Diodes Incorporated ZXTN2011GTA
- Part Number:
- ZXTN2011GTA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 4538798-ZXTN2011GTA
- Description:
- TRANS NPN 100V 6A SOT223
- Datasheet:
- ZXTN2011GTA
Diodes Incorporated ZXTN2011GTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXTN2011GTA.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Voltage - Rated DC100V
- Max Power Dissipation3W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating6A
- Frequency130MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberZXTN2011
- Pin Count4
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation3W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product130MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current6A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 2A 2V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic220mV @ 500mA, 5A
- Collector Emitter Breakdown Voltage100V
- Transition Frequency130MHz
- Collector Emitter Saturation Voltage220mV
- Max Breakdown Voltage100V
- Collector Base Voltage (VCBO)200V
- Emitter Base Voltage (VEBO)7V
- Continuous Collector Current6A
- Height1.65mm
- Length6.7mm
- Width3.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZXTN2011GTA Overview
This device has a DC current gain of 100 @ 2A 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 220mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 6A is necessary for high efficiency.The base voltage of the emitter can be kept at 7V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 6A.In this part, there is a transition frequency of 130MHz.As a result, it can handle voltages as low as 100V volts.The maximum collector current is 6A volts.
ZXTN2011GTA Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 220mV
the vce saturation(Max) is 220mV @ 500mA, 5A
the emitter base voltage is kept at 7V
the current rating of this device is 6A
a transition frequency of 130MHz
ZXTN2011GTA Applications
There are a lot of Diodes Incorporated
ZXTN2011GTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 100 @ 2A 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 220mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 6A is necessary for high efficiency.The base voltage of the emitter can be kept at 7V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 6A.In this part, there is a transition frequency of 130MHz.As a result, it can handle voltages as low as 100V volts.The maximum collector current is 6A volts.
ZXTN2011GTA Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 220mV
the vce saturation(Max) is 220mV @ 500mA, 5A
the emitter base voltage is kept at 7V
the current rating of this device is 6A
a transition frequency of 130MHz
ZXTN2011GTA Applications
There are a lot of Diodes Incorporated
ZXTN2011GTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
ZXTN2011GTA More Descriptions
ZXTN2011G Series 100 V 6 A NPN SMT Silicon Medium Power Transistor - SOT-223
100V NPN Low Saturat. Transistor SOT-223 | Diodes Inc ZXTN2011GTA
Trans GP BJT NPN 100V 6A 3000mW 4-Pin(3 Tab) SOT-223 T/R
Trans, Npn, 100V, 6A, 150Deg C, 3W Rohs Compliant: Yes |Diodes Inc. ZXTN2011GTA
100V NPN Low Saturat. Transistor SOT-223 | Diodes Inc ZXTN2011GTA
Trans GP BJT NPN 100V 6A 3000mW 4-Pin(3 Tab) SOT-223 T/R
Trans, Npn, 100V, 6A, 150Deg C, 3W Rohs Compliant: Yes |Diodes Inc. ZXTN2011GTA
The three parts on the right have similar specifications to ZXTN2011GTA.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreehFE MinAdditional FeatureSubcategoryView Compare
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ZXTN2011GTA15 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)100V3WDUALGULL WING2606A130MHz40ZXTN201141Single3WCOLLECTORSWITCHING130MHzNPNNPN100V6A100 @ 2A 2V50nA ICBO220mV @ 500mA, 5A100V130MHz220mV100V200V7V6A1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free----
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15 WeeksSurface MountSurface MountTO-243AA451.993025mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)25V2.1WDUALFLAT2605.5A150MHz40ZXTN200541Single2.1WCOLLECTORSWITCHING150MHzNPNNPN25V5.5A300 @ 1A 1V20nA ICBO200mV @ 150mA, 6.5A25V150MHz200mV25V60V7V5.5A1.6mm4.6mm2.6mmNo SVHCNoROHS3 CompliantLead Free200--
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15 WeeksSurface MountSurface Mount3-XDFN3-SILICON-55°C~150°C TJTape & Reel (TR)2006e4yesActive1 (Unlimited)3EAR99Nickel/Palladium/Gold (Ni/Pd/Au)-1WBOTTOM-260-260MHz40-31Single1WCOLLECTORSWITCHING260MHzNPNNPN20V1.5A290 @ 500mA 2V100nA ICBO290mV @ 40mA, 2A20V260MHz290mV-20V7V----No SVHCNoROHS3 Compliant--HIGH RELIABILITYOther Transistors
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15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn) - annealed-330mWDUALGULL WING260-130MHz40ZXTN555131Single330mW--130MHzNPNNPN160V600mA80 @ 10mA 5V50nA ICBO200mV @ 5mA, 50mA160V130MHz-160V180V6V-1.02mm3.04mm1.4mmNo SVHCNoROHS3 Compliant---Other Transistors
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