2N7002E-7-F

Diodes Incorporated 2N7002E-7-F

Part Number:
2N7002E-7-F
Manufacturer:
Diodes Incorporated
Ventron No:
3070118-2N7002E-7-F
Description:
MOSFET N-CH 60V 0.25A SOT23-3
ECAD Model:
Datasheet:
2N7002E-7-F

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Specifications
Diodes Incorporated 2N7002E-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated 2N7002E-7-F.
  • Factory Lead Time
    19 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Manufacturer Package Identifier
    2N7002E-7-F
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2013
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    4Ohm
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    LOW THRESHOLD
  • Subcategory
    FET General Purpose Powers
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    370mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    540mW
  • Turn On Delay Time
    7 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    3 Ω @ 250mA, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    50pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    250mA Ta
  • Gate Charge (Qg) (Max) @ Vgs
    0.22nC @ 4.5V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Turn-Off Delay Time
    11 ns
  • Continuous Drain Current (ID)
    250mA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    0.24A
  • Drain to Source Breakdown Voltage
    60V
  • Feedback Cap-Max (Crss)
    5 pF
  • Height
    1mm
  • Length
    2.9mm
  • Width
    1.3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
2N7002E-7-F Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 50pF @ 25V.This device conducts a continuous drain current (ID) of 250mA, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.24A.When the device is turned off, a turn-off delay time of 11 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 7 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

2N7002E-7-F Features
a continuous drain current (ID) of 250mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 11 ns


2N7002E-7-F Applications
There are a lot of Diodes Incorporated
2N7002E-7-F applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
2N7002E-7-F More Descriptions
Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R / MOSFET N-CH 60V 0.25A SOT23-3
N-Channel 60 V 4 Ohm MosFet Surface Mount - SOT-23-3
Mosfet, N-Ch, 60V, 0.25A, Sot-23 Rohs Compliant: Yes |Diodes Inc. 2N7002E-7-F
Product Comparison
The three parts on the right have similar specifications to 2N7002E-7-F.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Manufacturer Package Identifier
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Feedback Cap-Max (Crss)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Contact Plating
    Termination
    Voltage - Rated DC
    Current Rating
    Threshold Voltage
    Dual Supply Voltage
    Nominal Vgs
    Surface Mount
    Reach Compliance Code
    JESD-30 Code
    Qualification Status
    Configuration
    Drain to Source Voltage (Vdss)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Supplier Device Package
    Base Part Number
    View Compare
  • 2N7002E-7-F
    2N7002E-7-F
    19 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    2N7002E-7-F
    -55°C~150°C TJ
    Tape & Reel (TR)
    2013
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    4Ohm
    Matte Tin (Sn)
    LOW THRESHOLD
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    3
    1
    1
    370mW Ta
    Single
    ENHANCEMENT MODE
    540mW
    7 ns
    N-Channel
    SWITCHING
    3 Ω @ 250mA, 10V
    2.5V @ 250μA
    50pF @ 25V
    250mA Ta
    0.22nC @ 4.5V
    4.5V 10V
    ±20V
    11 ns
    250mA
    20V
    0.24A
    60V
    5 pF
    1mm
    2.9mm
    1.3mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • 2N7002W-7-F
    20 Weeks
    Surface Mount
    Surface Mount
    SC-70, SOT-323
    3
    6.010099mg
    SILICON
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2008
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    7.5Ohm
    -
    -
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    3
    1
    1
    200mW Ta
    Single
    ENHANCEMENT MODE
    200mW
    7 ns
    N-Channel
    SWITCHING
    7.5 Ω @ 50mA, 5V
    2V @ 250μA
    50pF @ 25V
    115mA Ta
    -
    5V 10V
    ±20V
    11 ns
    115mA
    20V
    -
    70V
    5 pF
    1mm
    2.2mm
    1.35mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    Tin
    SMD/SMT
    60V
    115mA
    2V
    60V
    2 V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • 2N7000RLRMG
    -
    -
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    -
    -
    SILICON
    -
    -55°C~150°C TJ
    Tape & Box (TB)
    -
    e1
    yes
    Obsolete
    1 (Unlimited)
    3
    -
    -
    TIN SILVER COPPER
    -
    -
    MOSFET (Metal Oxide)
    BOTTOM
    -
    260
    40
    3
    1
    -
    350mW Tc
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    -
    5 Ω @ 500mA, 10V
    3V @ 1mA
    60pF @ 25V
    200mA Ta
    -
    4.5V 10V
    ±20V
    -
    -
    -
    0.2A
    -
    5 pF
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    NO
    unknown
    O-PBCY-T3
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    60V
    5Ohm
    60V
    -
    -
  • 2N7002_NB9G002
    -
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    200mW Ta
    -
    -
    -
    -
    N-Channel
    -
    7.5Ohm @ 500mA, 10V
    2.5V @ 250μA
    50pF @ 25V
    115mA Ta
    -
    5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    60V
    -
    -
    SOT-23 (TO-236AB)
    2N7002
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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