Diodes Incorporated ZVN3310FTC
- Part Number:
- ZVN3310FTC
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2851720-ZVN3310FTC
- Description:
- MOSFET N-CH 100V 100MA SOT23-3
- Datasheet:
- ZVN3310FTC
Diodes Incorporated ZVN3310FTC technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVN3310FTC.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- SubcategoryFET General Purpose Power
- Voltage - Rated DC100V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating200mA
- Time@Peak Reflow Temperature-Max (s)40
- JESD-30 CodeR-PDSO-G3
- Qualification StatusNot Qualified
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max330mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation330mW
- Turn On Delay Time3 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs10 Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id2.4V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds40pF @ 25V
- Current - Continuous Drain (Id) @ 25°C100mA Ta
- Rise Time5ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)5 ns
- Turn-Off Delay Time4 ns
- Continuous Drain Current (ID)100mA
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage100V
- Feedback Cap-Max (Crss)5 pF
- Height1.02mm
- Length3.04mm
- Width1.4mm
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
ZVN3310FTC Overview
The maximum input capacitance of this device is 40pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 100mA.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 4 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 3 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
ZVN3310FTC Features
a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 4 ns
ZVN3310FTC Applications
There are a lot of Diodes Incorporated
ZVN3310FTC applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 40pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 100mA.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 4 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 3 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
ZVN3310FTC Features
a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 4 ns
ZVN3310FTC Applications
There are a lot of Diodes Incorporated
ZVN3310FTC applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
ZVN3310FTC More Descriptions
MOSFET N-CH 100V 100MA SOT23-3
Compliant Surface Mount 1.4 mm 1.02 mm 3.04 mm 7.994566 mg 5 ns Lead Free
MOSFETs N-Chnl 100V
Compliant Surface Mount 1.4 mm 1.02 mm 3.04 mm 7.994566 mg 5 ns Lead Free
MOSFETs N-Chnl 100V
The three parts on the right have similar specifications to ZVN3310FTC.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageFeedback Cap-Max (Crss)HeightLengthWidthRoHS StatusLead FreeNumber of PinsMax Power DissipationPin CountConfigurationTransistor ApplicationDrain to Source Voltage (Vdss)Polarity/Channel TypeInput CapacitanceFET TechnologyDrain to Source ResistanceRds On MaxRadiation HardeningPbfree CodeHTS CodeOperating Temperature (Max)Drain Current-Max (Abs) (ID)Factory Lead TimeContact PlatingResistanceThreshold VoltagePulsed Drain Current-Max (IDM)REACH SVHCView Compare
-
ZVN3310FTCSurface MountSurface MountTO-236-3, SC-59, SOT-23-37.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3Obsolete1 (Unlimited)3EAR99MATTE TINFET General Purpose Power100VMOSFET (Metal Oxide)DUALGULL WING260200mA40R-PDSO-G3Not Qualified11330mW TaSingleENHANCEMENT MODE330mW3 nsN-Channel10 Ω @ 500mA, 10V2.4V @ 1mA40pF @ 25V100mA Ta5ns10V±20V5 ns4 ns100mA20V100V5 pF1.02mm3.04mm1.4mmRoHS CompliantLead Free-----------------------
-
Through Hole-TO-226-31.437803gSILICON-Tape & Reel (TR)2009e3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)-200V-SINGLEWIRE260100mA40--11--ENHANCEMENT MODE330mW-----------100mA20V200V----ROHS3 CompliantLead Free3625mW3SINGLESWITCHING200VN-CHANNEL45pFMETAL-OXIDE SEMICONDUCTOR25Ohm25 ΩNo----------
-
Through Hole-SOT-23-SILICON-Bulk2006e3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)FET General Purpose Power200V-SINGLEWIRE260100mA40R-PSIP-W3Not Qualified1---ENHANCEMENT MODE330mW-----------100mA20V200V----ROHS3 CompliantLead Free-625mW3SINGLESWITCHING200VN-CHANNEL45pFMETAL-OXIDE SEMICONDUCTOR25Ohm25 Ω-yes8541.29.00.95200°C0.1A------
-
Surface MountSurface MountTO-236-3, SC-59, SOT-23-37.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2001e3Active1 (Unlimited)3EAR99-FET General Purpose Power200VMOSFET (Metal Oxide)DUALGULL WING26060mA40--11330mW TaSingleENHANCEMENT MODE330mW5 nsN-Channel25 Ω @ 100mA, 10V3V @ 1mA45pF @ 25V60mA Ta7ns10V±20V7 ns6 ns60mA20V200V5 pF1.02mm3.04mm1.4mmROHS3 CompliantLead Free3----------Noyes--0.06A17 WeeksTin25Ohm1V1ANo SVHC
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
08 October 2023
IRFP260N Power Mosfet Transistor: Symbol, Features and Working Principle
Ⅰ. IRFP260N transistor descriptionⅡ. Symbol, footprint and pin connection of IRFP260NⅢ. Technical parametersⅣ. Features of IRFP260NⅤ. How does IRFP260N work and how does it drive IRFP260N?Ⅵ. Absolute maximum... -
09 October 2023
TIP117 Darlington Power Transistor Pinout, Equivalent, Features and Uses
Ⅰ. Overview of TIP117Ⅱ. The symbol, footprint and pinout of TIP117Ⅲ. Technical parameters of TIP117Ⅳ. What are the features of TIP117?Ⅴ. Package and packaging of TIP117Ⅵ. What are... -
09 October 2023
Lithium CR2450 Battery Symbol, Equivalent, Specifications and Uses
Ⅰ. What is CR2450 battery?Ⅱ. CR2450 symbol and footprintⅢ. Specifications of CR2450 batteryⅣ. What are the features of CR2450 battery?Ⅴ. What are the uses of CR2450 battery?Ⅵ. What... -
10 October 2023
Get to know the Lithium Coin Cell CR2354
Ⅰ. What is a button battery?Ⅱ. What is CR2354 battery?Ⅲ. Dimensions of CR2354 batteryⅣ. Specifications of CR2354 batteryⅤ. Features of CR2354 batteryⅥ. What are the uses of CR2354...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.