Rohm Semiconductor 2SCR346PT100Q
- Part Number:
- 2SCR346PT100Q
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 4538898-2SCR346PT100Q
- Description:
- NPN 100MA 400V MIDDLE POWER TRAN
- Datasheet:
- 2SCR346PT100Q
Rohm Semiconductor 2SCR346PT100Q technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SCR346PT100Q.
- Factory Lead Time13 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Max Power Dissipation500mW
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Power - Max500mW
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)300mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce82 @ 10mA 10V
- Current - Collector Cutoff (Max)10μA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 2mA, 20mA
- Collector Emitter Breakdown Voltage400V
- Max Breakdown Voltage400V
- RoHS StatusROHS3 Compliant
2SCR346PT100Q Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 82 @ 10mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 2mA, 20mA.Single BJT transistor can take a breakdown input voltage of 400V volts.During maximum operation, collector current can be as low as 100mA volts.
2SCR346PT100Q Features
the DC current gain for this device is 82 @ 10mA 10V
the vce saturation(Max) is 300mV @ 2mA, 20mA
2SCR346PT100Q Applications
There are a lot of ROHM Semiconductor
2SCR346PT100Q applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 82 @ 10mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 2mA, 20mA.Single BJT transistor can take a breakdown input voltage of 400V volts.During maximum operation, collector current can be as low as 100mA volts.
2SCR346PT100Q Features
the DC current gain for this device is 82 @ 10mA 10V
the vce saturation(Max) is 300mV @ 2mA, 20mA
2SCR346PT100Q Applications
There are a lot of ROHM Semiconductor
2SCR346PT100Q applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SCR346PT100Q More Descriptions
Trans GP BJT NPN 400V 0.1A 3-Pin SOT-89 T/R
TRANS NPN 400V 0.1A MPT3
OEMs, CMs ONLY (NO BROKERS)
IC REG LINEAR 8V 500MA DPAK
TRANS DIGITAL NPN
TRANS NPN 400V 0.1A MPT3
OEMs, CMs ONLY (NO BROKERS)
IC REG LINEAR 8V 500MA DPAK
TRANS DIGITAL NPN
The three parts on the right have similar specifications to 2SCR346PT100Q.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)ECCN CodeMax Power DissipationPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Power - MaxTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageMax Breakdown VoltageRoHS StatusNumber of PinsTransistor Element MaterialPublishedJESD-609 CodePbfree CodeNumber of TerminationsSubcategoryTerminal PositionTerminal FormPin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationTransistor ApplicationPolarity/Channel TypeTransition FrequencyFrequency - TransitionLead FreeTerminal FinishReach Compliance CodeElement ConfigurationGain Bandwidth ProductCurrent - Collector (Ic) (Max)Collector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContact PlatingContinuous Collector CurrentView Compare
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2SCR346PT100Q13 WeeksSurface MountSurface MountTO-243AA150°C TJTape & Reel (TR)Active1 (Unlimited)EAR99500mWNOT SPECIFIEDNOT SPECIFIED500mWNPN300mV100mA82 @ 10mA 10V10μA ICBO300mV @ 2mA, 20mA400V400VROHS3 Compliant-------------------------------
-
20 WeeksSurface MountSurface MountSC-96150°C TJCut Tape (CT)Active1 (Unlimited)EAR991WNOT SPECIFIEDNOT SPECIFIED1WNPN350mV3A180 @ 100mA 3V1μA ICBO350mV @ 100mA, 2A50V50VROHS3 Compliant96SILICON2013e1yes3Other TransistorsDUALGULL WING3R-PDSO-G3Not Qualified1SINGLESWITCHINGNPN300MHz300MHzLead Free-----------
-
52 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63150°C TJTape & Reel (TR)Not For New Designs1 (Unlimited)EAR9910WNOT SPECIFIEDNOT SPECIFIED-NPN350mV4A180 @ 100mA 3V1μA ICBO350mV @ 100mA, 2A50V-ROHS3 Compliant3SILICON2013e2yes2Other Transistors-GULL WING3R-PSSO-G2Not Qualified1-SWITCHINGNPN300MHz--Tin/Copper (Sn98Cu2)not_compliantSingle300MHz4A130mV50V6V180--
-
13 WeeksSurface MountSurface MountSC-89, SOT-490150°C TJTape & Reel (TR)Active1 (Unlimited)EAR99150mW26010-NPN20V200mA120 @ 1mA 2V100nA ICBO300mV @ 10mA, 100mA20V20VROHS3 Compliant-SILICON2015e1yes3Other TransistorsDUALFLAT3R-PDSO-F3Not Qualified1-SWITCHINGNPN400MHz-Lead Free--Single400MHz-120mV20V5V120Tin200mA
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