Diodes Incorporated 2N7002A-7
- Part Number:
- 2N7002A-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2483758-2N7002A-7
- Description:
- MOSFET N-CH 60V 0.18A SOT23
- Datasheet:
- 2N7002A-7
Diodes Incorporated 2N7002A-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated 2N7002A-7.
- Factory Lead Time14 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance6Ohm
- Additional FeatureHIGH RELIABILITY
- SubcategoryFET General Purpose Powers
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max370mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation540mW
- Turn On Delay Time10 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs6 Ω @ 115mA, 5V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds23pF @ 25V
- Current - Continuous Drain (Id) @ 25°C180mA Ta
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Vgs (Max)±20V
- Turn-Off Delay Time33 ns
- Continuous Drain Current (ID)220mA
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage60V
- Height1mm
- Length2.9mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2N7002A-7 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 23pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.As a result of its turn-off delay time, which is 33 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (5V 10V).
2N7002A-7 Features
a continuous drain current (ID) of 220mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 33 ns
2N7002A-7 Applications
There are a lot of Diodes Incorporated
2N7002A-7 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 23pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.As a result of its turn-off delay time, which is 33 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (5V 10V).
2N7002A-7 Features
a continuous drain current (ID) of 220mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 33 ns
2N7002A-7 Applications
There are a lot of Diodes Incorporated
2N7002A-7 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
2N7002A-7 More Descriptions
N-Channel 60 V 60 Ohm Surface Mount Enhancement Mode Mosfet - SOT-23-3
Trans MOSFET N-CH 60V 0.22A Automotive 3-Pin SOT-23 T/R
N-Channel Enhancement MOSFET SOT-23 | Diodes Inc 2N7002A-7
MOSFET, N-CH, 60V, 0.18A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:180mA; Source Voltage Vds:60V; On Resistance
MOSFET, N-CH, 60V, 0.18A, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 180mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 3.5ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 370mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Trans MOSFET N-CH 60V 0.22A Automotive 3-Pin SOT-23 T/R
N-Channel Enhancement MOSFET SOT-23 | Diodes Inc 2N7002A-7
MOSFET, N-CH, 60V, 0.18A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:180mA; Source Voltage Vds:60V; On Resistance
MOSFET, N-CH, 60V, 0.18A, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 180mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 3.5ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 370mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
The three parts on the right have similar specifications to 2N7002A-7.
-
ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeDrain to Source Voltage (Vdss)Continuous Drain Current (Id) @ 25°CPower Dissipation-Max (Ta=25°C)TerminationTerminal FinishVoltageCurrentThreshold VoltageDual Supply VoltageNominal VgsFeedback Cap-Max (Crss)Manufacturer Package IdentifierGate Charge (Qg) (Max) @ VgsDrain Current-Max (Abs) (ID)View Compare
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2N7002A-714 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2009e3yesActive1 (Unlimited)3EAR996OhmHIGH RELIABILITYFET General Purpose PowersMOSFET (Metal Oxide)DUALGULL WING26040311370mW TaSingleENHANCEMENT MODE540mW10 nsN-ChannelSWITCHING6 Ω @ 115mA, 5V2V @ 250μA23pF @ 25V180mA Ta5V 10V±20V33 ns220mA20V60V1mm2.9mm1.3mmNo SVHCNoROHS3 CompliantLead Free---------------
-
----SOT-323(SC-70)----Tape & Reel (TR)-----------------------N Channel-5Ω @ 500mA,10V2.5V @ 250uA-------------RoHS Compliant-60V115mA200mW-----------
-
--Surface MountSurface MountTO-236-3, SC-59, SOT-23-331.437803gSILICON-55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)3EAR997.5Ohm-FET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING--311200mW TaSingleENHANCEMENT MODE200mW7 nsN-Channel-7.5 Ω @ 500mA, 10V2.5V @ 250μA50pF @ 25V115mA Ta5V 10V±20V11 ns115mA20V60V1.02mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead Free---SMD/SMTMatte Tin (Sn)60V3A2.1V60V2 V5 pF---
-
19 Weeks-Surface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2013e3yesActive1 (Unlimited)3EAR994OhmLOW THRESHOLDFET General Purpose PowersMOSFET (Metal Oxide)DUALGULL WING26040311370mW TaSingleENHANCEMENT MODE540mW7 nsN-ChannelSWITCHING3 Ω @ 250mA, 10V2.5V @ 250μA50pF @ 25V250mA Ta4.5V 10V±20V11 ns250mA20V60V1mm2.9mm1.3mmNo SVHCNoROHS3 CompliantLead Free----Matte Tin (Sn)-----5 pF2N7002E-7-F0.22nC @ 4.5V0.24A
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