Diodes Incorporated ZXTN19020DGTA
- Part Number:
- ZXTN19020DGTA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3585245-ZXTN19020DGTA
- Description:
- TRANS NPN 20V 9A SOT223
- Datasheet:
- ZXTN19020DGTA
Diodes Incorporated ZXTN19020DGTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXTN19020DGTA.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Max Power Dissipation5.3W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberZXTN19020D
- Pin Count4
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Power - Max3W
- Gain Bandwidth Product160MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)20V
- Max Collector Current9A
- DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 100mA 2V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic250mV @ 450mA, 9A
- Collector Emitter Breakdown Voltage20V
- Max Frequency160MHz
- Transition Frequency160MHz
- Collector Emitter Saturation Voltage250mV
- Max Breakdown Voltage20V
- Collector Base Voltage (VCBO)70V
- Emitter Base Voltage (VEBO)7V
- Height1.65mm
- Length6.7mm
- Width3.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZXTN19020DGTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 100mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 450mA, 9A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Parts of this part have transition frequencies of 160MHz.Single BJT transistor can take a breakdown input voltage of 20V volts.During maximum operation, collector current can be as low as 9A volts.
ZXTN19020DGTA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 450mA, 9A
the emitter base voltage is kept at 7V
a transition frequency of 160MHz
ZXTN19020DGTA Applications
There are a lot of Diodes Incorporated
ZXTN19020DGTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 100mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 450mA, 9A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Parts of this part have transition frequencies of 160MHz.Single BJT transistor can take a breakdown input voltage of 20V volts.During maximum operation, collector current can be as low as 9A volts.
ZXTN19020DGTA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 450mA, 9A
the emitter base voltage is kept at 7V
a transition frequency of 160MHz
ZXTN19020DGTA Applications
There are a lot of Diodes Incorporated
ZXTN19020DGTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
ZXTN19020DGTA More Descriptions
ZXTN19020DG Series NPN 20 V 9 A High Gain Power Transistor SMT - SOT-223-3
Trans GP BJT NPN 20V 9A 5300mW 4-Pin(3 Tab) SOT-223 T/R
Trans, Npn, 20V, 9A, 150Deg C, 3W Rohs Compliant: Yes |Diodes Inc. ZXTN19020DGTA
Trans GP BJT NPN 20V 9A 5300mW 4-Pin(3 Tab) SOT-223 T/R
Trans, Npn, 20V, 9A, 150Deg C, 3W Rohs Compliant: Yes |Diodes Inc. ZXTN19020DGTA
The three parts on the right have similar specifications to ZXTN19020DGTA.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationCase ConnectionPower - MaxGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageMax FrequencyTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeAdditional FeatureFrequencyPower DissipationTransistor ApplicationVoltage - Rated DCCurrent RatingJESD-30 CodeContinuous Collector CurrentView Compare
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ZXTN19020DGTA15 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2008e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)Other Transistors5.3WDUALGULL WING26040ZXTN19020D41SingleCOLLECTOR3W160MHzNPNNPN20V9A300 @ 100mA 2V50nA ICBO250mV @ 450mA, 9A20V160MHz160MHz250mV20V70V7V1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free---------
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15 WeeksSurface MountSurface Mount3-XDFN3-SILICON-55°C~150°C TJTape & Reel (TR)2006e4yesActive1 (Unlimited)3EAR99Nickel/Palladium/Gold (Ni/Pd/Au)Other Transistors1WBOTTOM-26040-31SingleCOLLECTOR-260MHzNPNNPN20V1.5A290 @ 500mA 2V100nA ICBO290mV @ 40mA, 2A20V-260MHz290mV-20V7V---No SVHCNoROHS3 Compliant-HIGH RELIABILITY260MHz1WSWITCHING----
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15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealed-350mWDUALGULL WING26040ZXTN25012E31Single--260MHzNPNNPN12V2A500 @ 10mA 2V50nA ICBO300mV @ 100mA, 5A12V-260MHz300mV12V20V7V1.02mm3.04mm1.4mm-NoROHS3 CompliantLead Free-260MHz350mW-----
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15 WeeksSurface MountSurface MountTO-243AA451.993025mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)-2.1W-FLAT26040ZXTN200731SingleCOLLECTOR-140MHzNPNNPN30V6A100 @ 1A 1V50nA ICBO190mV @ 300mA, 6.5A30V-140MHz-30V80V7V1.5mm4.5mm2.48mm-NoROHS3 CompliantLead Free-140MHz2.1WSWITCHING30V6AR-PSSO-F36A
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