ON Semiconductor 2N7002ET3G

2N7002ET3G Overview
The maximum input capacitance of this device is 26.7pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 310mA.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.As shown in the table below, the drain current of this device is 0.26A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 4.8 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 1.7 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

2N7002ET3G Features
a continuous drain current (ID) of 310mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 4.8 ns


2N7002ET3G Applications
There are a lot of ON Semiconductor
2N7002ET3G applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,