Diodes Incorporated ZXTN08400BFFTA
- Part Number:
- ZXTN08400BFFTA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2845836-ZXTN08400BFFTA
- Description:
- TRANS NPN 400V 0.5A SOT23F-3
- ECAD Model:
-
- Datasheet:
- ZXTN08400BFFTA
Diodes Incorporated ZXTN08400BFFTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXTN08400BFFTA.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-23-3 Flat Leads
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Max Power Dissipation2W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Frequency40MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberZXTN08400B
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2W
- Power - Max1.5W
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product40MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)400V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 50mA 5V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic175mV @ 100mA, 500mA
- Collector Emitter Breakdown Voltage400V
- Transition Frequency40MHz
- Collector Emitter Saturation Voltage175mV
- Max Breakdown Voltage400V
- Collector Base Voltage (VCBO)450V
- Emitter Base Voltage (VEBO)7V
- Height1mm
- Length3mm
- Width1.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZXTN08400BFFTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 50mA 5V.With a collector emitter saturation voltage of 175mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 175mV @ 100mA, 500mA.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.A transition frequency of 40MHz is present in the part.There is a breakdown input voltage of 400V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
ZXTN08400BFFTA Features
the DC current gain for this device is 100 @ 50mA 5V
a collector emitter saturation voltage of 175mV
the vce saturation(Max) is 175mV @ 100mA, 500mA
the emitter base voltage is kept at 7V
a transition frequency of 40MHz
ZXTN08400BFFTA Applications
There are a lot of Diodes Incorporated
ZXTN08400BFFTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 50mA 5V.With a collector emitter saturation voltage of 175mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 175mV @ 100mA, 500mA.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.A transition frequency of 40MHz is present in the part.There is a breakdown input voltage of 400V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
ZXTN08400BFFTA Features
the DC current gain for this device is 100 @ 50mA 5V
a collector emitter saturation voltage of 175mV
the vce saturation(Max) is 175mV @ 100mA, 500mA
the emitter base voltage is kept at 7V
a transition frequency of 40MHz
ZXTN08400BFFTA Applications
There are a lot of Diodes Incorporated
ZXTN08400BFFTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
ZXTN08400BFFTA More Descriptions
ZXTN08400BFF Series NPN 400 V 500 mA 1.5 W Transistor SMT - SOT-23F
400V 1.5W 100@50mA,5V 500mA NPN SOT-23F Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 400V 0.5A 2000mW 3-Pin SOT-23F T/R
Transistor NPN 400V 0.5A SOT23F | Diodes Inc ZXTN08400BFFTA
Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
NPN TRANSISTOR 400V 0,5A SOT23F
TRANSISTOR, NPN, SOT-23F; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency Typ ft:40MHz; Power Dissipation Pd:1.5W; DC Collector Current:500mA; DC Current Gain hFE:180; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:950mV; Continuous Collector Current Ic Max:500mA; Current Ic @ Vce Sat:500mA; Current Ic Continuous a Max:500mA; Current Ic hFE:500mA; Gain Bandwidth ft Min:40MHz; Gain Bandwidth ft Typ:40MHz; Hfe Min:10; Package / Case:SOT-23F; Peak Current Icm:1A; Power Dissipation Pd:1.5W; Power Dissipation Ptot Max:1.5W; Termination Type:SMD; Turn Off Time:240ns; Turn On Time:52ns; Voltage Vcbo:450V
400V 1.5W 100@50mA,5V 500mA NPN SOT-23F Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 400V 0.5A 2000mW 3-Pin SOT-23F T/R
Transistor NPN 400V 0.5A SOT23F | Diodes Inc ZXTN08400BFFTA
Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
NPN TRANSISTOR 400V 0,5A SOT23F
TRANSISTOR, NPN, SOT-23F; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency Typ ft:40MHz; Power Dissipation Pd:1.5W; DC Collector Current:500mA; DC Current Gain hFE:180; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:950mV; Continuous Collector Current Ic Max:500mA; Current Ic @ Vce Sat:500mA; Current Ic Continuous a Max:500mA; Current Ic hFE:500mA; Gain Bandwidth ft Min:40MHz; Gain Bandwidth ft Typ:40MHz; Hfe Min:10; Package / Case:SOT-23F; Peak Current Icm:1A; Power Dissipation Pd:1.5W; Power Dissipation Ptot Max:1.5W; Termination Type:SMD; Turn Off Time:240ns; Turn On Time:52ns; Voltage Vcbo:450V
The three parts on the right have similar specifications to ZXTN08400BFFTA.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationPower - MaxTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeWeightVoltage - Rated DCCurrent RatingCase ConnectionhFE MinContinuous Collector CurrentAdditional FeatureView Compare
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ZXTN08400BFFTA15 WeeksSurface MountSurface MountSOT-23-3 Flat Leads3SILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors2WDUALGULL WING26040MHz40ZXTN08400B31Single2W1.5WSWITCHING40MHzNPNNPN400V500mA100 @ 50mA 5V50nA ICBO175mV @ 100mA, 500mA400V40MHz175mV400V450V7V1mm3mm1.7mmNo SVHCNoROHS3 CompliantLead Free-------- -
15 WeeksSurface MountSurface MountTO-243AA4SILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)-2.1WDUALFLAT260150MHz40ZXTN200541Single2.1W-SWITCHING150MHzNPNNPN25V5.5A300 @ 1A 1V20nA ICBO200mV @ 150mA, 6.5A25V150MHz200mV25V60V7V1.6mm4.6mm2.6mmNo SVHCNoROHS3 CompliantLead Free51.993025mg25V5.5ACOLLECTOR2005.5A-
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30 WeeksThrough HoleThrough HoleE-Line-33--55°C~150°C TJBulk2006e3-Active1 (Unlimited)-EAR99Matte Tin (Sn)-1W-----ZXTN2010A--Single---130MHz-NPN60V4.5A100 @ 2A 1V50nA ICBO210mV @ 200mA, 5A60V---150V7V4.01mm4.77mm2.41mmNo SVHCNoROHS3 CompliantLead Free-60V4.5A--4.5A-
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15 WeeksSurface MountSurface Mount3-XDFN3SILICON-55°C~150°C TJTape & Reel (TR)2006e4yesActive1 (Unlimited)3EAR99Nickel/Palladium/Gold (Ni/Pd/Au)Other Transistors1WBOTTOM-260260MHz40-31Single1W-SWITCHING260MHzNPNNPN20V1.5A290 @ 500mA 2V100nA ICBO290mV @ 40mA, 2A20V260MHz290mV-20V7V---No SVHCNoROHS3 Compliant----COLLECTOR--HIGH RELIABILITY
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