Diodes Incorporated 2N7002W-7-F
- Part Number:
- 2N7002W-7-F
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3813650-2N7002W-7-F
- Description:
- MOSFET N-CH 60V 115MA SOT323
- Datasheet:
- 2N7002W-7-F
Diodes Incorporated 2N7002W-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated 2N7002W-7-F.
- Factory Lead Time20 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Number of Pins3
- Weight6.010099mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance7.5Ohm
- SubcategoryFET General Purpose Powers
- Voltage - Rated DC60V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating115mA
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max200mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation200mW
- Turn On Delay Time7 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs7.5 Ω @ 50mA, 5V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds50pF @ 25V
- Current - Continuous Drain (Id) @ 25°C115mA Ta
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Vgs (Max)±20V
- Turn-Off Delay Time11 ns
- Continuous Drain Current (ID)115mA
- Threshold Voltage2V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage70V
- Dual Supply Voltage60V
- Nominal Vgs2 V
- Feedback Cap-Max (Crss)5 pF
- Height1mm
- Length2.2mm
- Width1.35mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2N7002W-7-F Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 50pF @ 25V.This device conducts a continuous drain current (ID) of 115mA, which is the maximum continuous current transistor can conduct.Using VGS=70V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 70V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 11 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 7 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 2V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 5V 10V volts (5V 10V).
2N7002W-7-F Features
a continuous drain current (ID) of 115mA
a drain-to-source breakdown voltage of 70V voltage
the turn-off delay time is 11 ns
a threshold voltage of 2V
2N7002W-7-F Applications
There are a lot of Diodes Incorporated
2N7002W-7-F applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 50pF @ 25V.This device conducts a continuous drain current (ID) of 115mA, which is the maximum continuous current transistor can conduct.Using VGS=70V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 70V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 11 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 7 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 2V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 5V 10V volts (5V 10V).
2N7002W-7-F Features
a continuous drain current (ID) of 115mA
a drain-to-source breakdown voltage of 70V voltage
the turn-off delay time is 11 ns
a threshold voltage of 2V
2N7002W-7-F Applications
There are a lot of Diodes Incorporated
2N7002W-7-F applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
2N7002W-7-F More Descriptions
Trans MOSFET N-CH 60V 0.115A Automotive 3-Pin SOT-323 T/R
N-Channel 60 V 7.5 Ohm Surface Mount Enhancement Mode Transistor SOT-323
MOSFET Operating temperature: -55...150 °C Housing type: SOT-323 Polarity: N Variants: N-Channel, Enh. Power dissipation: 0.2 W
N-Channel 60 V 7.5 Ohm Surface Mount Enhancement Mode Transistor SOT-323
MOSFET Operating temperature: -55...150 °C Housing type: SOT-323 Polarity: N Variants: N-Channel, Enh. Power dissipation: 0.2 W
The three parts on the right have similar specifications to 2N7002W-7-F.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageNominal VgsFeedback Cap-Max (Crss)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageBase Part NumberDrain to Source Voltage (Vdss)Surface MountSeriesAdditional FeatureCase ConnectionGate Charge (Qg) (Max) @ VgsRise TimeFall Time (Typ)Max Dual Supply VoltageDrain Current-Max (Abs) (ID)Manufacturer Package IdentifierTerminal FinishView Compare
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2N7002W-7-F20 WeeksTinSurface MountSurface MountSC-70, SOT-32336.010099mgSILICON-55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)3SMD/SMTEAR997.5OhmFET General Purpose Powers60VMOSFET (Metal Oxide)DUALGULL WING260115mA40311200mW TaSingleENHANCEMENT MODE200mW7 nsN-ChannelSWITCHING7.5 Ω @ 50mA, 5V2V @ 250μA50pF @ 25V115mA Ta5V 10V±20V11 ns115mA2V20V70V60V2 V5 pF1mm2.2mm1.35mmNo SVHCNoROHS3 CompliantLead Free---------------
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---Surface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)2015--Obsolete1 (Unlimited)------MOSFET (Metal Oxide)--------200mW Ta----N-Channel-7.5Ohm @ 500mA, 10V2.5V @ 250μA50pF @ 25V115mA Ta5V 10V±20V---------------SOT-23 (TO-236AB)2N700260V-----------
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20 WeeksTin-Surface MountSC-101, SOT-8833-SILICON150°C TJTape & Reel (TR)2010e3-Last Time Buy1 (Unlimited)3-----MOSFET (Metal Oxide)BOTTOM----31-360mW TaSingleENHANCEMENT MODE715mW5 nsN-ChannelSWITCHING1.6 Ω @ 500mA, 10V2.1V @ 250μA50pF @ 10V450mA Ta10V±20V12 ns450mA-20V60V-------NoROHS3 CompliantLead Free---YESAutomotive, AEC-Q101, TrenchMOS™LOGIC LEVEL COMPATIBLEDRAIN0.6nC @ 4.5V6ns7 ns60V0.45A--
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19 Weeks-Surface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2013e3yesActive1 (Unlimited)3-EAR994OhmFET General Purpose Powers-MOSFET (Metal Oxide)DUALGULL WING260-40311370mW TaSingleENHANCEMENT MODE540mW7 nsN-ChannelSWITCHING3 Ω @ 250mA, 10V2.5V @ 250μA50pF @ 25V250mA Ta4.5V 10V±20V11 ns250mA-20V60V--5 pF1mm2.9mm1.3mmNo SVHCNoROHS3 CompliantLead Free-----LOW THRESHOLD-0.22nC @ 4.5V---0.24A2N7002E-7-FMatte Tin (Sn)
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