Diodes Incorporated ZXTN2007ZTA
- Part Number:
- ZXTN2007ZTA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2845780-ZXTN2007ZTA
- Description:
- TRANS NPN 30V 6A SOT89
- Datasheet:
- ZXTN2007ZTA
Diodes Incorporated ZXTN2007ZTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXTN2007ZTA.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Number of Pins4
- Weight51.993025mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Voltage - Rated DC30V
- Max Power Dissipation2.1W
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Current Rating6A
- Frequency140MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberZXTN2007
- Pin Count3
- JESD-30 CodeR-PSSO-F3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2.1W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product140MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current6A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1A 1V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic190mV @ 300mA, 6.5A
- Collector Emitter Breakdown Voltage30V
- Transition Frequency140MHz
- Max Breakdown Voltage30V
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)7V
- Continuous Collector Current6A
- Height1.5mm
- Length4.5mm
- Width2.48mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZXTN2007ZTA Overview
This device has a DC current gain of 100 @ 1A 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 190mV @ 300mA, 6.5A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 6A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.This device has a current rating of 6A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 140MHz.A breakdown input voltage of 30V volts can be used.A maximum collector current of 6A volts is possible.
ZXTN2007ZTA Features
the DC current gain for this device is 100 @ 1A 1V
the vce saturation(Max) is 190mV @ 300mA, 6.5A
the emitter base voltage is kept at 7V
the current rating of this device is 6A
a transition frequency of 140MHz
ZXTN2007ZTA Applications
There are a lot of Diodes Incorporated
ZXTN2007ZTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 100 @ 1A 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 190mV @ 300mA, 6.5A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 6A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.This device has a current rating of 6A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 140MHz.A breakdown input voltage of 30V volts can be used.A maximum collector current of 6A volts is possible.
ZXTN2007ZTA Features
the DC current gain for this device is 100 @ 1A 1V
the vce saturation(Max) is 190mV @ 300mA, 6.5A
the emitter base voltage is kept at 7V
the current rating of this device is 6A
a transition frequency of 140MHz
ZXTN2007ZTA Applications
There are a lot of Diodes Incorporated
ZXTN2007ZTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
ZXTN2007ZTA More Descriptions
ZXTN2007Z Series 30 V 6 A NPN SMT Silicon Medium Power Transistor - SOT-89
Trans GP BJT NPN 30V 6A 2100mW 4-Pin(3 Tab) SOT-89 T/R
Trans, Npn, 30V, 6A, 150Deg C, 2.1W Rohs Compliant: Yes |Diodes Inc. ZXTN2007ZTA
Trans GP BJT NPN 30V 6A 2100mW 4-Pin(3 Tab) SOT-89 T/R
Trans, Npn, 30V, 6A, 150Deg C, 2.1W Rohs Compliant: Yes |Diodes Inc. ZXTN2007ZTA
The three parts on the right have similar specifications to ZXTN2007ZTA.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthRadiation HardeningRoHS StatusLead FreeSubcategoryCollector Emitter Saturation VoltageREACH SVHCTerminal PositionView Compare
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ZXTN2007ZTA15 WeeksSurface MountSurface MountTO-243AA451.993025mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)30V2.1WFLAT2606A140MHz40ZXTN20073R-PSSO-F31Single2.1WCOLLECTORSWITCHING140MHzNPNNPN30V6A100 @ 1A 1V50nA ICBO190mV @ 300mA, 6.5A30V140MHz30V80V7V6A1.5mm4.5mm2.48mmNoROHS3 CompliantLead Free-----
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15 WeeksSurface MountSurface MountTO-243AA451.993025mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3noActive1 (Unlimited)3EAR99Matte Tin (Sn)100V2.1WFLAT2604.5A130MHz40-3R-PSSO-F31Single2.1WCOLLECTORSWITCHING130MHzNPNNPN100V4.5A100 @ 2A 2V50nA ICBO195mV @ 500mA, 5A100V130MHz100V200V7V4.5A1.6mm4.6mm2.6mmNoROHS3 CompliantLead FreeOther Transistors195mVNo SVHC-
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30 WeeksThrough HoleThrough HoleE-Line-33---55°C~150°C TJBulk2006e3-Active1 (Unlimited)-EAR99Matte Tin (Sn)60V1W--4.5A--ZXTN2010A---Single---130MHz-NPN60V4.5A100 @ 2A 1V50nA ICBO210mV @ 200mA, 5A60V--150V7V4.5A4.01mm4.77mm2.41mmNoROHS3 CompliantLead Free--No SVHC-
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15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealed-330mWGULL WING260-130MHz40ZXTN55513-1Single330mW--130MHzNPNNPN160V600mA80 @ 10mA 5V50nA ICBO200mV @ 5mA, 50mA160V130MHz160V180V6V-1.02mm3.04mm1.4mmNoROHS3 Compliant-Other Transistors-No SVHCDUAL
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