KSE210STU

Fairchild/ON Semiconductor KSE210STU

Part Number:
KSE210STU
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
4538904-KSE210STU
Description:
TRANS PNP 25V 5A TO-126
ECAD Model:
Datasheet:
KSE210STU

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Specifications
Fairchild/ON Semiconductor KSE210STU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KSE210STU.
  • Lifecycle Status
    LAST SHIPMENTS (Last Updated: 1 week ago)
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-225AA, TO-126-3
  • Number of Pins
    3
  • Weight
    761mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tube
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -25V
  • Max Power Dissipation
    15W
  • Current Rating
    -5A
  • Frequency
    65MHz
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    15W
  • Gain Bandwidth Product
    65MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    25V
  • Max Collector Current
    5A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    45 @ 2A 1V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    1.8V @ 1A, 5A
  • Collector Emitter Breakdown Voltage
    25V
  • Transition Frequency
    65MHz
  • Collector Emitter Saturation Voltage
    -1.8V
  • Collector Base Voltage (VCBO)
    -40V
  • Emitter Base Voltage (VEBO)
    -8V
  • hFE Min
    70
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
KSE210STU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 45 @ 2A 1V DC current gain.As it features a collector emitter saturation voltage of -1.8V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -8V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 65MHz in the part.When collector current reaches its maximum, it can reach 5A volts.

KSE210STU Features
the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of -1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at -8V
the current rating of this device is -5A
a transition frequency of 65MHz


KSE210STU Applications
There are a lot of ON Semiconductor
KSE210STU applications of single BJT transistors.


Inverter
Interface
Driver
Muting
KSE210STU More Descriptions
Bipolar Transistors - BJT PNP Si Transistor Epitaxial
Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Trans GP BJT PNP 25V 5A 3-Pin(3 Tab) TO-126 Rail
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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