ON Semiconductor 2N7000RLRMG

Name: 2N7000RLRMG
Brand: ON Semiconductor
SKU: 3554525-2N7000RLRMG
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N7000RLRMG

Manufacturer:: ON Semiconductor

Ventron No:: 3554525-2N7000RLRMG

Description:: MOSFET N-CH 60V 200MA TO-92

ECAD Model:

Datasheet:: 2N7000

Specifications

ON Semiconductor 2N7000RLRMG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N7000RLRMG.

Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Box (TB)
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN SILVER COPPER
Technology
MOSFET (Metal Oxide)
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
350mW Tc
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
60pF @ 25V
Current - Continuous Drain (Id) @ 25°C
200mA Ta
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
0.2A
Drain-source On Resistance-Max
5Ohm
DS Breakdown Voltage-Min
60V
Feedback Cap-Max (Crss)
5 pF
RoHS Status
ROHS3 Compliant

Description

2N7000RLRMG Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 60pF @ 25V.A device's drain current is its maximum continuous current, and this device's drain current is 0.2A.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 60V.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

2N7000RLRMG Features
a 60V drain to source voltage (Vdss)

2N7000RLRMG Applications
There are a lot of Rochester Electronics, LLC
2N7000RLRMG applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

2N7000RLRMG More Descriptions

N-Channel MOSFET, Enhancement Mode, 60V, 200mA, 5 Ω
Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Tape and Ammo
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
MOSFET, N, 60V, TO-92; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:0.2A; Resistance, Rds On:5ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-92; Termination Type:Through Hole; Power, Pd:0.35W; Voltage, Vds Max:60V

Product Comparison

The three parts on the right have similar specifications to 2N7000RLRMG.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Feedback Cap-Max (Crss)

RoHS Status

Mount

Number of Pins

Weight

Termination

ECCN Code

Resistance

Subcategory

Terminal Form

Number of Channels

Voltage

Element Configuration

Current

Power Dissipation

Turn On Delay Time

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

Lead Free

Supplier Device Package

Published

Base Part Number

Factory Lead Time

Contact Plating

Series

Additional Feature

Case Connection

Transistor Application

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Fall Time (Typ)

Max Dual Supply Voltage

View Compare
2N7000RLRMG

ON Semiconductor

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

NO

SILICON

-55°C~150°C TJ

Tape & Box (TB)

e1

yes

Obsolete

1 (Unlimited)

3

TIN SILVER COPPER

MOSFET (Metal Oxide)

BOTTOM

260

unknown

40

3

O-PBCY-T3

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

350mW Tc

ENHANCEMENT MODE

N-Channel

5 Ω @ 500mA, 10V

3V @ 1mA

60pF @ 25V

200mA Ta

60V

4.5V 10V

±20V

0.2A

5Ohm

60V

5 pF

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
2N7002-E3

Vishay Siliconix

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

e3

-

Obsolete

1 (Unlimited)

3

Matte Tin (Sn)

MOSFET (Metal Oxide)

DUAL

-

-

-

3

-

-

1

-

200mW Ta

ENHANCEMENT MODE

N-Channel

7.5 Ω @ 500mA, 10V

2.5V @ 250μA

50pF @ 25V

115mA Ta

-

5V 10V

±20V

-

-

-

5 pF

ROHS3 Compliant

Surface Mount

3

1.437803g

SMD/SMT

EAR99

7.5Ohm

FET General Purpose Power

GULL WING

1

60V

Single

3A

200mW

7 ns

11 ns

115mA

2.1V

20V

60V

60V

2 V

1.02mm

3.04mm

1.4mm

No SVHC

No

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

2N7000RLRMG vs 2N7002-E3
2N7002_NB9G002

Fairchild/ON Semiconductor

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

200mW Ta

-

N-Channel

7.5Ohm @ 500mA, 10V

2.5V @ 250μA

50pF @ 25V

115mA Ta

60V

5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

SOT-23 (TO-236AB)

2015

2N7002

-

-

-

-

-

-

-

-

-

-

2N7000RLRMG vs 2N7002_NB9G002
2N7002BKM,315

Nexperia USA Inc.

Surface Mount

SC-101, SOT-883

YES

SILICON

150°C TJ

Tape & Reel (TR)

e3

-

Last Time Buy

1 (Unlimited)

3

-

MOSFET (Metal Oxide)

BOTTOM

-

-

-

3

-

-

1

-

360mW Ta

ENHANCEMENT MODE

N-Channel

1.6 Ω @ 500mA, 10V

2.1V @ 250μA

50pF @ 10V

450mA Ta

-

10V

±20V

0.45A

-

-

-

ROHS3 Compliant

-

3

-

-

-

-

-

-

-

-

Single

-

715mW

5 ns

12 ns

450mA

-

20V

60V

-

-

-

-

-

-

No

Lead Free

-

2010

-

20 Weeks

Tin

Automotive, AEC-Q101, TrenchMOS™

LOGIC LEVEL COMPATIBLE

DRAIN

SWITCHING

0.6nC @ 4.5V

6ns

7 ns

60V

2N7000RLRMG vs 2N7002BKM,315