdss)Vgs (Max)Drain Current-Max (Abs) (ID)DS Breakdown Voltage-MinThicknessSurface MountTerminal FinishAvalanche Energy Rating (Eas)Feedback Cap-Max (Crss)Pin CountView Compare
-
CSD13381F4TACTIVE (Last Updated: 3 days ago)6 WeeksSurface MountSurface Mount3-XFDFN3SILICON-55°C~150°C TJTape & Reel (TR)FemtoFET™yesActive1 (Unlimited)3EAR99MOSFET (Metal Oxide)BOTTOMNO LEAD260NOT SPECIFIEDCSD133811500mW TaSingleENHANCEMENT MODE500mWDRAIN3.7 nsN-ChannelSWITCHING180m Ω @ 500mA, 4.5V1.1V @ 250μA200pF @ 6V2.1A Ta1.4nC @ 4.5V1.5ns1.8V 4.5V3.8 ns11 ns2.1A850mV8V0.4Ohm12V7A350μm1.035mm635μmNo SVHCROHS3 CompliantLead Free---------------
-
ACTIVE (Last Updated: 5 days ago)6 WeeksSurface MountSurface Mount8-PowerTDFN8SILICON-55°C~150°C TJTape & Reel (TR)NexFET™yesActive1 (Unlimited)5EAR99MOSFET (Metal Oxide)DUALNO LEAD260NOT SPECIFIEDCSD1757613.1W Ta 125W TcSingleENHANCEMENT MODE3.1WDRAIN5 nsN-ChannelSWITCHING2m Ω @ 25A, 10V1.8V @ 250μA4430pF @ 15V100A Ta32nC @ 4.5V16ns4.5V 10V3 ns23 ns100A-20V0.0029Ohm-400A-5mm6mm-ROHS3 CompliantContains LeadGolde4AVALANCHE RATEDnot_compliant30V±20V30A30V950μm-----
-
ACTIVE (Last Updated: 1 week ago)6 Weeks-Surface Mount8-PowerTDFN8SILICON-55°C~150°C TJTape & Reel (TR)NexFET™yesActive1 (Unlimited)5EAR99MOSFET (Metal Oxide)DUALNO LEAD--CSD185121139W TcSingleENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING1.6m Ω @ 30A, 10V2.2V @ 250μA7120pF @ 20V211A Tc--4.5V 10V-----0.0023Ohm-400A-5mm6mm-ROHS3 Compliant--e4AVALANCHE RATEDnot_compliant40V±20V32A40V950μmYESNickel/Palladium/Gold (Ni/Pd/Au)205 mJ333 pF-
-
ACTIVE (Last Updated: 1 day ago)6 WeeksSurface MountSurface Mount3-XFDFN3SILICON-55°C~150°C TJTape & Reel (TR)FemtoFET™yesActive1 (Unlimited)3EAR99MOSFET (Metal Oxide)BOTTOMNO LEAD--CSD174841500mW TaSingleENHANCEMENT MODE--3 nsN-ChannelSWITCHING121m Ω @ 500mA, 8V1.1V @ 250μA195pF @ 15V3A Ta1.2nC @ 4.5V1ns1.8V 8V4 ns11 ns3A-12V0.27Ohm---1.035mm635μm-ROHS3 CompliantLead Free----30V-3A-200μm---2.9 pF3
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
19 September 2023
Comparison Between 2N3055 vs TIP3055
Ⅰ. Overview of 2N3055Ⅱ. Overview of TIP3055Ⅲ. Pin diagram comparisonⅣ. Technical parametersⅤ. Comparison of current amplification factorsⅥ. Package comparisonⅦ. Symbol of 2N3055 and TIP3055Ⅷ. Application scenarios comparisonⅨ. Can... -
19 September 2023
STM32F303CCT6 Microcontroller: Footprint, Equivalent and Advantages
Ⅰ. What is STM32F303CCT6?Ⅱ. 3D Model and footprint of STM32F303CCT6Ⅲ. Technical parametersⅣ. Features of STM32F303CCT6Ⅴ. Package and packaging of STM32F303CCT6Ⅵ. Typical and maximum current consumptionⅦ. Advantages of STM32F303CCT6... -
20 September 2023
ATMEGA8-16PU Microcontroller: Symbol, Equivalent and Electrical Characteristics
Ⅰ. Overview of ATMEGA8-16PUⅡ. Symbol, Footprint and Pin Configuration of ATMEGA8-16PUⅢ. Technical parametersⅣ. Electrical characteristics of ATMEGA8-16PUⅤ. What is the difference between ATMEGA8-16PU and ATMEGA8-16PI?Ⅵ. I/O Memory of... -
20 September 2023
The Pinout, Advantages, and Electrical Characteristics of AO4466
Ⅰ. What is AO4466?Ⅱ. Symbol, Pinout and Footprint of AO4466Ⅲ. Technical parametersⅣ. What are the advantages of AO4466?Ⅴ. Application fields of AO4466Ⅵ. Typical electrical characteristicsⅦ. How to detect...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.