Rohm Semiconductor 2SC5880TV2Q
- Part Number:
- 2SC5880TV2Q
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 4538821-2SC5880TV2Q
- Description:
- TRANS NPN 60V 2A 3-PIN ATV
- ECAD Model:
-
- Datasheet:
- 2SC5880
Rohm Semiconductor 2SC5880TV2Q technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SC5880TV2Q.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / Case3-SIP
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTIN SILVER COPPER
- HTS Code8541.29.00.75
- SubcategoryOther Transistors
- Max Power Dissipation1W
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)10
- Pin Count3
- JESD-30 CodeR-PSIP-T3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product200MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)500mV
- Max Collector Current2A
- DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 100mA 2V
- Current - Collector Cutoff (Max)1μA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 1A
- Collector Emitter Breakdown Voltage60V
- Current - Collector (Ic) (Max)2A
- Transition Frequency200MHz
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)6V
- RoHS StatusROHS3 Compliant
2SC5880TV2Q Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 100mA 2V.When VCE saturation is 500mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 200MHz.A maximum collector current of 2A volts can be achieved.
2SC5880TV2Q Features
the DC current gain for this device is 120 @ 100mA 2V
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 200MHz
2SC5880TV2Q Applications
There are a lot of ROHM Semiconductor
2SC5880TV2Q applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 100mA 2V.When VCE saturation is 500mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 200MHz.A maximum collector current of 2A volts can be achieved.
2SC5880TV2Q Features
the DC current gain for this device is 120 @ 100mA 2V
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 200MHz
2SC5880TV2Q Applications
There are a lot of ROHM Semiconductor
2SC5880TV2Q applications of single BJT transistors.
Inverter
Interface
Driver
Muting
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