Diodes Incorporated ZVN3306A
- Part Number:
- ZVN3306A
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2848713-ZVN3306A
- Description:
- MOSFET N-CH 60V 270MA TO92-3
- Datasheet:
- ZVN3306A
Diodes Incorporated ZVN3306A technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVN3306A.
- Factory Lead Time17 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Number of Pins3
- Weight453.59237mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance5Ohm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- Voltage - Rated DC60V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Peak Reflow Temperature (Cel)260
- Current Rating270mA
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max625mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation625mW
- Turn On Delay Time5 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs5 Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id2.4V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds35pF @ 18V
- Current - Continuous Drain (Id) @ 25°C270mA Ta
- Rise Time7ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)7 ns
- Turn-Off Delay Time6 ns
- Continuous Drain Current (ID)270mA
- Threshold Voltage2.4V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)0.27A
- Drain to Source Breakdown Voltage60V
- Feedback Cap-Max (Crss)8 pF
- Height4.01mm
- Length4.77mm
- Width2.41mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZVN3306A Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 35pF @ 18V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.There is no drain current on this device since the maximum continuous current it can conduct is 0.27A.As a result of its turn-off delay time, which is 6 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 5 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2.4V.In addition to reducing power consumption, this device uses drive voltage (10V).
ZVN3306A Features
a continuous drain current (ID) of 270mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 6 ns
a threshold voltage of 2.4V
ZVN3306A Applications
There are a lot of Diodes Incorporated
ZVN3306A applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 35pF @ 18V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.There is no drain current on this device since the maximum continuous current it can conduct is 0.27A.As a result of its turn-off delay time, which is 6 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 5 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2.4V.In addition to reducing power consumption, this device uses drive voltage (10V).
ZVN3306A Features
a continuous drain current (ID) of 270mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 6 ns
a threshold voltage of 2.4V
ZVN3306A Applications
There are a lot of Diodes Incorporated
ZVN3306A applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
ZVN3306A More Descriptions
N-Channel 60 V 5 Ohm Enhancement Mode Vertical DMOS FET- TO-92
N CHANNEL MOSFET, 60V, 270mA, TO-92
Trans MOSFET N-CH 60V 0.27A Automotive 3-Pin E-Line
Mosfet Bvdss: 41V~60V Ep3sc Bulk 4K Rohs Compliant: Yes
MOSFET N-Channel 60V 0.27A E-Line | Diodes Inc ZVN3306A
Small Signal Field-Effect Transistor, 0.27A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGSDiodes Inc SCT
French Electronic Distributor since 1988
Small Signal Field-Effect Transistors
MOSFET, N, E-LINE; Transistor Polarity:N Channel; Continuous Drain Current Id:270mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.4V; Power Dissipation Pd:625mW; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:270mA; Current Temperature:25°C; Device Marking:ZVN3306A; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:625mW; Power Dissipation Pd:625mW; Power Dissipation Ptot Max:625mW; Pulse Current Idm:3A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:2.4V; Voltage Vgs Rds on Measurement:10V
N CHANNEL MOSFET, 60V, 270mA, TO-92
Trans MOSFET N-CH 60V 0.27A Automotive 3-Pin E-Line
Mosfet Bvdss: 41V~60V Ep3sc Bulk 4K Rohs Compliant: Yes
MOSFET N-Channel 60V 0.27A E-Line | Diodes Inc ZVN3306A
Small Signal Field-Effect Transistor, 0.27A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGSDiodes Inc SCT
French Electronic Distributor since 1988
Small Signal Field-Effect Transistors
MOSFET, N, E-LINE; Transistor Polarity:N Channel; Continuous Drain Current Id:270mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.4V; Power Dissipation Pd:625mW; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:270mA; Current Temperature:25°C; Device Marking:ZVN3306A; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:625mW; Power Dissipation Pd:625mW; Power Dissipation Ptot Max:625mW; Pulse Current Idm:3A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:2.4V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to ZVN3306A.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageFeedback Cap-Max (Crss)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTransistor ApplicationMax Power DissipationConfigurationDrain to Source Voltage (Vdss)Polarity/Channel TypeInput CapacitanceFET TechnologyDrain to Source ResistanceRds On MaxHTS CodeJESD-30 CodeQualification StatusOperating Temperature (Max)View Compare
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ZVN3306A17 WeeksThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)3453.59237mgSILICON-55°C~150°C TJBulk2006e3yesActive1 (Unlimited)3EAR995OhmMatte Tin (Sn)FET General Purpose Power60VMOSFET (Metal Oxide)BOTTOMWIRE260270mA40311625mW TaSingleENHANCEMENT MODE625mW5 nsN-Channel5 Ω @ 500mA, 10V2.4V @ 1mA35pF @ 18V270mA Ta7ns10V±20V7 ns6 ns270mA2.4V20V0.27A60V8 pF4.01mm4.77mm2.41mmNo SVHCNoROHS3 CompliantLead Free--------------
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17 WeeksThrough HoleThrough HoleE-Line-33453.59237mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3yesActive1 (Unlimited)3EAR995OhmMatte Tin (Sn)-60VMOSFET (Metal Oxide)-WIRE260270mA40311625mW TaSingleENHANCEMENT MODE625mW5 nsN-Channel5 Ω @ 500mA, 10V2.4V @ 1mA35pF @ 18V270mA Ta7ns10V±20V7 ns6 ns270mA-20V0.27A60V-4.01mm4.77mm2.41mmNo SVHCNoROHS3 CompliantLead FreeSWITCHING------------
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-Through Hole-TO-226-331.437803gSILICON-Tape & Reel (TR)2009e3-Obsolete1 (Unlimited)3EAR99-Matte Tin (Sn)-200V-SINGLEWIRE260100mA40311--ENHANCEMENT MODE330mW-----------100mA-20V-200V-----NoROHS3 CompliantLead FreeSWITCHING625mWSINGLE200VN-CHANNEL45pFMETAL-OXIDE SEMICONDUCTOR25Ohm25 Ω----
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-Through Hole-SOT-23--SILICON-Bulk2006e3yesObsolete1 (Unlimited)3EAR99-Matte Tin (Sn)FET General Purpose Power200V-SINGLEWIRE260100mA4031---ENHANCEMENT MODE330mW-----------100mA-20V0.1A200V------ROHS3 CompliantLead FreeSWITCHING625mWSINGLE200VN-CHANNEL45pFMETAL-OXIDE SEMICONDUCTOR25Ohm25 Ω8541.29.00.95R-PSIP-W3Not Qualified200°C
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