Diodes Incorporated ZXTN25100BFHTA

ZXTN25100BFHTA Overview
In this device, the DC current gain is 100 @ 10mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 300mA, 3A.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.Input voltage breakdown is available at 100V volts.Product comes in the supplier's device package SOT-23-3.There is a 100V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.

ZXTN25100BFHTA Features
the DC current gain for this device is 100 @ 10mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 300mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
the supplier device package of SOT-23-3


ZXTN25100BFHTA Applications
There are a lot of Diodes Incorporated
ZXTN25100BFHTA applications of single BJT transistors.


Inverter
Interface
Driver
Muting