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ZXTN26020DMFTA

Diodes Incorporated ZXTN26020DMFTA

Part Number:
ZXTN26020DMFTA
Manufacturer:
Diodes Incorporated
Ventron No:
2846533-ZXTN26020DMFTA
Description:
TRANS NPN 20V 1.5A 3DFN
ECAD Model:
Datasheet:
ZXTN26020DMFTA

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Specifications
Diodes Incorporated ZXTN26020DMFTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXTN26020DMFTA.
  • Factory Lead Time
    15 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    3-XDFN
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Nickel/Palladium/Gold (Ni/Pd/Au)
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    1W
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    260
  • Frequency
    260MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    1W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    260MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    20V
  • Max Collector Current
    1.5A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    290 @ 500mA 2V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    290mV @ 40mA, 2A
  • Collector Emitter Breakdown Voltage
    20V
  • Transition Frequency
    260MHz
  • Collector Emitter Saturation Voltage
    290mV
  • Collector Base Voltage (VCBO)
    20V
  • Emitter Base Voltage (VEBO)
    7V
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
ZXTN26020DMFTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 290 @ 500mA 2V.The collector emitter saturation voltage is 290mV, which allows for maximum design flexibility.When VCE saturation is 290mV @ 40mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.In the part, the transition frequency is 260MHz.A maximum collector current of 1.5A volts can be achieved.

ZXTN26020DMFTA Features
the DC current gain for this device is 290 @ 500mA 2V
a collector emitter saturation voltage of 290mV
the vce saturation(Max) is 290mV @ 40mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 260MHz


ZXTN26020DMFTA Applications
There are a lot of Diodes Incorporated
ZXTN26020DMFTA applications of single BJT transistors.


Inverter
Interface
Driver
Muting
ZXTN26020DMFTA More Descriptions
Trans GP BJT NPN 20V 1.5A 3-Pin DFN EP T/R
TRANSISTOR, NPN, 20V, 1.5A, DFN1411-3
TRANSISTOR, NPN, 20V, 1.5A, DFN1411-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:20V; Transition Frequency Typ ft:260MHz; Power Dissipation Pd:1W; DC Collector Current:1.5A; DC Current Gain hFE:1000; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:DFN; No. of Pins:3; SVHC:No SVHC (20-Jun-2011)
Product Comparison
The three parts on the right have similar specifications to ZXTN26020DMFTA.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Max Power Dissipation
    Terminal Position
    Peak Reflow Temperature (Cel)
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Weight
    Terminal Form
    Base Part Number
    Max Breakdown Voltage
    Height
    Length
    Width
    Lead Free
    Power - Max
    View Compare
  • ZXTN26020DMFTA
    ZXTN26020DMFTA
    Diodes Incorporated
    15 Weeks
    Surface Mount
    Surface Mount
    3-XDFN
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e4
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    HIGH RELIABILITY
    Other Transistors
    1W
    BOTTOM
    260
    260MHz
    40
    3
    1
    Single
    1W
    COLLECTOR
    SWITCHING
    260MHz
    NPN
    NPN
    20V
    1.5A
    290 @ 500mA 2V
    100nA ICBO
    290mV @ 40mA, 2A
    20V
    260MHz
    290mV
    20V
    7V
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • ZXTN25012EFLTA
    ZXTN25012EFLTA
    Diodes Incorporated
    15 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn) - annealed
    -
    -
    350mW
    DUAL
    260
    260MHz
    40
    3
    1
    Single
    350mW
    -
    -
    260MHz
    NPN
    NPN
    12V
    2A
    500 @ 10mA 2V
    50nA ICBO
    300mV @ 100mA, 5A
    12V
    260MHz
    300mV
    20V
    7V
    -
    No
    ROHS3 Compliant
    7.994566mg
    GULL WING
    ZXTN25012E
    12V
    1.02mm
    3.04mm
    1.4mm
    Lead Free
    -
    ZXTN26020DMFTA vs ZXTN25012EFLTA
  • ZXTN08400BFFTA
    ZXTN08400BFFTA
    Diodes Incorporated
    15 Weeks
    Surface Mount
    Surface Mount
    SOT-23-3 Flat Leads
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    -
    Other Transistors
    2W
    DUAL
    260
    40MHz
    40
    3
    1
    Single
    2W
    -
    SWITCHING
    40MHz
    NPN
    NPN
    400V
    500mA
    100 @ 50mA 5V
    50nA ICBO
    175mV @ 100mA, 500mA
    400V
    40MHz
    175mV
    450V
    7V
    No SVHC
    No
    ROHS3 Compliant
    -
    GULL WING
    ZXTN08400B
    400V
    1mm
    3mm
    1.7mm
    Lead Free
    1.5W
    ZXTN26020DMFTA vs ZXTN08400BFFTA
  • ZXTN5551FLTA
    ZXTN5551FLTA
    Diodes Incorporated
    15 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2007
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn) - annealed
    -
    Other Transistors
    330mW
    DUAL
    260
    130MHz
    40
    3
    1
    Single
    330mW
    -
    -
    130MHz
    NPN
    NPN
    160V
    600mA
    80 @ 10mA 5V
    50nA ICBO
    200mV @ 5mA, 50mA
    160V
    130MHz
    -
    180V
    6V
    No SVHC
    No
    ROHS3 Compliant
    7.994566mg
    GULL WING
    ZXTN5551
    160V
    1.02mm
    3.04mm
    1.4mm
    -
    -
    ZXTN26020DMFTA vs ZXTN5551FLTA
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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