Diodes Incorporated ZXTN2011ZTA

ZXTN2011ZTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 2A 2V.The collector emitter saturation voltage is 195mV, which allows for maximum design flexibility.When VCE saturation is 195mV @ 500mA, 5A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 4.5A for high efficiency.Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 4.5A.In the part, the transition frequency is 130MHz.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 4.5A volts can be achieved.

ZXTN2011ZTA Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 195mV
the vce saturation(Max) is 195mV @ 500mA, 5A
the emitter base voltage is kept at 7V
the current rating of this device is 4.5A
a transition frequency of 130MHz


ZXTN2011ZTA Applications
There are a lot of Diodes Incorporated
ZXTN2011ZTA applications of single BJT transistors.


Inverter
Interface
Driver
Muting