2N7002-E3

Vishay Siliconix 2N7002-E3

Part Number:
2N7002-E3
Manufacturer:
Vishay Siliconix
Ventron No:
3071435-2N7002-E3
Description:
MOSFET N-CH 60V 115MA SOT23
ECAD Model:
Datasheet:
2N7002-E3

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Specifications
Vishay Siliconix 2N7002-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix 2N7002-E3.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    1.437803g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    7.5Ohm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Voltage
    60V
  • Power Dissipation-Max
    200mW Ta
  • Element Configuration
    Single
  • Current
    3A
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    200mW
  • Turn On Delay Time
    7 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    7.5 Ω @ 500mA, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    50pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    115mA Ta
  • Drive Voltage (Max Rds On,Min Rds On)
    5V 10V
  • Vgs (Max)
    ±20V
  • Turn-Off Delay Time
    11 ns
  • Continuous Drain Current (ID)
    115mA
  • Threshold Voltage
    2.1V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    60V
  • Dual Supply Voltage
    60V
  • Nominal Vgs
    2 V
  • Feedback Cap-Max (Crss)
    5 pF
  • Height
    1.02mm
  • Length
    3.04mm
  • Width
    1.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
2N7002-E3 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 50pF @ 25V.This device has a continuous drain current (ID) of [115mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 11 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 2.1V.Its overall power consumption can be reduced by using drive voltage (5V 10V).

2N7002-E3 Features
a continuous drain current (ID) of 115mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 11 ns
a threshold voltage of 2.1V


2N7002-E3 Applications
There are a lot of Vishay Siliconix
2N7002-E3 applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
2N7002-E3 More Descriptions
2N7002 Series N-Channel 60 V 7.5 Ohm 0.2 W Surface Mount Mosfet - SOT-23-3
MOSFET, N-CHANNEL 60V 7.5R, SOT23 PKG | Siliconix / Vishay 2N7002-E3
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23
MOSFET, N, TO-236; Transistor Polarity:N Channel; Continuous Drain Current Id:115mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:200mW; Transistor Case Style:TO-236; No. of Pins:3; Current Id Max:115mA; Package / Case:TO-236; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:2.1V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to 2N7002-E3.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Pin Count
    Number of Elements
    Number of Channels
    Voltage
    Power Dissipation-Max
    Element Configuration
    Current
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Nominal Vgs
    Feedback Cap-Max (Crss)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Pbfree Code
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Supplier Device Package
    Published
    Base Part Number
    Factory Lead Time
    Contact Plating
    Series
    Additional Feature
    Case Connection
    Transistor Application
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Fall Time (Typ)
    Max Dual Supply Voltage
    View Compare
  • 2N7002-E3
    2N7002-E3
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    1.437803g
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    e3
    Obsolete
    1 (Unlimited)
    3
    SMD/SMT
    EAR99
    7.5Ohm
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    3
    1
    1
    60V
    200mW Ta
    Single
    3A
    ENHANCEMENT MODE
    200mW
    7 ns
    N-Channel
    7.5 Ω @ 500mA, 10V
    2.5V @ 250μA
    50pF @ 25V
    115mA Ta
    5V 10V
    ±20V
    11 ns
    115mA
    2.1V
    20V
    60V
    60V
    2 V
    5 pF
    1.02mm
    3.04mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • 2N7000RLRMG
    -
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Box (TB)
    e1
    Obsolete
    1 (Unlimited)
    3
    -
    -
    -
    TIN SILVER COPPER
    -
    MOSFET (Metal Oxide)
    BOTTOM
    -
    3
    1
    -
    -
    350mW Tc
    -
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    5 Ω @ 500mA, 10V
    3V @ 1mA
    60pF @ 25V
    200mA Ta
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    5 pF
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    NO
    yes
    260
    unknown
    40
    O-PBCY-T3
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    60V
    0.2A
    5Ohm
    60V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • 2N7002_NB9G002
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    200mW Ta
    -
    -
    -
    -
    -
    N-Channel
    7.5Ohm @ 500mA, 10V
    2.5V @ 250μA
    50pF @ 25V
    115mA Ta
    5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    60V
    -
    -
    -
    SOT-23 (TO-236AB)
    2015
    2N7002
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • 2N7002BKM,315
    -
    Surface Mount
    SC-101, SOT-883
    3
    -
    SILICON
    150°C TJ
    Tape & Reel (TR)
    e3
    Last Time Buy
    1 (Unlimited)
    3
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    BOTTOM
    -
    3
    1
    -
    -
    360mW Ta
    Single
    -
    ENHANCEMENT MODE
    715mW
    5 ns
    N-Channel
    1.6 Ω @ 500mA, 10V
    2.1V @ 250μA
    50pF @ 10V
    450mA Ta
    10V
    ±20V
    12 ns
    450mA
    -
    20V
    60V
    -
    -
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    YES
    -
    -
    -
    -
    -
    -
    -
    -
    0.45A
    -
    -
    -
    2010
    -
    20 Weeks
    Tin
    Automotive, AEC-Q101, TrenchMOS™
    LOGIC LEVEL COMPATIBLE
    DRAIN
    SWITCHING
    0.6nC @ 4.5V
    6ns
    7 ns
    60V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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