ZVN3306A

Diodes Incorporated ZVN3306A

Part Number:
ZVN3306A
Manufacturer:
Diodes Incorporated
Ventron No:
2848713-ZVN3306A
Description:
MOSFET N-CH 60V 270MA TO92-3
ECAD Model:
Datasheet:
ZVN3306A

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Specifications
Diodes Incorporated ZVN3306A technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVN3306A.
  • Factory Lead Time
    17 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA)
  • Number of Pins
    3
  • Weight
    453.59237mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Bulk
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    5Ohm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    60V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    270mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    625mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    625mW
  • Turn On Delay Time
    5 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    5 Ω @ 500mA, 10V
  • Vgs(th) (Max) @ Id
    2.4V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    35pF @ 18V
  • Current - Continuous Drain (Id) @ 25°C
    270mA Ta
  • Rise Time
    7ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    7 ns
  • Turn-Off Delay Time
    6 ns
  • Continuous Drain Current (ID)
    270mA
  • Threshold Voltage
    2.4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    0.27A
  • Drain to Source Breakdown Voltage
    60V
  • Feedback Cap-Max (Crss)
    8 pF
  • Height
    4.01mm
  • Length
    4.77mm
  • Width
    2.41mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
ZVN3306A Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 35pF @ 18V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.There is no drain current on this device since the maximum continuous current it can conduct is 0.27A.As a result of its turn-off delay time, which is 6 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 5 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2.4V.In addition to reducing power consumption, this device uses drive voltage (10V).

ZVN3306A Features
a continuous drain current (ID) of 270mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 6 ns
a threshold voltage of 2.4V


ZVN3306A Applications
There are a lot of Diodes Incorporated
ZVN3306A applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
ZVN3306A More Descriptions
N-Channel 60 V 5 Ohm Enhancement Mode Vertical DMOS FET- TO-92
N CHANNEL MOSFET, 60V, 270mA, TO-92
Trans MOSFET N-CH 60V 0.27A Automotive 3-Pin E-Line
Mosfet Bvdss: 41V~60V Ep3sc Bulk 4K Rohs Compliant: Yes
MOSFET N-Channel 60V 0.27A E-Line | Diodes Inc ZVN3306A
Small Signal Field-Effect Transistor, 0.27A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGSDiodes Inc SCT
French Electronic Distributor since 1988
Small Signal Field-Effect Transistors
MOSFET, N, E-LINE; Transistor Polarity:N Channel; Continuous Drain Current Id:270mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.4V; Power Dissipation Pd:625mW; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:270mA; Current Temperature:25°C; Device Marking:ZVN3306A; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:625mW; Power Dissipation Pd:625mW; Power Dissipation Ptot Max:625mW; Pulse Current Idm:3A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:2.4V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to ZVN3306A.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Feedback Cap-Max (Crss)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Transistor Application
    Max Power Dissipation
    Configuration
    Drain to Source Voltage (Vdss)
    Polarity/Channel Type
    Input Capacitance
    FET Technology
    Drain to Source Resistance
    Rds On Max
    HTS Code
    JESD-30 Code
    Qualification Status
    Operating Temperature (Max)
    View Compare
  • ZVN3306A
    ZVN3306A
    17 Weeks
    Through Hole
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    3
    453.59237mg
    SILICON
    -55°C~150°C TJ
    Bulk
    2006
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    5Ohm
    Matte Tin (Sn)
    FET General Purpose Power
    60V
    MOSFET (Metal Oxide)
    BOTTOM
    WIRE
    260
    270mA
    40
    3
    1
    1
    625mW Ta
    Single
    ENHANCEMENT MODE
    625mW
    5 ns
    N-Channel
    5 Ω @ 500mA, 10V
    2.4V @ 1mA
    35pF @ 18V
    270mA Ta
    7ns
    10V
    ±20V
    7 ns
    6 ns
    270mA
    2.4V
    20V
    0.27A
    60V
    8 pF
    4.01mm
    4.77mm
    2.41mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • ZVN3306ASTZ
    17 Weeks
    Through Hole
    Through Hole
    E-Line-3
    3
    453.59237mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    5Ohm
    Matte Tin (Sn)
    -
    60V
    MOSFET (Metal Oxide)
    -
    WIRE
    260
    270mA
    40
    3
    1
    1
    625mW Ta
    Single
    ENHANCEMENT MODE
    625mW
    5 ns
    N-Channel
    5 Ω @ 500mA, 10V
    2.4V @ 1mA
    35pF @ 18V
    270mA Ta
    7ns
    10V
    ±20V
    7 ns
    6 ns
    270mA
    -
    20V
    0.27A
    60V
    -
    4.01mm
    4.77mm
    2.41mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    SWITCHING
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • ZVN3320ASTOA
    -
    Through Hole
    -
    TO-226-3
    3
    1.437803g
    SILICON
    -
    Tape & Reel (TR)
    2009
    e3
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    Matte Tin (Sn)
    -
    200V
    -
    SINGLE
    WIRE
    260
    100mA
    40
    3
    1
    1
    -
    -
    ENHANCEMENT MODE
    330mW
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    100mA
    -
    20V
    -
    200V
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    SWITCHING
    625mW
    SINGLE
    200V
    N-CHANNEL
    45pF
    METAL-OXIDE SEMICONDUCTOR
    25Ohm
    25 Ω
    -
    -
    -
    -
  • ZVN3320A
    -
    Through Hole
    -
    SOT-23
    -
    -
    SILICON
    -
    Bulk
    2006
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    Matte Tin (Sn)
    FET General Purpose Power
    200V
    -
    SINGLE
    WIRE
    260
    100mA
    40
    3
    1
    -
    -
    -
    ENHANCEMENT MODE
    330mW
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    100mA
    -
    20V
    0.1A
    200V
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    SWITCHING
    625mW
    SINGLE
    200V
    N-CHANNEL
    45pF
    METAL-OXIDE SEMICONDUCTOR
    25Ohm
    25 Ω
    8541.29.00.95
    R-PSIP-W3
    Not Qualified
    200°C
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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