Diodes Incorporated ZXTN25012EFLTA
- Part Number:
- ZXTN25012EFLTA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2845890-ZXTN25012EFLTA
- Description:
- TRANS NPN 12V 2A SOT23-3
- ECAD Model:
-
- Datasheet:
- ZXTN25012EFLTA
Diodes Incorporated ZXTN25012EFLTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXTN25012EFLTA.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - annealed
- Max Power Dissipation350mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Frequency260MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberZXTN25012E
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation350mW
- Gain Bandwidth Product260MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)12V
- Max Collector Current2A
- DC Current Gain (hFE) (Min) @ Ic, Vce500 @ 10mA 2V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 100mA, 5A
- Collector Emitter Breakdown Voltage12V
- Transition Frequency260MHz
- Collector Emitter Saturation Voltage300mV
- Max Breakdown Voltage12V
- Collector Base Voltage (VCBO)20V
- Emitter Base Voltage (VEBO)7V
- Height1.02mm
- Length3.04mm
- Width1.4mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZXTN25012EFLTA Overview
DC current gain in this device equals 500 @ 10mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 300mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 100mA, 5A.An emitter's base voltage can be kept at 7V to gain high efficiency.As a result, the part has a transition frequency of 260MHz.Breakdown input voltage is 12V volts.In extreme cases, the collector current can be as low as 2A volts.
ZXTN25012EFLTA Features
the DC current gain for this device is 500 @ 10mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 100mA, 5A
the emitter base voltage is kept at 7V
a transition frequency of 260MHz
ZXTN25012EFLTA Applications
There are a lot of Diodes Incorporated
ZXTN25012EFLTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 500 @ 10mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 300mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 100mA, 5A.An emitter's base voltage can be kept at 7V to gain high efficiency.As a result, the part has a transition frequency of 260MHz.Breakdown input voltage is 12V volts.In extreme cases, the collector current can be as low as 2A volts.
ZXTN25012EFLTA Features
the DC current gain for this device is 500 @ 10mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 100mA, 5A
the emitter base voltage is kept at 7V
a transition frequency of 260MHz
ZXTN25012EFLTA Applications
There are a lot of Diodes Incorporated
ZXTN25012EFLTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
ZXTN25012EFLTA More Descriptions
ZXTN25012EFL Series 12 V 2 A NPN SMT Low Power Transistor - SOT-23
Trans, NPN, Transistor, GP,12V 2A SOT23 | Diodes Inc ZXTN25012EFLTA
Small Signal Bipolar Transistor, 2A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 12V 2A 350mW 3-Pin SOT-23 T/R
NPN TRANSISTOR 12V 2A SOT23 RoHSconf
TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Power Dissipation Pd:350mW; DC Collector Current:5A; DC Current Gain hFE:800; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Collector Emitter Voltage Vces:130mV; Continuous Collector Current Ic Max:2A; Current Ib:500mA; Current Ic Continuous a Max:5A; Current Ic hFE:2A; Gain Bandwidth ft Typ:260MHz; Hfe Min:370; Package / Case:SOT-23; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; Termination Type:SMD; Turn Off Time:72ns; Turn On Time:70ns; Voltage Vcbo:20V
Trans, NPN, Transistor, GP,12V 2A SOT23 | Diodes Inc ZXTN25012EFLTA
Small Signal Bipolar Transistor, 2A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 12V 2A 350mW 3-Pin SOT-23 T/R
NPN TRANSISTOR 12V 2A SOT23 RoHSconf
TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Power Dissipation Pd:350mW; DC Collector Current:5A; DC Current Gain hFE:800; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Collector Emitter Voltage Vces:130mV; Continuous Collector Current Ic Max:2A; Current Ib:500mA; Current Ic Continuous a Max:5A; Current Ic hFE:2A; Gain Bandwidth ft Typ:260MHz; Hfe Min:370; Package / Case:SOT-23; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; Termination Type:SMD; Turn Off Time:72ns; Turn On Time:70ns; Voltage Vcbo:20V
The three parts on the right have similar specifications to ZXTN25012EFLTA.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)HeightLengthWidthRadiation HardeningRoHS StatusLead FreeAdditional FeatureSubcategoryCase ConnectionTransistor ApplicationREACH SVHCVoltage - Rated DCCurrent RatingJESD-30 CodeContinuous Collector CurrentView Compare
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ZXTN25012EFLTA15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealed350mWDUALGULL WING260260MHz40ZXTN25012E31Single350mW260MHzNPNNPN12V2A500 @ 10mA 2V50nA ICBO300mV @ 100mA, 5A12V260MHz300mV12V20V7V1.02mm3.04mm1.4mmNoROHS3 CompliantLead Free---------- -
15 WeeksSurface MountSurface Mount3-XDFN3-SILICON-55°C~150°C TJTape & Reel (TR)2006e4yesActive1 (Unlimited)3EAR99Nickel/Palladium/Gold (Ni/Pd/Au)1WBOTTOM-260260MHz40-31Single1W260MHzNPNNPN20V1.5A290 @ 500mA 2V100nA ICBO290mV @ 40mA, 2A20V260MHz290mV-20V7V---NoROHS3 Compliant-HIGH RELIABILITYOther TransistorsCOLLECTORSWITCHINGNo SVHC----
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15 WeeksSurface MountSurface MountTO-243AA451.993025mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)2.1W-FLAT260140MHz40ZXTN200731Single2.1W140MHzNPNNPN30V6A100 @ 1A 1V50nA ICBO190mV @ 300mA, 6.5A30V140MHz-30V80V7V1.5mm4.5mm2.48mmNoROHS3 CompliantLead Free--COLLECTORSWITCHING-30V6AR-PSSO-F36A
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15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealed330mWDUALGULL WING260130MHz40ZXTN555131Single330mW130MHzNPNNPN160V600mA80 @ 10mA 5V50nA ICBO200mV @ 5mA, 50mA160V130MHz-160V180V6V1.02mm3.04mm1.4mmNoROHS3 Compliant--Other Transistors--No SVHC----
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