Diodes Incorporated ZXTN2005ZTA
- Part Number:
- ZXTN2005ZTA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3553775-ZXTN2005ZTA
- Description:
- TRANS NPN 25V 5.5A SOT89
- Datasheet:
- ZXTN2005ZTA
Diodes Incorporated ZXTN2005ZTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXTN2005ZTA.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Number of Pins4
- Weight51.993025mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Voltage - Rated DC25V
- Max Power Dissipation2.1W
- Terminal PositionDUAL
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Current Rating5.5A
- Frequency150MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberZXTN2005
- Pin Count4
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2.1W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product150MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)25V
- Max Collector Current5.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 1A 1V
- Current - Collector Cutoff (Max)20nA ICBO
- Vce Saturation (Max) @ Ib, Ic200mV @ 150mA, 6.5A
- Collector Emitter Breakdown Voltage25V
- Transition Frequency150MHz
- Collector Emitter Saturation Voltage200mV
- Max Breakdown Voltage25V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)7V
- hFE Min200
- Continuous Collector Current5.5A
- Height1.6mm
- Length4.6mm
- Width2.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZXTN2005ZTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 300 @ 1A 1V.The collector emitter saturation voltage is 200mV, which allows for maximum design flexibility.When VCE saturation is 200mV @ 150mA, 6.5A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 5.5A for high efficiency.Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 5.5A.In the part, the transition frequency is 150MHz.This device can take an input voltage of 25V volts before it breaks down.A maximum collector current of 5.5A volts can be achieved.
ZXTN2005ZTA Features
the DC current gain for this device is 300 @ 1A 1V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 150mA, 6.5A
the emitter base voltage is kept at 7V
the current rating of this device is 5.5A
a transition frequency of 150MHz
ZXTN2005ZTA Applications
There are a lot of Diodes Incorporated
ZXTN2005ZTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 300 @ 1A 1V.The collector emitter saturation voltage is 200mV, which allows for maximum design flexibility.When VCE saturation is 200mV @ 150mA, 6.5A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 5.5A for high efficiency.Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 5.5A.In the part, the transition frequency is 150MHz.This device can take an input voltage of 25V volts before it breaks down.A maximum collector current of 5.5A volts can be achieved.
ZXTN2005ZTA Features
the DC current gain for this device is 300 @ 1A 1V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 150mA, 6.5A
the emitter base voltage is kept at 7V
the current rating of this device is 5.5A
a transition frequency of 150MHz
ZXTN2005ZTA Applications
There are a lot of Diodes Incorporated
ZXTN2005ZTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
ZXTN2005ZTA More Descriptions
Trans GP BJT NPN 25V 5.5A 4-Pin(3 Tab) SOT-89 T/R
Trans, Npn, 25V, 5.5A, 150Deg C, 2.1W Rohs Compliant: Yes |Diodes Inc. ZXTN2005ZTA
Bipolar Transistors - BJT 25V NPN Low Sat
Trans, Npn, 25V, 5.5A, 150Deg C, 2.1W Rohs Compliant: Yes |Diodes Inc. ZXTN2005ZTA
Bipolar Transistors - BJT 25V NPN Low Sat
The three parts on the right have similar specifications to ZXTN2005ZTA.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeAdditional FeatureSubcategoryJESD-30 CodeView Compare
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ZXTN2005ZTA15 WeeksSurface MountSurface MountTO-243AA451.993025mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)25V2.1WDUALFLAT2605.5A150MHz40ZXTN200541Single2.1WCOLLECTORSWITCHING150MHzNPNNPN25V5.5A300 @ 1A 1V20nA ICBO200mV @ 150mA, 6.5A25V150MHz200mV25V60V7V2005.5A1.6mm4.6mm2.6mmNo SVHCNoROHS3 CompliantLead Free----
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15 WeeksSurface MountSurface Mount3-XDFN3-SILICON-55°C~150°C TJTape & Reel (TR)2006e4yesActive1 (Unlimited)3EAR99Nickel/Palladium/Gold (Ni/Pd/Au)-1WBOTTOM-260-260MHz40-31Single1WCOLLECTORSWITCHING260MHzNPNNPN20V1.5A290 @ 500mA 2V100nA ICBO290mV @ 40mA, 2A20V260MHz290mV-20V7V-----No SVHCNoROHS3 Compliant-HIGH RELIABILITYOther Transistors-
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15 WeeksSurface MountSurface MountTO-243AA451.993025mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)30V2.1W-FLAT2606A140MHz40ZXTN200731Single2.1WCOLLECTORSWITCHING140MHzNPNNPN30V6A100 @ 1A 1V50nA ICBO190mV @ 300mA, 6.5A30V140MHz-30V80V7V-6A1.5mm4.5mm2.48mm-NoROHS3 CompliantLead Free--R-PSSO-F3
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15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealed-330mWDUALGULL WING260-130MHz40ZXTN555131Single330mW--130MHzNPNNPN160V600mA80 @ 10mA 5V50nA ICBO200mV @ 5mA, 50mA160V130MHz-160V180V6V--1.02mm3.04mm1.4mmNo SVHCNoROHS3 Compliant--Other Transistors-
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