Diodes Incorporated 2N7002E-7-F
- Part Number:
- 2N7002E-7-F
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3070118-2N7002E-7-F
- Description:
- MOSFET N-CH 60V 0.25A SOT23-3
- Datasheet:
- 2N7002E-7-F
Diodes Incorporated 2N7002E-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated 2N7002E-7-F.
- Factory Lead Time19 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Manufacturer Package Identifier2N7002E-7-F
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance4Ohm
- Terminal FinishMatte Tin (Sn)
- Additional FeatureLOW THRESHOLD
- SubcategoryFET General Purpose Powers
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max370mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation540mW
- Turn On Delay Time7 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs3 Ω @ 250mA, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds50pF @ 25V
- Current - Continuous Drain (Id) @ 25°C250mA Ta
- Gate Charge (Qg) (Max) @ Vgs0.22nC @ 4.5V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Turn-Off Delay Time11 ns
- Continuous Drain Current (ID)250mA
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)0.24A
- Drain to Source Breakdown Voltage60V
- Feedback Cap-Max (Crss)5 pF
- Height1mm
- Length2.9mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2N7002E-7-F Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 50pF @ 25V.This device conducts a continuous drain current (ID) of 250mA, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.24A.When the device is turned off, a turn-off delay time of 11 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 7 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
2N7002E-7-F Features
a continuous drain current (ID) of 250mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 11 ns
2N7002E-7-F Applications
There are a lot of Diodes Incorporated
2N7002E-7-F applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 50pF @ 25V.This device conducts a continuous drain current (ID) of 250mA, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.24A.When the device is turned off, a turn-off delay time of 11 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 7 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
2N7002E-7-F Features
a continuous drain current (ID) of 250mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 11 ns
2N7002E-7-F Applications
There are a lot of Diodes Incorporated
2N7002E-7-F applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
2N7002E-7-F More Descriptions
Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R / MOSFET N-CH 60V 0.25A SOT23-3
N-Channel 60 V 4 Ohm MosFet Surface Mount - SOT-23-3
Mosfet, N-Ch, 60V, 0.25A, Sot-23 Rohs Compliant: Yes |Diodes Inc. 2N7002E-7-F
N-Channel 60 V 4 Ohm MosFet Surface Mount - SOT-23-3
Mosfet, N-Ch, 60V, 0.25A, Sot-23 Rohs Compliant: Yes |Diodes Inc. 2N7002E-7-F
The three parts on the right have similar specifications to 2N7002E-7-F.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialManufacturer Package IdentifierOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageFeedback Cap-Max (Crss)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeContact PlatingTerminationVoltage - Rated DCCurrent RatingThreshold VoltageDual Supply VoltageNominal VgsSurface MountReach Compliance CodeJESD-30 CodeQualification StatusConfigurationDrain to Source Voltage (Vdss)Drain-source On Resistance-MaxDS Breakdown Voltage-MinSupplier Device PackageBase Part NumberView Compare
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2N7002E-7-F19 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON2N7002E-7-F-55°C~150°C TJTape & Reel (TR)2013e3yesActive1 (Unlimited)3EAR994OhmMatte Tin (Sn)LOW THRESHOLDFET General Purpose PowersMOSFET (Metal Oxide)DUALGULL WING26040311370mW TaSingleENHANCEMENT MODE540mW7 nsN-ChannelSWITCHING3 Ω @ 250mA, 10V2.5V @ 250μA50pF @ 25V250mA Ta0.22nC @ 4.5V4.5V 10V±20V11 ns250mA20V0.24A60V5 pF1mm2.9mm1.3mmNo SVHCNoROHS3 CompliantLead Free------------------
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20 WeeksSurface MountSurface MountSC-70, SOT-32336.010099mgSILICON--55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)3EAR997.5Ohm--FET General Purpose PowersMOSFET (Metal Oxide)DUALGULL WING26040311200mW TaSingleENHANCEMENT MODE200mW7 nsN-ChannelSWITCHING7.5 Ω @ 50mA, 5V2V @ 250μA50pF @ 25V115mA Ta-5V 10V±20V11 ns115mA20V-70V5 pF1mm2.2mm1.35mmNo SVHCNoROHS3 CompliantLead FreeTinSMD/SMT60V115mA2V60V2 V----------
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--Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)--SILICON--55°C~150°C TJTape & Box (TB)-e1yesObsolete1 (Unlimited)3--TIN SILVER COPPER--MOSFET (Metal Oxide)BOTTOM-2604031-350mW Tc-ENHANCEMENT MODE--N-Channel-5 Ω @ 500mA, 10V3V @ 1mA60pF @ 25V200mA Ta-4.5V 10V±20V---0.2A-5 pF-----ROHS3 Compliant--------NOunknownO-PBCY-T3COMMERCIALSINGLE WITH BUILT-IN DIODE60V5Ohm60V--
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--Surface MountTO-236-3, SC-59, SOT-23-3-----55°C~150°C TJTape & Reel (TR)2015--Obsolete1 (Unlimited)------MOSFET (Metal Oxide)-------200mW Ta----N-Channel-7.5Ohm @ 500mA, 10V2.5V @ 250μA50pF @ 25V115mA Ta-5V 10V±20V-------------------------60V--SOT-23 (TO-236AB)2N7002
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