Diodes Incorporated ZVN3306ASTOA
- Part Number:
- ZVN3306ASTOA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2488753-ZVN3306ASTOA
- Description:
- MOSFET N-CH 60V 0.27A TO92-3
- Datasheet:
- ZVN3306ASTOA
Diodes Incorporated ZVN3306ASTOA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVN3306ASTOA.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseE-Line-3
- Weight453.59237mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- Voltage - Rated DC60V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormWIRE
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codeunknown
- Current Rating270mA
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- JESD-30 CodeR-PSIP-W3
- Qualification StatusNot Qualified
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max625mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation625mW
- Turn On Delay Time5 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs5 Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id2.4V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds35pF @ 18V
- Current - Continuous Drain (Id) @ 25°C270mA Ta
- Rise Time7ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)7 ns
- Turn-Off Delay Time6 ns
- Continuous Drain Current (ID)270mA
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)0.27A
- Drain-source On Resistance-Max5Ohm
- Drain to Source Breakdown Voltage60V
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
ZVN3306ASTOA Overview
The maximum input capacitance of this device is 35pF @ 18V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 270mA.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.As shown in the table below, the drain current of this device is 0.27A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 6 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 5 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
ZVN3306ASTOA Features
a continuous drain current (ID) of 270mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 6 ns
ZVN3306ASTOA Applications
There are a lot of Diodes Incorporated
ZVN3306ASTOA applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 35pF @ 18V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 270mA.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.As shown in the table below, the drain current of this device is 0.27A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 6 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 5 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
ZVN3306ASTOA Features
a continuous drain current (ID) of 270mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 6 ns
ZVN3306ASTOA Applications
There are a lot of Diodes Incorporated
ZVN3306ASTOA applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
ZVN3306ASTOA More Descriptions
Trans MOSFET N-CH 60V 0.27A 3-Pin E-Line
Small Signal Field-Effect Transistor, 0.27A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
French Electronic Distributor since 1988
Small Signal Field-Effect Transistor, 0.27A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
French Electronic Distributor since 1988
The three parts on the right have similar specifications to ZVN3306ASTOA.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishVoltage - Rated DCTechnologyTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageRoHS StatusLead FreeNumber of PinsMax Power DissipationTerminal PositionConfigurationDrain to Source Voltage (Vdss)Polarity/Channel TypeInput CapacitanceFET TechnologyDrain to Source ResistanceRds On MaxRadiation HardeningPbfree CodeHTS CodeSubcategoryOperating Temperature (Max)Factory Lead TimeContact PlatingResistanceThreshold VoltagePulsed Drain Current-Max (IDM)Feedback Cap-Max (Crss)HeightLengthWidthREACH SVHCView Compare
-
ZVN3306ASTOAThrough HoleThrough HoleE-Line-3453.59237mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3Obsolete1 (Unlimited)3EAR99MATTE TIN60VMOSFET (Metal Oxide)WIRE260unknown270mA403R-PSIP-W3Not Qualified11625mW TaSingleENHANCEMENT MODE625mW5 nsN-ChannelSWITCHING5 Ω @ 500mA, 10V2.4V @ 1mA35pF @ 18V270mA Ta7ns10V±20V7 ns6 ns270mA20V0.27A5Ohm60VRoHS CompliantLead Free--------------------------
-
Through Hole-TO-226-31.437803gSILICON-Tape & Reel (TR)2009e3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)200V-WIRE260-100mA403--11--ENHANCEMENT MODE330mW--SWITCHING---------100mA20V--200VROHS3 CompliantLead Free3625mWSINGLESINGLE200VN-CHANNEL45pFMETAL-OXIDE SEMICONDUCTOR25Ohm25 ΩNo--------------
-
Through Hole-SOT-23-SILICON-Bulk2006e3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)200V-WIRE260-100mA403R-PSIP-W3Not Qualified1---ENHANCEMENT MODE330mW--SWITCHING---------100mA20V0.1A-200VROHS3 CompliantLead Free-625mWSINGLESINGLE200VN-CHANNEL45pFMETAL-OXIDE SEMICONDUCTOR25Ohm25 Ω-yes8541.29.00.95FET General Purpose Power200°C----------
-
Surface MountSurface MountTO-236-3, SC-59, SOT-23-37.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2001e3Active1 (Unlimited)3EAR99-200VMOSFET (Metal Oxide)GULL WING260-60mA40---11330mW TaSingleENHANCEMENT MODE330mW5 nsN-Channel-25 Ω @ 100mA, 10V3V @ 1mA45pF @ 25V60mA Ta7ns10V±20V7 ns6 ns60mA20V0.06A-200VROHS3 CompliantLead Free3-DUAL-------Noyes-FET General Purpose Power-17 WeeksTin25Ohm1V1A5 pF1.02mm3.04mm1.4mmNo SVHC
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
18 February 2024
L6599DTR Technical Parameters, Working Principle, Characteristics and L6599DTR vs L6599D
Ⅰ. Introduction to L6599DTRⅡ. Technical parameters of L6599DTRⅢ. Working principle of L6599DTRⅣ. Block diagram of L6599DTRⅤ. What are the characteristics of L6599DTR?Ⅵ. How does the output current protection... -
18 February 2024
LNK364PN Manufacturer, Package, Applications and Specifications
Ⅰ. What is LNK364PN?Ⅱ. Manufacturer of LNK364PNⅢ. Package of LNK364PNⅣ. How to measure the quality of LNK364PN?Ⅴ. Pins and functions of LNK364PNⅥ. Applications of LNK364PNⅦ. Specifications of LNK364PNⅧ.... -
19 February 2024
SG3525AN Controller: Specifications, Application Circuit and Other Details
Ⅰ. Overview of SG3525ANⅡ. Specifications of SG3525ANⅢ. Application circuit of SG3525ANⅣ. How to evaluate the efficiency of SG3525AN controller?Ⅴ. Recommended operating conditions for SG3525ANⅥ. What are the advantages... -
19 February 2024
SS14 Schottky Power Diode Function, Applications, Working Principle and Features
Ⅰ. What is a Schottky diode?Ⅱ. SS14 overviewⅢ. Common brands of SS14 diodeⅣ. Typical performance characteristics of SS14 diodeⅤ. The function of SS14 diodeⅥ. What are the applications...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.