ZVN3306ASTOA

Diodes Incorporated ZVN3306ASTOA

Part Number:
ZVN3306ASTOA
Manufacturer:
Diodes Incorporated
Ventron No:
2488753-ZVN3306ASTOA
Description:
MOSFET N-CH 60V 0.27A TO92-3
ECAD Model:
Datasheet:
ZVN3306ASTOA

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Specifications
Diodes Incorporated ZVN3306ASTOA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVN3306ASTOA.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    E-Line-3
  • Weight
    453.59237mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2012
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    MATTE TIN
  • Voltage - Rated DC
    60V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    WIRE
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    unknown
  • Current Rating
    270mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • JESD-30 Code
    R-PSIP-W3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    625mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    625mW
  • Turn On Delay Time
    5 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    5 Ω @ 500mA, 10V
  • Vgs(th) (Max) @ Id
    2.4V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    35pF @ 18V
  • Current - Continuous Drain (Id) @ 25°C
    270mA Ta
  • Rise Time
    7ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    7 ns
  • Turn-Off Delay Time
    6 ns
  • Continuous Drain Current (ID)
    270mA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    0.27A
  • Drain-source On Resistance-Max
    5Ohm
  • Drain to Source Breakdown Voltage
    60V
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
ZVN3306ASTOA Overview
The maximum input capacitance of this device is 35pF @ 18V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 270mA.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.As shown in the table below, the drain current of this device is 0.27A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 6 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 5 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.

ZVN3306ASTOA Features
a continuous drain current (ID) of 270mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 6 ns


ZVN3306ASTOA Applications
There are a lot of Diodes Incorporated
ZVN3306ASTOA applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
ZVN3306ASTOA More Descriptions
Trans MOSFET N-CH 60V 0.27A 3-Pin E-Line
Small Signal Field-Effect Transistor, 0.27A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
French Electronic Distributor since 1988
Product Comparison
The three parts on the right have similar specifications to ZVN3306ASTOA.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Voltage - Rated DC
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    RoHS Status
    Lead Free
    Number of Pins
    Max Power Dissipation
    Terminal Position
    Configuration
    Drain to Source Voltage (Vdss)
    Polarity/Channel Type
    Input Capacitance
    FET Technology
    Drain to Source Resistance
    Rds On Max
    Radiation Hardening
    Pbfree Code
    HTS Code
    Subcategory
    Operating Temperature (Max)
    Factory Lead Time
    Contact Plating
    Resistance
    Threshold Voltage
    Pulsed Drain Current-Max (IDM)
    Feedback Cap-Max (Crss)
    Height
    Length
    Width
    REACH SVHC
    View Compare
  • ZVN3306ASTOA
    ZVN3306ASTOA
    Through Hole
    Through Hole
    E-Line-3
    453.59237mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    MATTE TIN
    60V
    MOSFET (Metal Oxide)
    WIRE
    260
    unknown
    270mA
    40
    3
    R-PSIP-W3
    Not Qualified
    1
    1
    625mW Ta
    Single
    ENHANCEMENT MODE
    625mW
    5 ns
    N-Channel
    SWITCHING
    5 Ω @ 500mA, 10V
    2.4V @ 1mA
    35pF @ 18V
    270mA Ta
    7ns
    10V
    ±20V
    7 ns
    6 ns
    270mA
    20V
    0.27A
    5Ohm
    60V
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • ZVN3320ASTOA
    Through Hole
    -
    TO-226-3
    1.437803g
    SILICON
    -
    Tape & Reel (TR)
    2009
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    200V
    -
    WIRE
    260
    -
    100mA
    40
    3
    -
    -
    1
    1
    -
    -
    ENHANCEMENT MODE
    330mW
    -
    -
    SWITCHING
    -
    -
    -
    -
    -
    -
    -
    -
    -
    100mA
    20V
    -
    -
    200V
    ROHS3 Compliant
    Lead Free
    3
    625mW
    SINGLE
    SINGLE
    200V
    N-CHANNEL
    45pF
    METAL-OXIDE SEMICONDUCTOR
    25Ohm
    25 Ω
    No
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • ZVN3320A
    Through Hole
    -
    SOT-23
    -
    SILICON
    -
    Bulk
    2006
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    200V
    -
    WIRE
    260
    -
    100mA
    40
    3
    R-PSIP-W3
    Not Qualified
    1
    -
    -
    -
    ENHANCEMENT MODE
    330mW
    -
    -
    SWITCHING
    -
    -
    -
    -
    -
    -
    -
    -
    -
    100mA
    20V
    0.1A
    -
    200V
    ROHS3 Compliant
    Lead Free
    -
    625mW
    SINGLE
    SINGLE
    200V
    N-CHANNEL
    45pF
    METAL-OXIDE SEMICONDUCTOR
    25Ohm
    25 Ω
    -
    yes
    8541.29.00.95
    FET General Purpose Power
    200°C
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • ZVN3320FTA
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2001
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    -
    200V
    MOSFET (Metal Oxide)
    GULL WING
    260
    -
    60mA
    40
    -
    -
    -
    1
    1
    330mW Ta
    Single
    ENHANCEMENT MODE
    330mW
    5 ns
    N-Channel
    -
    25 Ω @ 100mA, 10V
    3V @ 1mA
    45pF @ 25V
    60mA Ta
    7ns
    10V
    ±20V
    7 ns
    6 ns
    60mA
    20V
    0.06A
    -
    200V
    ROHS3 Compliant
    Lead Free
    3
    -
    DUAL
    -
    -
    -
    -
    -
    -
    -
    No
    yes
    -
    FET General Purpose Power
    -
    17 Weeks
    Tin
    25Ohm
    1V
    1A
    5 pF
    1.02mm
    3.04mm
    1.4mm
    No SVHC
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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