Diodes Incorporated DZT658-13

Name: DZT658-13
Brand: Diodes Incorporated
SKU: 4538827-DZT658-13
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DZT658-13

Manufacturer:: Diodes Incorporated

Ventron No:: 4538827-DZT658-13

Description:: TRANS NPN 400V 0.5A SOT-223

ECAD Model:

Datasheet:: DZT658

Specifications

Diodes Incorporated DZT658-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DZT658-13.

Factory Lead Time
18 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
50MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
DZT658
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
50MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 200mA 10V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
400V
Transition Frequency
50MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
400V
Collector Base Voltage (VCBO)
400V
Emitter Base Voltage (VEBO)
5V
Height
1.6mm
Length
6.5mm
Width
3.5mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

DZT658-13 Overview
This device has a DC current gain of 40 @ 200mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 400V volts can be used.A maximum collector current of 500mA volts is possible.

DZT658-13 Features
the DC current gain for this device is 40 @ 200mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 50MHz

DZT658-13 Applications
There are a lot of Diodes Incorporated
DZT658-13 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

DZT658-13 More Descriptions

DZT658 Series 400 V 500 mA 1 W NPN Surface Mount Transistor - SOT-223-3
Trans GP BJT NPN 400V 0.5A 1000mW 4-Pin(3 Tab) SOT-223 T/R
Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:400V; Dc Collector Current:500Ma; Power Dissipation Pd:1W; Transistor Mounting:surface Mount; No. Of Pins:4Pins; Transition Frequency Ft:50Mhz; Dc Current Gain Hfe:40Hfe Rohs Compliant: No

Certification