ZXTN2007ZTA

Diodes Incorporated ZXTN2007ZTA

Part Number:
ZXTN2007ZTA
Manufacturer:
Diodes Incorporated
Ventron No:
2845780-ZXTN2007ZTA
Description:
TRANS NPN 30V 6A SOT89
ECAD Model:
Datasheet:
ZXTN2007ZTA

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Comments
Specifications
Diodes Incorporated ZXTN2007ZTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXTN2007ZTA.
  • Factory Lead Time
    15 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-243AA
  • Number of Pins
    4
  • Weight
    51.993025mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Voltage - Rated DC
    30V
  • Max Power Dissipation
    2.1W
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    6A
  • Frequency
    140MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    ZXTN2007
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-F3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    2.1W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    140MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    30V
  • Max Collector Current
    6A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 1A 1V
  • Current - Collector Cutoff (Max)
    50nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    190mV @ 300mA, 6.5A
  • Collector Emitter Breakdown Voltage
    30V
  • Transition Frequency
    140MHz
  • Max Breakdown Voltage
    30V
  • Collector Base Voltage (VCBO)
    80V
  • Emitter Base Voltage (VEBO)
    7V
  • Continuous Collector Current
    6A
  • Height
    1.5mm
  • Length
    4.5mm
  • Width
    2.48mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
ZXTN2007ZTA Overview
This device has a DC current gain of 100 @ 1A 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 190mV @ 300mA, 6.5A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 6A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.This device has a current rating of 6A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 140MHz.A breakdown input voltage of 30V volts can be used.A maximum collector current of 6A volts is possible.

ZXTN2007ZTA Features
the DC current gain for this device is 100 @ 1A 1V
the vce saturation(Max) is 190mV @ 300mA, 6.5A
the emitter base voltage is kept at 7V
the current rating of this device is 6A
a transition frequency of 140MHz


ZXTN2007ZTA Applications
There are a lot of Diodes Incorporated
ZXTN2007ZTA applications of single BJT transistors.


Inverter
Interface
Driver
Muting
ZXTN2007ZTA More Descriptions
ZXTN2007Z Series 30 V 6 A NPN SMT Silicon Medium Power Transistor - SOT-89
Trans GP BJT NPN 30V 6A 2100mW 4-Pin(3 Tab) SOT-89 T/R
Trans, Npn, 30V, 6A, 150Deg C, 2.1W Rohs Compliant: Yes |Diodes Inc. ZXTN2007ZTA
Product Comparison
The three parts on the right have similar specifications to ZXTN2007ZTA.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    Continuous Collector Current
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Subcategory
    Collector Emitter Saturation Voltage
    REACH SVHC
    Terminal Position
    View Compare
  • ZXTN2007ZTA
    ZXTN2007ZTA
    15 Weeks
    Surface Mount
    Surface Mount
    TO-243AA
    4
    51.993025mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    30V
    2.1W
    FLAT
    260
    6A
    140MHz
    40
    ZXTN2007
    3
    R-PSSO-F3
    1
    Single
    2.1W
    COLLECTOR
    SWITCHING
    140MHz
    NPN
    NPN
    30V
    6A
    100 @ 1A 1V
    50nA ICBO
    190mV @ 300mA, 6.5A
    30V
    140MHz
    30V
    80V
    7V
    6A
    1.5mm
    4.5mm
    2.48mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
  • ZXTN2011ZTA
    15 Weeks
    Surface Mount
    Surface Mount
    TO-243AA
    4
    51.993025mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e3
    no
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    100V
    2.1W
    FLAT
    260
    4.5A
    130MHz
    40
    -
    3
    R-PSSO-F3
    1
    Single
    2.1W
    COLLECTOR
    SWITCHING
    130MHz
    NPN
    NPN
    100V
    4.5A
    100 @ 2A 2V
    50nA ICBO
    195mV @ 500mA, 5A
    100V
    130MHz
    100V
    200V
    7V
    4.5A
    1.6mm
    4.6mm
    2.6mm
    No
    ROHS3 Compliant
    Lead Free
    Other Transistors
    195mV
    No SVHC
    -
  • ZXTN2010A
    30 Weeks
    Through Hole
    Through Hole
    E-Line-3
    3
    -
    -
    -55°C~150°C TJ
    Bulk
    2006
    e3
    -
    Active
    1 (Unlimited)
    -
    EAR99
    Matte Tin (Sn)
    60V
    1W
    -
    -
    4.5A
    -
    -
    ZXTN2010A
    -
    -
    -
    Single
    -
    -
    -
    130MHz
    -
    NPN
    60V
    4.5A
    100 @ 2A 1V
    50nA ICBO
    210mV @ 200mA, 5A
    60V
    -
    -
    150V
    7V
    4.5A
    4.01mm
    4.77mm
    2.41mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    No SVHC
    -
  • ZXTN5551FLTA
    15 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2007
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn) - annealed
    -
    330mW
    GULL WING
    260
    -
    130MHz
    40
    ZXTN5551
    3
    -
    1
    Single
    330mW
    -
    -
    130MHz
    NPN
    NPN
    160V
    600mA
    80 @ 10mA 5V
    50nA ICBO
    200mV @ 5mA, 50mA
    160V
    130MHz
    160V
    180V
    6V
    -
    1.02mm
    3.04mm
    1.4mm
    No
    ROHS3 Compliant
    -
    Other Transistors
    -
    No SVHC
    DUAL
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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