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CSD13381F4

Texas Instruments CSD13381F4

Part Number:
CSD13381F4
Manufacturer:
Texas Instruments
Ventron No:
2478558-CSD13381F4
Description:
MOSFET N-CH 12V 2.1A 3PICOSTAR
ECAD Model:
Datasheet:
csd13381f4

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Specifications
Texas Instruments CSD13381F4 technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD13381F4.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    8 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    3-XFDFN
  • Number of Pins
    3
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    NexFET™
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    BOTTOM
  • Terminal Form
    NO LEAD
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    CSD13381
  • Number of Elements
    1
  • Power Dissipation-Max
    500mW Ta
  • Element Configuration
    Single
  • Operating Mode
    0.85
  • Power Dissipation
    500mW
  • Turn On Delay Time
    3.7 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    180m Ω @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id
    1.1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    200pF @ 6V
  • Current - Continuous Drain (Id) @ 25°C
    2.1A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    1.4nC @ 4.5V
  • Rise Time
    1.5ns
  • Drive Voltage (Max Rds On,Min Rds On)
    1.8V 4.5V
  • Fall Time (Typ)
    3.8 ns
  • Turn-Off Delay Time
    11 ns
  • Continuous Drain Current (ID)
    2.1A
  • Gate to Source Voltage (Vgs)
    8V
  • Drain to Source Breakdown Voltage
    12V
  • Pulsed Drain Current-Max (IDM)
    7A
  • Length
    1.035mm
  • Width
    635μm
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
CSD13381F4  Description   This 140m Ω, 12V N-channel FemtoFET floor MOSFET technology CSD13381F4  is designed and optimized to minimize footprint in many handheld and mobile applications. This technology can replace the standard small signal MOSFET and reduce the footprint by at least 60%.

CSD13381F4  Features
? Low on-resistance ? Low Qg and Qgd ? Low threshold voltage ? Ultra-small footprint (0402 case size) – 1.0 mm × 0.6 mm ? Ultra-low profile – Maximum height: 0.36-mm ? Integrated ESD protection diode – Rated > 4-kV HBM – Rated > 2-kV CDM ? Lead and halogen free ? RoHS compliant

CSD13381F4  Applications
? Optimized for load switch applications ? Optimized for general purpose switching applications ? Single-cell battery applications ? Handheld and mobile applications     
CSD13381F4 More Descriptions
MOSFET N-CH 12V 2.1A 3PICOSTAR / Trans MOSFET N-CH 12V 2.1A 3-Pin PicoStar T/R
12-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 180 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
Small Signal Field-Effect Transistor, 2.1A I(D), 12V, 1-Element, N-Channel, Metal-oxide Semiconductor FET
Product Comparison
The three parts on the right have similar specifications to CSD13381F4.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    Series
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Length
    Width
    RoHS Status
    Lead Free
    Contact Plating
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    Additional Feature
    Reach Compliance Code
    Case Connection
    Transistor Application
    Drain to Source Voltage (Vdss)
    Vgs (Max)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Thickness
    Pin Count
    Feedback Cap-Max (Crss)
    Number of Channels
    Max Junction Temperature (Tj)
    Height
    View Compare
  • CSD13381F4
    CSD13381F4
    Texas Instruments
    ACTIVE (Last Updated: 3 days ago)
    8 Weeks
    Surface Mount
    Surface Mount
    3-XFDFN
    3
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    yes
    Active
    1 (Unlimited)
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    BOTTOM
    NO LEAD
    260
    NOT SPECIFIED
    CSD13381
    1
    500mW Ta
    Single
    0.85
    500mW
    3.7 ns
    N-Channel
    180m Ω @ 500mA, 4.5V
    1.1V @ 250μA
    200pF @ 6V
    2.1A Ta
    1.4nC @ 4.5V
    1.5ns
    1.8V 4.5V
    3.8 ns
    11 ns
    2.1A
    8V
    12V
    7A
    1.035mm
    635μm
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • CSD17576Q5BT
    CSD17576Q5BT
    Texas Instruments
    ACTIVE (Last Updated: 5 days ago)
    6 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    yes
    Active
    1 (Unlimited)
    EAR99
    -
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    260
    NOT SPECIFIED
    CSD17576
    1
    3.1W Ta 125W Tc
    Single
    ENHANCEMENT MODE
    3.1W
    5 ns
    N-Channel
    2m Ω @ 25A, 10V
    1.8V @ 250μA
    4430pF @ 15V
    100A Ta
    32nC @ 4.5V
    16ns
    4.5V 10V
    3 ns
    23 ns
    100A
    20V
    -
    400A
    5mm
    6mm
    ROHS3 Compliant
    Contains Lead
    Gold
    SILICON
    e4
    5
    AVALANCHE RATED
    not_compliant
    DRAIN
    SWITCHING
    30V
    ±20V
    30A
    0.0029Ohm
    30V
    950μm
    -
    -
    -
    -
    -
    CSD13381F4 vs CSD17576Q5BT
  • CSD17484F4
    CSD17484F4
    Texas Instruments
    ACTIVE (Last Updated: 1 day ago)
    6 Weeks
    Surface Mount
    Surface Mount
    3-XFDFN
    3
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    yes
    Active
    1 (Unlimited)
    EAR99
    -
    MOSFET (Metal Oxide)
    BOTTOM
    NO LEAD
    -
    -
    CSD17484
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    -
    3 ns
    N-Channel
    121m Ω @ 500mA, 8V
    1.1V @ 250μA
    195pF @ 15V
    3A Ta
    1.2nC @ 4.5V
    1ns
    1.8V 8V
    4 ns
    11 ns
    3A
    12V
    -
    -
    1.035mm
    635μm
    ROHS3 Compliant
    Lead Free
    -
    SILICON
    -
    3
    -
    -
    -
    SWITCHING
    30V
    -
    3A
    0.27Ohm
    -
    200μm
    3
    2.9 pF
    -
    -
    -
    CSD13381F4 vs CSD17484F4
  • CSD17382F4
    CSD17382F4
    Texas Instruments
    ACTIVE (Last Updated: 1 day ago)
    6 Weeks
    Surface Mount
    Surface Mount
    3-XFDFN
    3
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    yes
    Active
    1 (Unlimited)
    EAR99
    -
    MOSFET (Metal Oxide)
    BOTTOM
    NO LEAD
    -
    -
    CSD17382
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    500mW
    59 ns
    N-Channel
    64m Ω @ 500mA, 8V
    1.2V @ 250μA
    347pF @ 15V
    2.3A Ta
    2.7nC @ 4.5V
    -
    1.8V 8V
    -
    279 ns
    2.3A
    10V
    -
    -
    1.035mm
    635μm
    ROHS3 Compliant
    Lead Free
    -
    SILICON
    -
    3
    -
    -
    DRAIN
    SWITCHING
    30V
    -
    -
    -
    -
    -
    -
    -
    1
    150°C
    350μm
    CSD13381F4 vs CSD17382F4
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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