ZXTN2011GTA

Diodes Incorporated ZXTN2011GTA

Part Number:
ZXTN2011GTA
Manufacturer:
Diodes Incorporated
Ventron No:
4538798-ZXTN2011GTA
Description:
TRANS NPN 100V 6A SOT223
ECAD Model:
Datasheet:
ZXTN2011GTA

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Specifications
Diodes Incorporated ZXTN2011GTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXTN2011GTA.
  • Factory Lead Time
    15 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Number of Pins
    4
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Voltage - Rated DC
    100V
  • Max Power Dissipation
    3W
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    6A
  • Frequency
    130MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    ZXTN2011
  • Pin Count
    4
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    3W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    130MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    100V
  • Max Collector Current
    6A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 2A 2V
  • Current - Collector Cutoff (Max)
    50nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    220mV @ 500mA, 5A
  • Collector Emitter Breakdown Voltage
    100V
  • Transition Frequency
    130MHz
  • Collector Emitter Saturation Voltage
    220mV
  • Max Breakdown Voltage
    100V
  • Collector Base Voltage (VCBO)
    200V
  • Emitter Base Voltage (VEBO)
    7V
  • Continuous Collector Current
    6A
  • Height
    1.65mm
  • Length
    6.7mm
  • Width
    3.7mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
ZXTN2011GTA Overview
This device has a DC current gain of 100 @ 2A 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 220mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 6A is necessary for high efficiency.The base voltage of the emitter can be kept at 7V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 6A.In this part, there is a transition frequency of 130MHz.As a result, it can handle voltages as low as 100V volts.The maximum collector current is 6A volts.

ZXTN2011GTA Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 220mV
the vce saturation(Max) is 220mV @ 500mA, 5A
the emitter base voltage is kept at 7V
the current rating of this device is 6A
a transition frequency of 130MHz


ZXTN2011GTA Applications
There are a lot of Diodes Incorporated
ZXTN2011GTA applications of single BJT transistors.


Inverter
Interface
Driver
Muting
ZXTN2011GTA More Descriptions
ZXTN2011G Series 100 V 6 A NPN SMT Silicon Medium Power Transistor - SOT-223
100V NPN Low Saturat. Transistor SOT-223 | Diodes Inc ZXTN2011GTA
Trans GP BJT NPN 100V 6A 3000mW 4-Pin(3 Tab) SOT-223 T/R
Trans, Npn, 100V, 6A, 150Deg C, 3W Rohs Compliant: Yes |Diodes Inc. ZXTN2011GTA
Product Comparison
The three parts on the right have similar specifications to ZXTN2011GTA.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    Continuous Collector Current
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    hFE Min
    Additional Feature
    Subcategory
    View Compare
  • ZXTN2011GTA
    ZXTN2011GTA
    15 Weeks
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    4
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    no
    Active
    1 (Unlimited)
    4
    EAR99
    Matte Tin (Sn)
    100V
    3W
    DUAL
    GULL WING
    260
    6A
    130MHz
    40
    ZXTN2011
    4
    1
    Single
    3W
    COLLECTOR
    SWITCHING
    130MHz
    NPN
    NPN
    100V
    6A
    100 @ 2A 2V
    50nA ICBO
    220mV @ 500mA, 5A
    100V
    130MHz
    220mV
    100V
    200V
    7V
    6A
    1.65mm
    6.7mm
    3.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
  • ZXTN2005ZTA
    15 Weeks
    Surface Mount
    Surface Mount
    TO-243AA
    4
    51.993025mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    no
    Active
    1 (Unlimited)
    4
    EAR99
    Matte Tin (Sn)
    25V
    2.1W
    DUAL
    FLAT
    260
    5.5A
    150MHz
    40
    ZXTN2005
    4
    1
    Single
    2.1W
    COLLECTOR
    SWITCHING
    150MHz
    NPN
    NPN
    25V
    5.5A
    300 @ 1A 1V
    20nA ICBO
    200mV @ 150mA, 6.5A
    25V
    150MHz
    200mV
    25V
    60V
    7V
    5.5A
    1.6mm
    4.6mm
    2.6mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    200
    -
    -
  • ZXTN26020DMFTA
    15 Weeks
    Surface Mount
    Surface Mount
    3-XDFN
    3
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e4
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    -
    1W
    BOTTOM
    -
    260
    -
    260MHz
    40
    -
    3
    1
    Single
    1W
    COLLECTOR
    SWITCHING
    260MHz
    NPN
    NPN
    20V
    1.5A
    290 @ 500mA 2V
    100nA ICBO
    290mV @ 40mA, 2A
    20V
    260MHz
    290mV
    -
    20V
    7V
    -
    -
    -
    -
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    HIGH RELIABILITY
    Other Transistors
  • ZXTN5551FLTA
    15 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2007
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn) - annealed
    -
    330mW
    DUAL
    GULL WING
    260
    -
    130MHz
    40
    ZXTN5551
    3
    1
    Single
    330mW
    -
    -
    130MHz
    NPN
    NPN
    160V
    600mA
    80 @ 10mA 5V
    50nA ICBO
    200mV @ 5mA, 50mA
    160V
    130MHz
    -
    160V
    180V
    6V
    -
    1.02mm
    3.04mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    Other Transistors
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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