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ZXTN5551FLTA

Diodes Incorporated ZXTN5551FLTA

Part Number:
ZXTN5551FLTA
Manufacturer:
Diodes Incorporated
Ventron No:
2845722-ZXTN5551FLTA
Description:
TRANS NPN 160V 0.6A SOT23-3
ECAD Model:
Datasheet:
ZXTN5551FLTA

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Specifications
Diodes Incorporated ZXTN5551FLTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXTN5551FLTA.
  • Factory Lead Time
    15 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2007
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn) - annealed
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    330mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Frequency
    130MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    ZXTN5551
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    330mW
  • Gain Bandwidth Product
    130MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    160V
  • Max Collector Current
    600mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 10mA 5V
  • Current - Collector Cutoff (Max)
    50nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    200mV @ 5mA, 50mA
  • Collector Emitter Breakdown Voltage
    160V
  • Transition Frequency
    130MHz
  • Max Breakdown Voltage
    160V
  • Collector Base Voltage (VCBO)
    180V
  • Emitter Base Voltage (VEBO)
    6V
  • Height
    1.02mm
  • Length
    3.04mm
  • Width
    1.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
ZXTN5551FLTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 80 @ 10mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 130MHz in the part.Single BJT transistor can be broken down at a voltage of 160V volts.When collector current reaches its maximum, it can reach 600mA volts.

ZXTN5551FLTA Features
the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 130MHz


ZXTN5551FLTA Applications
There are a lot of Diodes Incorporated
ZXTN5551FLTA applications of single BJT transistors.


Inverter
Interface
Driver
Muting
ZXTN5551FLTA More Descriptions
Trans GP BJT NPN 160V 0.6A 3-Pin SOT-23 T/R
ZXTN555 Series NPN 330 mW 160 V 600 mA Surface Mount Transistor - SOT-23
Trans, Npn, 160V, 0.6A, 150Deg C, 0.33W Rohs Compliant: Yes |Diodes Inc. ZXTN5551FLTA
Product Comparison
The three parts on the right have similar specifications to ZXTN5551FLTA.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Power Dissipation
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Voltage - Rated DC
    Current Rating
    Continuous Collector Current
    Lead Free
    Additional Feature
    Case Connection
    Transistor Application
    Collector Emitter Saturation Voltage
    Power - Max
    View Compare
  • ZXTN5551FLTA
    ZXTN5551FLTA
    Diodes Incorporated
    15 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2007
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn) - annealed
    Other Transistors
    330mW
    DUAL
    GULL WING
    260
    130MHz
    40
    ZXTN5551
    3
    1
    Single
    330mW
    130MHz
    NPN
    NPN
    160V
    600mA
    80 @ 10mA 5V
    50nA ICBO
    200mV @ 5mA, 50mA
    160V
    130MHz
    160V
    180V
    6V
    1.02mm
    3.04mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • ZXTN2010A
    ZXTN2010A
    Diodes Incorporated
    30 Weeks
    Through Hole
    Through Hole
    E-Line-3
    3
    -
    -
    -55°C~150°C TJ
    Bulk
    2006
    e3
    -
    Active
    1 (Unlimited)
    -
    EAR99
    Matte Tin (Sn)
    -
    1W
    -
    -
    -
    -
    -
    ZXTN2010A
    -
    -
    Single
    -
    130MHz
    -
    NPN
    60V
    4.5A
    100 @ 2A 1V
    50nA ICBO
    210mV @ 200mA, 5A
    60V
    -
    -
    150V
    7V
    4.01mm
    4.77mm
    2.41mm
    No SVHC
    No
    ROHS3 Compliant
    60V
    4.5A
    4.5A
    Lead Free
    -
    -
    -
    -
    -
    ZXTN5551FLTA vs ZXTN2010A
  • ZXTN26020DMFTA
    ZXTN26020DMFTA
    Diodes Incorporated
    15 Weeks
    Surface Mount
    Surface Mount
    3-XDFN
    3
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e4
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    Other Transistors
    1W
    BOTTOM
    -
    260
    260MHz
    40
    -
    3
    1
    Single
    1W
    260MHz
    NPN
    NPN
    20V
    1.5A
    290 @ 500mA 2V
    100nA ICBO
    290mV @ 40mA, 2A
    20V
    260MHz
    -
    20V
    7V
    -
    -
    -
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    HIGH RELIABILITY
    COLLECTOR
    SWITCHING
    290mV
    -
    ZXTN5551FLTA vs ZXTN26020DMFTA
  • ZXTN08400BFFTA
    ZXTN08400BFFTA
    Diodes Incorporated
    15 Weeks
    Surface Mount
    Surface Mount
    SOT-23-3 Flat Leads
    3
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    Other Transistors
    2W
    DUAL
    GULL WING
    260
    40MHz
    40
    ZXTN08400B
    3
    1
    Single
    2W
    40MHz
    NPN
    NPN
    400V
    500mA
    100 @ 50mA 5V
    50nA ICBO
    175mV @ 100mA, 500mA
    400V
    40MHz
    400V
    450V
    7V
    1mm
    3mm
    1.7mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    Lead Free
    -
    -
    SWITCHING
    175mV
    1.5W
    ZXTN5551FLTA vs ZXTN08400BFFTA
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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