Fairchild/ON Semiconductor KSE210STU
- Part Number:
- KSE210STU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 4538904-KSE210STU
- Description:
- TRANS PNP 25V 5A TO-126
- Datasheet:
- KSE210STU
Fairchild/ON Semiconductor KSE210STU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KSE210STU.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-225AA, TO-126-3
- Number of Pins3
- Weight761mg
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-25V
- Max Power Dissipation15W
- Current Rating-5A
- Frequency65MHz
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation15W
- Gain Bandwidth Product65MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)25V
- Max Collector Current5A
- DC Current Gain (hFE) (Min) @ Ic, Vce45 @ 2A 1V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic1.8V @ 1A, 5A
- Collector Emitter Breakdown Voltage25V
- Transition Frequency65MHz
- Collector Emitter Saturation Voltage-1.8V
- Collector Base Voltage (VCBO)-40V
- Emitter Base Voltage (VEBO)-8V
- hFE Min70
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
KSE210STU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 45 @ 2A 1V DC current gain.As it features a collector emitter saturation voltage of -1.8V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -8V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 65MHz in the part.When collector current reaches its maximum, it can reach 5A volts.
KSE210STU Features
the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of -1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at -8V
the current rating of this device is -5A
a transition frequency of 65MHz
KSE210STU Applications
There are a lot of ON Semiconductor
KSE210STU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 45 @ 2A 1V DC current gain.As it features a collector emitter saturation voltage of -1.8V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -8V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 65MHz in the part.When collector current reaches its maximum, it can reach 5A volts.
KSE210STU Features
the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of -1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at -8V
the current rating of this device is -5A
a transition frequency of 65MHz
KSE210STU Applications
There are a lot of ON Semiconductor
KSE210STU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
KSE210STU More Descriptions
Bipolar Transistors - BJT PNP Si Transistor Epitaxial
Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Trans GP BJT PNP 25V 5A 3-Pin(3 Tab) TO-126 Rail
Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Trans GP BJT PNP 25V 5A 3-Pin(3 Tab) TO-126 Rail
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