2N7002A-7

Diodes Incorporated 2N7002A-7

Part Number:
2N7002A-7
Manufacturer:
Diodes Incorporated
Ventron No:
2483758-2N7002A-7
Description:
MOSFET N-CH 60V 0.18A SOT23
ECAD Model:
Datasheet:
2N7002A-7

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Specifications
Diodes Incorporated 2N7002A-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated 2N7002A-7.
  • Factory Lead Time
    14 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2009
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    6Ohm
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    FET General Purpose Powers
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    370mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    540mW
  • Turn On Delay Time
    10 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    6 Ω @ 115mA, 5V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    23pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    180mA Ta
  • Drive Voltage (Max Rds On,Min Rds On)
    5V 10V
  • Vgs (Max)
    ±20V
  • Turn-Off Delay Time
    33 ns
  • Continuous Drain Current (ID)
    220mA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    60V
  • Height
    1mm
  • Length
    2.9mm
  • Width
    1.3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
2N7002A-7 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 23pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.As a result of its turn-off delay time, which is 33 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (5V 10V).

2N7002A-7 Features
a continuous drain current (ID) of 220mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 33 ns


2N7002A-7 Applications
There are a lot of Diodes Incorporated
2N7002A-7 applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
2N7002A-7 More Descriptions
N-Channel 60 V 60 Ohm Surface Mount Enhancement Mode Mosfet - SOT-23-3
Trans MOSFET N-CH 60V 0.22A Automotive 3-Pin SOT-23 T/R
N-Channel Enhancement MOSFET SOT-23 | Diodes Inc 2N7002A-7
MOSFET, N-CH, 60V, 0.18A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:180mA; Source Voltage Vds:60V; On Resistance
MOSFET, N-CH, 60V, 0.18A, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 180mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 3.5ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 370mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Product Comparison
The three parts on the right have similar specifications to 2N7002A-7.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Drain to Source Voltage (Vdss)
    Continuous Drain Current (Id) @ 25°C
    Power Dissipation-Max (Ta=25°C)
    Termination
    Terminal Finish
    Voltage
    Current
    Threshold Voltage
    Dual Supply Voltage
    Nominal Vgs
    Feedback Cap-Max (Crss)
    Manufacturer Package Identifier
    Gate Charge (Qg) (Max) @ Vgs
    Drain Current-Max (Abs) (ID)
    View Compare
  • 2N7002A-7
    2N7002A-7
    14 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2009
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    6Ohm
    HIGH RELIABILITY
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    3
    1
    1
    370mW Ta
    Single
    ENHANCEMENT MODE
    540mW
    10 ns
    N-Channel
    SWITCHING
    6 Ω @ 115mA, 5V
    2V @ 250μA
    23pF @ 25V
    180mA Ta
    5V 10V
    ±20V
    33 ns
    220mA
    20V
    60V
    1mm
    2.9mm
    1.3mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • 2N7002W
    -
    -
    -
    -
    SOT-323(SC-70)
    -
    -
    -
    -
    Tape & Reel (TR)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    N Channel
    -
    5Ω @ 500mA,10V
    2.5V @ 250uA
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    60V
    115mA
    200mW
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • 2N7002-E3
    -
    -
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    1.437803g
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    e3
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    7.5Ohm
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    -
    3
    1
    1
    200mW Ta
    Single
    ENHANCEMENT MODE
    200mW
    7 ns
    N-Channel
    -
    7.5 Ω @ 500mA, 10V
    2.5V @ 250μA
    50pF @ 25V
    115mA Ta
    5V 10V
    ±20V
    11 ns
    115mA
    20V
    60V
    1.02mm
    3.04mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    SMD/SMT
    Matte Tin (Sn)
    60V
    3A
    2.1V
    60V
    2 V
    5 pF
    -
    -
    -
  • 2N7002E-7-F
    19 Weeks
    -
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2013
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    4Ohm
    LOW THRESHOLD
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    3
    1
    1
    370mW Ta
    Single
    ENHANCEMENT MODE
    540mW
    7 ns
    N-Channel
    SWITCHING
    3 Ω @ 250mA, 10V
    2.5V @ 250μA
    50pF @ 25V
    250mA Ta
    4.5V 10V
    ±20V
    11 ns
    250mA
    20V
    60V
    1mm
    2.9mm
    1.3mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    Matte Tin (Sn)
    -
    -
    -
    -
    -
    5 pF
    2N7002E-7-F
    0.22nC @ 4.5V
    0.24A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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