Vishay Siliconix 2N7002-E3
- Part Number:
- 2N7002-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3071435-2N7002-E3
- Description:
- MOSFET N-CH 60V 115MA SOT23
- Datasheet:
- 2N7002-E3
Vishay Siliconix 2N7002-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix 2N7002-E3.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight1.437803g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance7.5Ohm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Pin Count3
- Number of Elements1
- Number of Channels1
- Voltage60V
- Power Dissipation-Max200mW Ta
- Element ConfigurationSingle
- Current3A
- Operating ModeENHANCEMENT MODE
- Power Dissipation200mW
- Turn On Delay Time7 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs7.5 Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds50pF @ 25V
- Current - Continuous Drain (Id) @ 25°C115mA Ta
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Vgs (Max)±20V
- Turn-Off Delay Time11 ns
- Continuous Drain Current (ID)115mA
- Threshold Voltage2.1V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage60V
- Dual Supply Voltage60V
- Nominal Vgs2 V
- Feedback Cap-Max (Crss)5 pF
- Height1.02mm
- Length3.04mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2N7002-E3 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 50pF @ 25V.This device has a continuous drain current (ID) of [115mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 11 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 2.1V.Its overall power consumption can be reduced by using drive voltage (5V 10V).
2N7002-E3 Features
a continuous drain current (ID) of 115mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 11 ns
a threshold voltage of 2.1V
2N7002-E3 Applications
There are a lot of Vishay Siliconix
2N7002-E3 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 50pF @ 25V.This device has a continuous drain current (ID) of [115mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 11 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 2.1V.Its overall power consumption can be reduced by using drive voltage (5V 10V).
2N7002-E3 Features
a continuous drain current (ID) of 115mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 11 ns
a threshold voltage of 2.1V
2N7002-E3 Applications
There are a lot of Vishay Siliconix
2N7002-E3 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
2N7002-E3 More Descriptions
2N7002 Series N-Channel 60 V 7.5 Ohm 0.2 W Surface Mount Mosfet - SOT-23-3
MOSFET, N-CHANNEL 60V 7.5R, SOT23 PKG | Siliconix / Vishay 2N7002-E3
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23
MOSFET, N, TO-236; Transistor Polarity:N Channel; Continuous Drain Current Id:115mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:200mW; Transistor Case Style:TO-236; No. of Pins:3; Current Id Max:115mA; Package / Case:TO-236; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:2.1V; Voltage Vgs Rds on Measurement:10V
MOSFET, N-CHANNEL 60V 7.5R, SOT23 PKG | Siliconix / Vishay 2N7002-E3
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23
MOSFET, N, TO-236; Transistor Polarity:N Channel; Continuous Drain Current Id:115mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:200mW; Transistor Case Style:TO-236; No. of Pins:3; Current Id Max:115mA; Package / Case:TO-236; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:2.1V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to 2N7002-E3.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPin CountNumber of ElementsNumber of ChannelsVoltagePower Dissipation-MaxElement ConfigurationCurrentOperating ModePower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageNominal VgsFeedback Cap-Max (Crss)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountPbfree CodePeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinSupplier Device PackagePublishedBase Part NumberFactory Lead TimeContact PlatingSeriesAdditional FeatureCase ConnectionTransistor ApplicationGate Charge (Qg) (Max) @ VgsRise TimeFall Time (Typ)Max Dual Supply VoltageView Compare
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2N7002-E3Surface MountSurface MountTO-236-3, SC-59, SOT-23-331.437803gSILICON-55°C~150°C TJTape & Reel (TR)e3Obsolete1 (Unlimited)3SMD/SMTEAR997.5OhmMatte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING31160V200mW TaSingle3AENHANCEMENT MODE200mW7 nsN-Channel7.5 Ω @ 500mA, 10V2.5V @ 250μA50pF @ 25V115mA Ta5V 10V±20V11 ns115mA2.1V20V60V60V2 V5 pF1.02mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead Free--------------------------
-
-Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)--SILICON-55°C~150°C TJTape & Box (TB)e1Obsolete1 (Unlimited)3---TIN SILVER COPPER-MOSFET (Metal Oxide)BOTTOM-31--350mW Tc--ENHANCEMENT MODE--N-Channel5 Ω @ 500mA, 10V3V @ 1mA60pF @ 25V200mA Ta4.5V 10V±20V-------5 pF-----ROHS3 Compliant-NOyes260unknown40O-PBCY-T3COMMERCIALSINGLE WITH BUILT-IN DIODE60V0.2A5Ohm60V-------------
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-Surface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)-Obsolete1 (Unlimited)------MOSFET (Metal Oxide)------200mW Ta-----N-Channel7.5Ohm @ 500mA, 10V2.5V @ 250μA50pF @ 25V115mA Ta5V 10V±20V-----------------------60V---SOT-23 (TO-236AB)20152N7002----------
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-Surface MountSC-101, SOT-8833-SILICON150°C TJTape & Reel (TR)e3Last Time Buy1 (Unlimited)3-----MOSFET (Metal Oxide)BOTTOM-31--360mW TaSingle-ENHANCEMENT MODE715mW5 nsN-Channel1.6 Ω @ 500mA, 10V2.1V @ 250μA50pF @ 10V450mA Ta10V±20V12 ns450mA-20V60V-------NoROHS3 CompliantLead FreeYES--------0.45A---2010-20 WeeksTinAutomotive, AEC-Q101, TrenchMOS™LOGIC LEVEL COMPATIBLEDRAINSWITCHING0.6nC @ 4.5V6ns7 ns60V
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